Abstract: A magnetoresistive (MR) read transducer assembly having passive end regions separated by a central active region, and a method of fabricating it. Layers of a first biasing material and a nonmagnetic decoupling spacer material are deposited on a substrate, then covered by a mask only in the central region. By etching or ion milling, those parts of the layers not covered by the mask are removed to define a transverse biasing means in the central region and define the passive end regions. With the same mask remaining in place, a conductive material and exchange layer comprising a second biasing material are deposited over all regions. The mask is removed to define and provide conductor leads and longitudinal biasing means only in the end regions. MR material is thereafter deposited as a continuous thin film in direct contact with the central region containing the transverse biasing means and in direct contact with the end regions containing the longitudinal biasing means.

Abstract: A nonvolatile magnetoresistive (MR) storage device comprising a plurality of MR storage elements, each comprising a substrate and a multilayered structure including two thin film layers of ferromagnetic material separated by a thin layer of nonmagnetic metallic conducting material. The magnetization easy axis of both ferromagnetic layers in each storage element is oriented substantially lengthwise of the storage elements and substantially parallel to the direction of an applied sense current. The magnetization direction of one of the ferromagnetic layers is fixed in a direction substantially lengthwise of the storage elements, and the magnetization direction of the other layer is free to switch between two digital states in which the magnetization is substantially parallel or substantially antiparallel to the magnetization direction in the one layer.