Patents by Inventor Kenneth William West
Kenneth William West has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 8633092Abstract: An apparatus includes a primary planar quantum well and a planar distribution of dopant atoms. The primary planar quantum well is formed by a lower barrier layer, a central well layer on the lower barrier layer, and an upper barrier layer on the central well layer. Each of the layers is a semiconductor layer. One of the barrier layers has a secondary planar quantum well and is located between the planar distribution of dopant atoms and the central well layer. The primary planar quantum well may be undoped or substantially undoped, e.g., intrinsic semiconductor.Type: GrantFiled: December 12, 2012Date of Patent: January 21, 2014Assignee: Alcatel LucentInventors: Kirk William Baldwin, Loren N. Pfeiffer, Kenneth William West
-
Publication number: 20130130474Abstract: An apparatus includes a primary planar quantum well and a planar distribution of dopant atoms. The primary planar quantum well is formed by a lower barrier layer, a central well layer on the lower barrier layer, and an upper barrier layer on the central well layer. Each of the layers is a semiconductor layer. One of the barrier layers has a secondary planar quantum well and is located between the planar distribution of dopant atoms and the central well layer, The primary planar quantum well may be undoped or substantially undoped, e.g., intrinsic semiconductor.Type: ApplicationFiled: December 12, 2012Publication date: May 23, 2013Inventors: Kirk William Baldwin, Loren N. Pfeiffer, Kenneth William West
-
Patent number: 8362461Abstract: An apparatus includes a primary planar quantum well and a planar distribution of dopant atoms. The primary planar quantum well is formed by a lower barrier layer, a central well layer on the lower barrier layer, and an upper barrier layer on the central well layer. Each of the layers is a semiconductor layer. One of the barrier layers has a secondary planar quantum well and is located between the planar distribution of dopant atoms and the central well layer. The primary planar quantum well may be undoped or substantially undoped, e.g., intrinsic semiconductor.Type: GrantFiled: May 28, 2010Date of Patent: January 29, 2013Assignee: Alcatel LucentInventors: Kirk William Baldwin, Loren N. Pfeiffer, Kenneth William West
-
Patent number: 8324120Abstract: An apparatus includes a substrate with a planar surface, a multilayer of semiconductor layers located on the planar surface, a plurality of electrodes located over the multilayer, and a dielectric layer located between the electrodes and the multilayer. The multilayer includes a 2D quantum well. A first set of the electrodes is located to substantially surround a lateral area of the 2D quantum well. A second set of the electrodes is controllable to vary a lateral width of a non-depleted channel between the substantially surrounded lateral area of the 2D quantum well and another area of the 2D quantum well. A third set of the electrodes is controllable to vary an area of a non-depleted portion of the lateral area.Type: GrantFiled: May 6, 2011Date of Patent: December 4, 2012Assignee: Alcatel LucentInventors: Kirk William Baldwin, Loren N. Pfeiffer, Kenneth William West, Robert L Willett
-
Publication number: 20110212553Abstract: An apparatus includes a substrate with a planar surface, a multilayer of semiconductor layers located on the planar surface, a plurality of electrodes located over the multilayer, and a dielectric layer located between the electrodes and the multilayer. The multilayer includes a 2D quantum well. A first set of the electrodes is located to substantially surround a lateral area of the 2D quantum well. A second set of the electrodes is controllable to vary a lateral width of a non-depleted channel between the substantially surrounded lateral area of the 2D quantum well and another area of the 2D quantum well. A third set of the electrodes is controllable to vary an area of a non-depleted portion of the lateral area.Type: ApplicationFiled: May 6, 2011Publication date: September 1, 2011Inventors: Kirk William Baldwin, Loren N. Pfeiffer, Kenneth William West, Robert L. Willett
-
Patent number: 7960714Abstract: An apparatus includes a substrate with a planar surface, a multilayer of semiconductor layers located on the planar surface, a plurality of electrodes located over the multilayer, and a dielectric layer located between the electrodes and the multilayer. The multilayer includes a 2D quantum well. A first set of the electrodes is located to substantially surround a lateral area of the 2D quantum well. A second set of the electrodes is controllable to vary a lateral width of a non-depleted channel between the substantially surrounded lateral area of the 2D quantum well and another area of the 2D quantum well. A third set of the electrodes is controllable to vary an area of a non-depleted portion of the lateral area.Type: GrantFiled: December 23, 2008Date of Patent: June 14, 2011Assignee: Alcatel-Lucent USA Inc.Inventors: Kirk William Baldwin, Loren N. Pfeiffer, Kenneth William West, Robert L Willett
-
Publication number: 20100308302Abstract: An apparatus includes a primary planar quantum well and a planar distribution of dopant atoms. The primary planar quantum well is formed by a lower barrier layer, a central well layer on the lower barrier layer, and an upper barrier layer on the central well layer. Each of the layers is a semiconductor layer. One of the barrier layers has a secondary planar quantum well and is located between the planar distribution of dopant atoms and the central well layer. The primary planar quantum well may be undoped or substantially undoped, e.g., intrinsic semiconductor.Type: ApplicationFiled: May 28, 2010Publication date: December 9, 2010Inventors: Kirk William Baldwin, Loren N. Pfeiffer, Kenneth William West
-
Publication number: 20100155697Abstract: An apparatus includes a substrate with a planar surface, a multilayer of semiconductor layers located on the planar surface, a plurality of electrodes located over the multilayer, and a dielectric layer located between the electrodes and the multilayer. The multilayer includes a 2D quantum well. A first set of the electrodes is located to substantially surround a lateral area of the 2D quantum well. A second set of the electrodes is controllable to vary a lateral width of a non-depleted channel between the substantially surrounded lateral area of the 2D quantum well and another area of the 2D quantum well. A third set of the electrodes is controllable to vary an area of a non-depleted portion of the lateral area.Type: ApplicationFiled: December 23, 2008Publication date: June 24, 2010Inventors: Kirk William Baldwin, Loren N. Pfeiffer, Kenneth William West, Robert L. Willett
-
Patent number: 7402779Abstract: An MBE effusion cell is configured to produce an inverted temperature gradient; that is, the top surface of the melt is not cooler than the bottom surface of the melt. In one embodiment, the MBE effusion cell comprises a crucible having tip, central and base regions. First filaments are located laterally adjacent the tip region; second filaments are located laterally adjacent the central region; and third filaments are located laterally adjacent all three of the regions. The radial density of the number of the heater filaments is lower adjacent the base region than adjacent the tip or central regions. In another embodiment, further tailoring of the inverted temperature gradient is obtained by reducing the amount of insulation at the base of the crucible. In another embodiment, at least one heater filament extends substantially along the longitudinal axis of the crucible and is located adjacent its lateral wall.Type: GrantFiled: July 13, 2004Date of Patent: July 22, 2008Assignee: Lucent Technologies Inc.Inventors: Loren N. Pfeiffer, Kenneth William West
-
Patent number: 7329595Abstract: An effusion source comprises a vitreous C filament and a heater to increase the temperature of the filament to produce a C vapor. Also described is a deposition method comprising (a) depositing a layer of material on a substrate, and (b) during step (a), heating a body of material that includes vitreous carbon so that carbon from the body is vaporized and incorporated into the deposited layer.Type: GrantFiled: April 26, 2005Date of Patent: February 12, 2008Assignee: Lucent Technologies Inc.Inventors: Loren Neil Pfeiffer, Kenneth William West
-
Patent number: 6921726Abstract: A method includes epitaxially growing a semiconductor layer with a free surface and performing an anneal that reduces atomic roughness on the free surface. The free surface has an orientation with respect to lattice axes of the layer for which atoms in flat regions of the free surface have more chemical bonds to the layer than do, at least, some of the atoms at edges of monolayer steps on the free surface.Type: GrantFiled: March 13, 2002Date of Patent: July 26, 2005Assignee: Lucent Technologies Inc.Inventors: Hidefumi Akiyama, Loren Neil Pfeiffer, Kenneth William West
-
Patent number: 6661039Abstract: A hot-electron bolometric mixer/detector, which uses the nonlinearities of the heated two-dimensional electron gas medium, is described. Electrons in the illustrative embodiment of the present invention are “velocity-cooled” rather than “diffusion-cooled” or “phonon-cooled” like hot-electron bolometric mixer/detectors in the prior art. The illustrative embodiment is velocity-cooled when the elastic mean-free path of the electrons is greater than the channel length, L, of the mixer/detector. In this case, the motion of the hot electrons is more accurately modeled by their speed rather than in accordance with diffusion models. This leads to a mixer/detector with a wider modulation bandwidth at a lower power than is exhibited by mixer/detectors in the prior art.Type: GrantFiled: May 18, 2001Date of Patent: December 9, 2003Assignee: Lucent Technologies Inc.Inventors: Mark Lee, Loren Neil Pfeiffer, Kenneth William West
-
Publication number: 20030173559Abstract: A method includes epitaxially growing a semiconductor layer with a free surface and performing an anneal that reduces atomic roughness on the free surface. The free surface has an orientation with respect to lattice axes of the layer for which atoms in flat regions of the free surface have more chemical bonds to the layer than do, at least, some of the atoms at edges of monolayer steps on the free surface.Type: ApplicationFiled: March 13, 2002Publication date: September 18, 2003Inventors: Hidefumi Akiyama, Loren Neil Pfeiffer, Kenneth William West
-
Patent number: 6349454Abstract: A thin film resonator (TFR) is produced with an improved piezoelectric film which is epitaxially grown on a growing surface, resulting in a piezoelectric film with less grain boundaries. Epitaxial growth refers to the piezoelectric film having a crystallographic orientation take from or emulating the crystallographic orientation of a single crystal substrate or growing surface. For example, by epitaxially growing a piezoelectric film on a single crystal silicon substrate as the growing surface, an improved piezoelectric film is produced with little or no grain boundaries. Also provided is a method of making a TFR in which the piezoelectric film is grown on a substrate. Subsequently, a portion of the substrate is removed, and the electrodes are deposited on either side of the piezoelectric film.Type: GrantFiled: July 29, 1999Date of Patent: February 26, 2002Assignee: Agere Systems Guardian Corp.Inventors: Michael James Manfra, Loren Neil Pfeiffer, Kenneth William West, Yiu-Huen Wong
-
Patent number: 5844930Abstract: Quantum carrier confinement in a wire-like region defined by intersecting layers is significantly enhanced by various structural modifications of a conventional quantum wire device. In that way, operation of the device at room temperature and above is made feasible.Type: GrantFiled: November 13, 1996Date of Patent: December 1, 1998Assignee: Lucent Technologies Inc.Inventors: David Gershoni, Timothy Dean Harris, Joel Hasen, Loren Neil Pfeiffer, Kenneth William West