Patents by Inventor Kenny Geng
Kenny Geng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11716546Abstract: An imaging device includes groupings of photodiodes having four photodiodes. A transfer transistor is between each photodiode and a floating diffusion. Each floating diffusion is coupled to up to two photodiodes per grouping at a time through transfer transistors. A buffer transistor is coupled to each floating diffusion. The buffer transistors may be in a first or second grouping of buffer transistors. A first bit line is coupled to up to two buffer transistors of the first grouping and a second bit line is coupled to up to two buffer transistors of the second grouping of buffer transistors at a time. A color filter array including a plurality of groupings of color filters is disposed over respective photodiodes of the photodiode array, wherein each grouping of color filters includes four color filters having a same color, wherein each grouping of color filters overlaps two groupings of photodiodes.Type: GrantFiled: February 3, 2022Date of Patent: August 1, 2023Assignee: OmniVision Technologies, Inc.Inventors: Qingfei Chen, Rui Wang, Wei Wei Wang, Zhiyong Zhan, Xin Wang, Qingwei Shan, Kenny Geng
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Patent number: 11476290Abstract: An image sensor includes photodiodes disposed in a pixel region and proximate to a front side of a semiconductor layer. A backside metal grating is formed in a backside oxide layer disposed proximate to a backside of the semiconductor layer. A deep trench isolation (DTI) structure with a plurality of pixel region portions and an edge region portion is formed in the semiconductor layer. The pixel region portions are disposed in the pixel region of the semiconductor layer such that incident light is directed through the backside metal grating, through the backside of the semiconductor layer, and between the pixel region portions of the DTI structure to the photodiodes. The edge region portion of the DTI structure is disposed in an edge region outside of the pixel region. The edge region portion of the DTI structure is biased with a DTI bias voltage.Type: GrantFiled: July 1, 2020Date of Patent: October 18, 2022Assignee: OmniVision Technologies, Inc.Inventors: Hui Zang, Gang Chen, Kenny Geng
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Publication number: 20220159222Abstract: An imaging device includes groupings of photodiodes having four photodiodes. A transfer transistor is between each photodiode and a floating diffusion. Each floating diffusion is coupled to up to two photodiodes per grouping at a time through transfer transistors. A buffer transistor is coupled to each floating diffusion. The buffer transistors may be in a first or second grouping of buffer transistors. A first bit line is coupled to up to two buffer transistors of the first grouping and a second bit line is coupled to up to two buffer transistors of the second grouping of buffer transistors at a time. A color filter array including a plurality of groupings of color filters is disposed over respective photodiodes of the photodiode array, wherein each grouping of color filters includes four color filters having a same color, wherein each grouping of color filters overlaps two groupings of photodiodes.Type: ApplicationFiled: February 3, 2022Publication date: May 19, 2022Inventors: Qingfei Chen, Rui Wang, Wei Wei Wang, Zhiyong Zhan, Xin Wang, Qingwei Shan, Kenny Geng
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Patent number: 11284045Abstract: An imaging device includes groupings of photodiodes having four photodiodes. A transfer transistor is between each photodiode and a floating diffusion. Each floating diffusion is coupled to up to two photodiodes per grouping at a time through transfer transistors. A buffer transistor is coupled to each floating diffusion. The buffer transistors may be in a first or second grouping of buffer transistors. A first bit line is coupled to up to two buffer transistors of the first grouping and a second bit line is coupled to up to two buffer transistors of the second grouping of buffer transistors at a time. A color filter array including a plurality of groupings of color filters is disposed over respective photodiodes of the photodiode array, wherein each grouping of color filters includes four color filters having a same color, wherein each grouping of color filters overlaps two groupings of photodiodes.Type: GrantFiled: April 22, 2020Date of Patent: March 22, 2022Assignee: OmniVision Technologies. Inc.Inventors: Qingfei Chen, Rui Wang, Wei Wei Wang, Zhiyong Zhan, Xin Wang, Qingwei Shan, Kenny Geng
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Publication number: 20220005849Abstract: An image sensor includes photodiodes disposed in a pixel region and proximate to a front side of a semiconductor layer. A backside metal grating is formed in a backside oxide layer disposed proximate to a backside of the semiconductor layer. A deep trench isolation (DTI) structure with a plurality of pixel region portions and an edge region portion is formed in the semiconductor layer. The pixel region portions are disposed in the pixel region of the semiconductor layer such that incident light is directed through the backside metal grating, through the backside of the semiconductor layer, and between the pixel region portions of the DTI structure to the photodiodes. The edge region portion of the DTI structure is disposed in an edge region outside of the pixel region. The edge region portion of the DTI structure is biased with a DTI bias voltage.Type: ApplicationFiled: July 1, 2020Publication date: January 6, 2022Inventors: Hui Zang, Gang Chen, Kenny Geng
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Publication number: 20210337169Abstract: An imaging device includes groupings of photodiodes having four photodiodes. A transfer transistor is between each photodiode and a floating diffusion. Each floating diffusion is coupled to up to two photodiodes per grouping at a time through transfer transistors. A buffer transistor is coupled to each floating diffusion. The buffer transistors may be in a first or second grouping of buffer transistors. A first bit line is coupled to up to two buffer transistors of the first grouping and a second bit line is coupled to up to two buffer transistors of the second grouping of buffer transistors at a time. A color filter array including a plurality of groupings of color filters is disposed over respective photodiodes of the photodiode array, wherein each grouping of color filters includes four color filters having a same color, wherein each grouping of color filters overlaps two groupings of photodiodes.Type: ApplicationFiled: April 22, 2020Publication date: October 28, 2021Inventors: Qingfei Chen, Rui Wang, Wei Wei Wang, Zhiyong Zhan, Xin Wang, Qingwei Shan, Kenny Geng
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Patent number: 11122259Abstract: A test voltage sample and hold circuitry is disclosed in a readout circuitry of an image sensor. This circuitry samples a voltage at demand value based on a ramp voltage shared by the ADC comparators of the readout circuitry. The value of the sampled voltage is controlled by a control circuitry which is able to predict and calculate at what time a ramp generator may carry the demand voltage value. The sampled voltage is held by a hold capacitor during readout of one row and is accessed during the next row by the control circuitry as test data to drive a device under test (DUT) which may be any portion of the image sensor to be tested. Measured data out of the DUT is compared with expected data. Based on the result of the comparison, a signal indicates the pass or fail of the self-test concludes a self-test of the DUT.Type: GrantFiled: February 18, 2020Date of Patent: September 14, 2021Assignee: OmniVision Technologies, Inc.Inventors: Zhiyong Zhan, Tongtong Yu, Xin Wang, Liang Zuo, Kenny Geng
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Publication number: 20210258563Abstract: A test voltage sample and hold circuitry is disclosed in a readout circuitry of an image sensor. This circuitry samples a voltage at demand value based on a ramp voltage shared by the ADC comparators of the readout circuitry. The value of the sampled voltage is controlled by a control circuitry which is able to predict and calculate at what time a ramp generator may carry the demand voltage value. The sampled voltage is held by a hold capacitor during readout of one row and is accessed during the next row by the control circuitry as test data to drive a device under test (DUT) which may be any portion of the image sensor to be tested. Measured data out of the DUT is compared with expected data. Based on the result of the comparison, a signal indicates the pass or fail of the self-test concludes a self-test of the DUT.Type: ApplicationFiled: February 18, 2020Publication date: August 19, 2021Applicant: OmniVision Technologies, Inc.Inventors: Zhiyong Zhan, Tongtong Yu, Xin Wang, Liang Zuo, Kenny Geng
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Publication number: 20190324306Abstract: A display system comprises a first display for providing a first value and a second display for providing a second value. The displayed image is a product of multiplication of the first value provided by the first display and the second value provided by the second display. The first display is a transmissive display comprises: a first glass substrate, an unpatterned ITO layer, a LC layer, a patterned ITO layer having isolated electrodes, and a second glass substrate. The second display is a reflective LCOS comprises: a glass substrate, an unpatterned ITO layer, a LC layer, a metal electrode layer, and a silicon substrate.Type: ApplicationFiled: April 23, 2018Publication date: October 24, 2019Applicant: OmniVision Technologies, Inc.Inventors: Suganda Jutamulia, Lequn Liu, Kenny Geng, Guannho Tsau
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Patent number: 10437120Abstract: A display system comprises a first display for providing a first value and a second display for providing a second value. The displayed image is a product of multiplication of the first value provided by the first display and the second value provided by the second display. The first display is a transmissive display comprises: a first glass substrate, an unpatterned ITO layer, a LC layer, a patterned ITO layer having isolated electrodes, and a second glass substrate. The second display is a reflective LCOS comprises: a glass substrate, an unpatterned ITO layer, a LC layer, a metal electrode layer, and a silicon substrate.Type: GrantFiled: April 23, 2018Date of Patent: October 8, 2019Assignee: OmniVision Technologies, Inc.Inventors: Suganda Jutamulia, Lequn Liu, Kenny Geng, Guannho Tsau