Patents by Inventor Kenneth Vampola
Kenneth Vampola has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9997674Abstract: Embodiments of the invention include a semiconductor light emitting diode attached to a substrate. A first region of wavelength converting material is disposed on the substrate. The wavelength converting material is configured to absorb light emitted by the semiconductor light emitting diode and emit light at a different wavelength. In the first region, the wavelength converting material coats an entire surface of the substrate. The substrate is disposed proximate a bottom surface of an optical cavity. A second region of wavelength converting material is disposed proximate a top surface of the optical cavity.Type: GrantFiled: March 30, 2013Date of Patent: June 12, 2018Assignee: LUMILEDS LLCInventors: Kenneth Vampola, Han Ho Choi, Mark Melvin Butterworth
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Patent number: 9974135Abstract: An apparatus is disclosed that includes a segmented light-emitting diode (LED) chip having a plurality of LEDs that are separated by trenches formed on the segmented LED chip and arranged in a plurality of sections, each section including at least one first LED and at least one second LED; and a controller configured to: apply a forward bias to each of the first LEDs; apply a reverse bias to each of the second LEDs; and change a brightness of the first LEDs in any section based on a signal generated by the second LED in that section.Type: GrantFiled: September 8, 2017Date of Patent: May 15, 2018Assignee: Lumileds LLCInventors: Erik Charles Nelson, Isaac Wildeson, Parijat Deb, Kenneth Vampola
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Patent number: 9960330Abstract: Application of a wavelength conversion element is substantially independent of the fabrication of a side-emitting light emitting device. In an example embodiment, the wavelength conversion element is situated around the periphery of a non-wavelength converting lightguide that is situated above the light emitting surface. One or more specular and/or diffusing reflectors are used to direct the light in the lightguide toward the wavelength conversion element at the periphery. In another embodiment, an interference filter may be used to provide predominantly side-emitted light at interfaces between the elements of the light emitting device.Type: GrantFiled: July 9, 2014Date of Patent: May 1, 2018Assignee: Koninklijke Philips N.V.Inventors: Jianghong Yu, Nicolaas Joseph Martin Van Leth, Giovanni Cennini, Kenneth Vampola, Hugo Johan Comelissen
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Patent number: 9941454Abstract: Embodiments of the invention include a semiconductor light emitting diode (LED) attached to a top surface of a mount. A multi-layer reflector is disposed on the top surface of the mount adjacent to the LED. The multi-layer reflector includes layer pairs of alternating layers of low index of refraction material and high index of refraction material. A portion of the top surface in direct contact with the multi-layer reflector is non-reflective.Type: GrantFiled: October 31, 2016Date of Patent: April 10, 2018Assignee: Lumileds LLCInventors: Nathaniel T. Lawrence, Oleg Shchekin, Kenneth Vampola
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Patent number: 9893253Abstract: In one embodiment, the transparent growth substrate of an LED die is formed to have light scattering areas, such as voids formed by a laser. In another embodiment, the growth substrate is removed and replaced by another substrate that is formed with light scattering areas. In one embodiment, the light scattering areas are formed over the light absorbing areas of the LED die, to reduce the amount of incident light on those absorbing areas, and over the sides of the substrate to reduce light guiding. The replacement substrate may be formed to include reflective particles in selected areas. A 3D structure may be formed by stacking substrate layers containing the reflective areas. The substrate may be a transparent substrate or a phosphor tile that is affixed to the top of the LED.Type: GrantFiled: October 26, 2016Date of Patent: February 13, 2018Assignee: LUMILEDS LLCInventors: Kenneth Vampola, Hans-Helmut Bechtel
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Patent number: 9871167Abstract: Embodiments of the invention include a semiconductor structure including a light emitting layer sandwiched between an n-type region and a p-type region. A growth substrate is attached to the semiconductor structure. The growth substrate has at least one angled sidewall. A reflective layer is disposed on the angled sidewall. A majority of light extracted from the semiconductor structure and the growth substrate is extracted through a first surface of the growth substrate.Type: GrantFiled: March 31, 2014Date of Patent: January 16, 2018Assignee: Koninklijke Philips N.V.Inventors: Brendan Jude Moran, Marc Andre de Samber, Grigoriy Basin, Norbertus Antonius Maria Sweegers, Mark Melvin Butterworth, Kenneth Vampola, Clarisse Mazuir
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Publication number: 20170365746Abstract: In some embodiments of the invention, a device includes a semiconductor light emitting device having a first light extraction surface, a wavelength converting element, and a second light extraction surface. A majority of light extracted from the semiconductor light emitting device is extracted from the first light extraction surface. The first light extraction surface has a first area. The second light extraction surface is disposed over the first light extraction surface and has a second area. The first area is larger than the second area.Type: ApplicationFiled: December 8, 2015Publication date: December 21, 2017Inventors: Kenneth Vampola, Floris Crompvoets
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Publication number: 20170352788Abstract: Embodiments of the invention include a semiconductor light emitting device, a first wavelength converting member disposed on a top surface of the semiconductor light emitting device, and a second wavelength converting member disposed on a side surface of the semiconductor light emitting device. The first and second wavelength converting members include different wavelength converting materials.Type: ApplicationFiled: August 23, 2017Publication date: December 7, 2017Inventors: Kenneth Vampola, Han Ho Choi
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Publication number: 20170331011Abstract: A method according to embodiments of the invention includes disposing a support layer on a surface of a wavelength converting ceramic wafer. The wavelength converting ceramic wafer and the support layer are diced to form wavelength converting members. A wavelength converting member is attached to a light emitting device. After attaching the wavelength converting member to the light emitting device, the support layer is removed.Type: ApplicationFiled: May 26, 2017Publication date: November 16, 2017Inventors: April Dawn Schricker, Oleg Borisovich Shchekin, Kenneth Vampola, Hans-Helmut Bechtel, Guido Salmaso
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Patent number: 9806238Abstract: Embodiments of the invention include a semiconductor light emitting device, a first wavelength converting member disposed on a top surface of the semiconductor light emitting device, and a second wavelength converting member disposed on a side surface of the semiconductor light emitting device. The first and second wavelength converting members include different wavelength converting materials.Type: GrantFiled: March 26, 2013Date of Patent: October 31, 2017Assignee: Koninklijke Philips N.V.Inventors: Kenneth Vampola, Han Ho Choi
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Patent number: 9748457Abstract: In one embodiment, the transparent growth substrate of an LED die is formed to have light scattering areas, such as voids formed by a laser. In another embodiment, the growth substrate is removed and replaced by another substrate that is formed with light scattering areas. In one embodiment, the light scattering areas are formed over the light absorbing areas of the LED die, to reduce the amount of incident light on those absorbing areas, and over the sides of the substrate to reduce light guiding. The replacement substrate may be formed to include reflective particles in selected areas. A 3D structure may be formed by stacking substrate layers containing the reflective areas. The substrate may be a transparent substrate or a phosphor tile that is affixed to the top of the LED.Type: GrantFiled: October 26, 2016Date of Patent: August 29, 2017Assignee: Koninklijke Philips N.V.Inventors: Kenneth Vampola, Hans-Helmut Bechtel
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Patent number: 9666771Abstract: A method according to embodiments of the invention includes disposing a support layer (32) on a surface of a wavelength converting ceramic wafer (30). The wavelength converting ceramic wafer and the support layer are diced (42) to form wavelength converting members. A wavelength converting member is attached to a light emitting device. After attaching the wavelength converting member to the light emitting device, the support layer is removed.Type: GrantFiled: January 20, 2015Date of Patent: May 30, 2017Assignee: KONINKLIJKE PHILIPS N.V.Inventors: April Dawn Schricker, Oleg Borisovich Shchekin, Kenneth Vampola, Hans-Helmut Bechtel, Guido Salmaso
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Patent number: 9653665Abstract: Affixed over a transparent growth substrate (34) of an LED die (30) is a transparent rectangular pillar (40), having a footprint approximately the same size as the LED die. The pillar height is greater than a length of the LED die, and the pillar has an index (n) approximately equal to that of the substrate (e.g., 1.8), so there is virtually no TIR at the interface due to the matched indices. Surrounding the pillar and the LED die is a lens portion (42) having a diameter between 1.5-3 times the length of the LED die. The index of the lens portion is about 0.8 times the index of the substrate. The lens portion may have a dome shape (46). A large portion of the light exiting the substrate is internally reflected off the lateral pillar/cylinder interface and exits the top surface of the pillar. Thus, the emission is narrowed and light extraction efficiency is increased.Type: GrantFiled: July 2, 2014Date of Patent: May 16, 2017Assignee: Koninklijke Philips N.V.Inventors: Toni Lopez, Kenneth Vampola
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Publication number: 20170047492Abstract: In one embodiment, the transparent growth substrate of an LED die is formed to have light scattering areas, such as voids formed by a laser. In another embodiment, the growth substrate is removed and replaced by another substrate that is formed with light scattering areas. In one embodiment, the light scattering areas are formed over the light absorbing areas of the LED die, to reduce the amount of incident light on those absorbing areas, and over the sides of the substrate to reduce light guiding. The replacement substrate may be formed to include reflective particles in selected areas. A 3D structure may be formed by stacking substrate layers containing the reflective areas. The substrate may be a transparent substrate or a phosphor tile that is affixed to the top of the LED.Type: ApplicationFiled: October 26, 2016Publication date: February 16, 2017Inventors: Kenneth Vampola, Hans-Helmut Bechtel
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Publication number: 20170047493Abstract: Embodiments of the invention include a semiconductor light emitting diode (LED) attached to a top surface of a mount. A multi-layer reflector is disposed on the top surface of the mount adjacent to the LED. The multi-layer reflector includes layer pairs of alternating layers of low index of refraction material and high index of refraction material. A portion of the top surface in direct contact with the multi-layer reflector is non-reflective.Type: ApplicationFiled: October 31, 2016Publication date: February 16, 2017Inventors: Nathaniel T. Lawrence, Oleg Shchekin, Kenneth Vampola
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Publication number: 20170012183Abstract: A method according to embodiments of the invention includes disposing a support layer (32) on a surface of a wavelength converting ceramic wafer (30). The wavelength converting ceramic wafer and the support layer are diced (42) to form wavelength converting members. A wavelength converting member is attached to a light emitting device. After attaching the wavelength converting member to the light emitting device, the support layer is removed.Type: ApplicationFiled: January 20, 2015Publication date: January 12, 2017Inventors: April Dawn Schricker, Oleg Borisovich Shchekin, Kenneth Vampola, Hans-Helmut Bechtel, Guido Salmaso
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Patent number: 9508907Abstract: Embodiments of the invention include a semiconductor light emitting diode (LED) attached to a top surface of a mount. A multi-layer reflector is disposed on the top surface of the mount adjacent to the LED. The multi-layer reflector includes layer pairs of alternating layers of low index of refraction material and high index of refraction material. A portion of the top surface in direct contact with the multi-layer reflector is non-reflective.Type: GrantFiled: September 14, 2015Date of Patent: November 29, 2016Assignee: Koninklijke Philips N.V.Inventors: Nathaniel T. Lawrence, Oleg Shchekin, Kenneth Vampola
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Patent number: 9508908Abstract: In one embodiment, the transparent growth substrate (38) of an LED die is formed to have light scattering areas (40A-C), such as voids formed by a laser. In another embodiment, the growth substrate is removed and replaced by another substrate that is formed with light scattering areas. In one embodiment, the light scattering areas are formed over the light absorbing areas of the LED die, to reduce the amount of incident light on those absorbing areas, and over the sides (42A, 42B) of the substrate to reduce light guiding. Another embodiment comprises a replacement substrate may be formed to include reflective particles in selected areas where there are no corresponding light generating areas in the LED semiconductor layers such as—type metal contacts (28). This prevents reabsorption into absorbing regions of the semiconductor layer thereby enhancing external efficiency of the device. A 3D structure may be formed by stacking substrate layers containing the reflective areas.Type: GrantFiled: May 5, 2014Date of Patent: November 29, 2016Assignee: Koninklijke Philips N.V.Inventors: Kenneth Vampola, Hans-Helmut Bechtel
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Publication number: 20160240735Abstract: Embodiments of the invention include a semiconductor structure including a light emitting layer sandwiched between an n-type region and a p-type region. A growth substrate is attached to the semiconductor structure. The growth substrate has at least one angled sidewall. A reflective layer is disposed on the angled sidewall. A majority of light extracted from the semiconductor structure and the growth substrate is extracted through a first surface of the growth substrate.Type: ApplicationFiled: March 31, 2014Publication date: August 18, 2016Inventors: Brendan Jude Moran, Marc Andre de Samber, Grigoriy Basin, Norbertus Antonius Maria Sweegers, Mark Melvin Butterworth, Kenneth Vampola, Clarisse Mazuir
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Patent number: 9391243Abstract: To reduce absorption by an LED die (12) of light emitted by a phosphor layer (48), the absorbing semiconductor layers of the LED die (12) are separated from the phosphor layer by a relatively thick glass plate (44) affixed to the LED die or by the LED die transparent growth substrate. Therefore, phosphor light emitted at a sufficient angle towards the LED die will pass through the transparent spacer (44) and exit the sidewalls of the spacer, preventing the light from being absorbed by the LED die. The LED die may be GaN based. The spacer is at least 100 microns thick. A 16% gain in light extraction is achievable using the technique compared to the light emission where phosphor is directly deposited on the LED semiconductor layers.Type: GrantFiled: June 25, 2013Date of Patent: July 12, 2016Assignee: Koninklijke Philips N.V.Inventors: Mark Melvin Butterworth, Kenneth Vampola