Abstract: Techniques for modeling a circuit cell of a microprocessor or other integrated circuit for hierarchical powergrid analysis are disclosed herein. Distribution coefficients, used to distribute node voltages and capacitances to respective parts of the cell, are determined for each internal node of the cell. Current distribution coefficients may also be determined for each resistor in the cell. Using the distribution coefficients, internal cell capacitances are modeled as port capacitors. Resistive elements are modeled as a resistor network having no internal nodes. Transistor elements are modeled as port current sources. Such a model permits back calculation of internal node voltages and currents.

Abstract: Ports at which a cell served by a local powergrid is to be modeled are designated on a selected metal layer N-levels down from the topmost metal layer of the local powergrid. The cell is modeled at the designated ports, excluding any metal layers above the selected metal layer. Any metal layers of the local powergrid above the selected metal layer are included as part of a model of the global powergrid, rather than as part of the local powergrid, and a hierarchical powergrid analysis is performed.