Abstract: Embodiments include a plasma processing method for cleaning polymer byproducts from interior surfaces of the plasma chamber. In an embodiment the plasma process may include processing a workpiece in a plasma processing chamber. Thereafter, the method may include removing the workpiece from the processing chamber. After the workpiece is removed, embodiments may include cleaning the plasma processing chamber with a cleaning process that includes a high pressure cleaning process, a first low pressure cleaning process, and a second low pressure cleaning process, wherein the second low pressure cleaning process includes applying a pulsed bias.

Abstract: Embodiments include a plasma processing method for cleaning polymer byproducts from interior surfaces of the plasma chamber. In an embodiment the plasma process may include processing a workpiece in a plasma processing chamber. Thereafter, the method may include removing the workpiece from the processing chamber. After the workpiece is removed, embodiments may include cleaning the plasma processing chamber with a cleaning process that includes a high pressure cleaning process, a first low pressure cleaning process, and a second low pressure cleaning process, wherein the second low pressure cleaning process includes applying a pulsed bias.

Abstract: Boron-doped carbon-based hardmask etch processing is described. In an example, a method of patterning a film includes etching a boron-doped amorphous carbon layer with a plasma based on a combination of CH4/N2/O2 and a flourine-rich source such as, but not limited to, CF4, SF6 or C2F6.

Abstract: A tunable ring assembly, a plasma processing chamber having a tunable ring assembly and method for tuning a plasma process is provided. In one embodiment, a tunable ring assembly includes an outer ceramic ring having an exposed top surface and a bottom surface and an inner silicon ring configured to mate with the outer ceramic ring to define an overlap region, the inner silicon ring having an inner surface, a top surface and a notch formed between the inner surface and the top surface, the inner surface defining an inner diameter of the ring assembly, the notch is sized to accept an edge of a substrate, an outer portion of the top surface of the inner silicon ring configured to contact in the overlap region and underlying an inner portion of the bottom surface of the outer ceramic ring.

Abstract: The disclosure concerns a plasma-enhanced etch process in which chamber pressure and/or RF power level is ramped throughout the etch process.

Abstract: Boron-doped carbon-based hardmask etch processing is described. In an example, a method of patterning a film includes etching a boron-doped amorphous carbon layer with a plasma based on a combination of CH4/N2/O2 and a flourine-rich source such as, but not limited to, CF4, SF6 or C2F6.

Abstract: Plasma etching of boron-doped carbonaceous mask layers with an etchant gas mixture including CxFy or CxHyFz, and at least one of COS and CF3I. Etchant gas mixtures may further include a carbon-free fluorine source gas, such as SF6 or NF3, and/or an oxidizer, such as O2, for higher etch rates. Nitrogen-containing source gases may also be provided in the etchant gas mixture to reduce sidewall bowing in high aspect ratio (HAR) feature etches.

Abstract: A method for etching a substrate includes etching at least one first layer of the substrate with a non-uniform substrate temperature and etching at least one second layer of the substrate with uniform substrate temperatures.

Abstract: Methods of etching HAR features in a dielectric layer are described. In one embodiment, a substrate is provided into an etch chamber. The substrate has a patterned mask disposed on a dielectric layer formed thereon where the patterned mask has openings. A gas mixture is provided into the etch chamber, the gas mixture includes CO, O2, a fluorocarbon gas, and an optional inert gas. A plasma is formed from the gas mixture.

Abstract: Plasma etching of boron-doped carbonaceous mask layers with an etchant gas mixture including CxFy or CxHyFz, and at least one of COS and CF3I. Etchant gas mixtures may further include a carbon-free fluorine source gas, such as SF6 or NF3, and/or an oxidizer, such as O2, for higher etch rates. Nitrogen-containing source gases may also be provided in the etchant gas mixture to reduce sidewall bowing in high aspect ratio (HAR) feature etches.

Abstract: A method for etching a substrate includes etching at least one first layer of the substrate with a non-uniform substrate temperature and etching at least one second layer of the substrate with uniform substrate temperatures.

Abstract: Methods for forming anisotropic features for high aspect ratio application in etch process are provided. The methods described herein advantageously facilitates profile and dimension control of features with high aspect ratios. In one embodiment, a method for anisotropic etching a dielectric layer on a substrate includes providing a substrate having a patterned mask layer disposed on a dielectric layer in an etch chamber, supplying a gas mixture including at least a fluorine and carbon containing gas and a silicon fluorine gas into the etch chamber, and etching features in the dielectric layer in the presence of a plasma formed from the gas mixture.