Abstract: A bipolar electrostatic chuck containing apparatus, and a concomitant method, for balancing an electrostatic force that the bipolar electrostatic chuck imparts upon a workpiece. More specifically, the bipolar electrostatic chuck contains a chuck body having a pair of electrodes embedded therein, a primary power supply and an offset power supply. Each electrode within the bipolar electrostatic chuck is respectively connected to a terminal on the primary power. Based upon a voltage produced by the primary power supply and a bias voltage of the workpiece, an offset voltage is applied by the offset power supply to one of the terminals, thus balancing the electrostatic force applied to the workpiece.

Abstract: A bipolar electrostatic chuck containing apparatus, and a concomitant method, for balancing an electrostatic force that the bipolar electrostatic chuck imparts upon a workpiece. More specifically, the bipolar electrostatic chuck contains a chuck body having a pair of electrodes embedded therein, a primary power supply and an offset power supply. Each electrode within the bipolar electrostatic chuck is respectively connected to a terminal on the primary power. Based upon a voltage produced by the primary power supply and a bias voltage of the workpiece, an offset voltage is applied by the offset power supply to one of the terminals, thus balancing the electrostatic force applied to the workpiece.

Abstract: An RF coil for a plasma chamber in a semiconductor fabrication system is conditioned to reduce shedding of particulate matter onto the workpiece. In the illustrated embodiment, the coil is sputtered prior to sputtering the target so as to remove oxides and other contaminants from the surface of the coil. As a result, shedding of particulate matter from target material subsequently deposited onto the coil is reduced.

Abstract: In the manufacture of high temperature deposited aluminum contacts onto silicon substrates wherein a barrier layer of titanium nitride is used, the improvement wherein the titanium nitride contains oxygen. The improved contacts are made by depositing a titanium-containing layer onto a silicon substrate, performing a first, high temperature nitrogen anneal in vacuum to form a low resistance TiSi.sub.x contact to the silicon, and performing a second, lower temperature anneal in vacuum using a mixture of nitrogen and oxygen to stuff the titanium nitride layer. This stuffed titanium nitride layer provides an improved barrier to a subsequently deposited high temperature deposited aluminum layer.

Abstract: A process is described for forming, over a silicon surface, a titanium nitride barrier layer having a surface of (111) crystallographic orientation. The process comprises: depositing a first titanium layer over a silicon surface; sputtering a titanium nitride layer over the titanium layer; depositing a second titanium layer over the sputtered titanium nitride layer; and then annealing the structure in the presence of a nitrogen-bearing gas, and in the absence of an oxygen-bearing gas, to form the desired titanium nitride having a surface of (111) crystallographic orientation and a sufficient thickness to provide protection of the underlying silicon against spiking of the aluminum. When an aluminum layer is subsequently formed over the (111) oriented titanium nitride surface, the aluminum will then assume the same (111) crystallographic orientation, resulting in an aluminum layer having enhanced resistance to electromigration.

Abstract: In the manufacture of high temperature deposited aluminum contacts onto silicon substrates wherein a barrier layer of titanium nitride is used, the improvement wherein the titanium nitride contains oxygen. The improved contacts are made by depositing a titanium-containing layer onto a silicon substrate, performing a first, high temperature nitrogen anneal in vacuum to form a low resistance TiSi.sub.x contact to the silicon, and performing a second, lower temperature anneal in vacuum using a mixture of nitrogen and oxygen to add oxygen to the titanium nitride layer. This oxygen-containing titanium nitride layer provides an improved barrier to a subsequently deposited high temperature deposited aluminum layer.

Abstract: A process is described for forming, over a silicon surface, a titanium nitride barrier layer having a surface of (111) crystallographic orientation. The process comprises: depositing a first titanium layer over a silicon surface; sputtering a titanium nitride layer over the titanium layer; depositing a second titanium layer over the sputtered titanium nitride layer; and then annealing the structure in the presence of a nitrogen-bearing gas, and in the absence of an oxygen-bearing gas, to form the desired titanium nitride having a surface of (111) crystallographic orientation and a sufficient thickness to provide protection of the underlying silicon against spiking of the aluminum. When an aluminum layer is subsequently formed over the (111) oriented titanium nitride surface, the aluminum will then assume the same (111) crystallographic orientation, resulting in an aluminum layer having enhanced resistance to electromigration.

Abstract: A process is described for forming, over a silicon surface, a titanium nitride barrier layer having a surface of (111) crystallographic orientation. The process comprises: depositing a first titanium layer over a silicon surface; sputtering a titanium nitride layer over the titanium layer; depositing a second titanium layer over the sputtered titanium nitride layer; and then annealing the structure in the presence of a nitrogen-bearing gas, and in the absence of an oxygen-bearing gas, to form the desired titanium nitride having a surface of (111) crystallographic orientation and a sufficient thickness to provide protection of the underlying silicon against spiking of the aluminum. When an aluminum layer is subsequently formed over the (111) oriented titanium nitride surface, the aluminum will then assume the same (111) crystallographic orientation, resulting in an aluminum layer having enhanced resistance to electromigration.