Abstract: The invention relates to a method, a device and a system for the treatment of biological frozen samples using plasma focused ion beams (FIB). The samples can then be used for mass spectrometry (MS), genomics, such as gene sequencing analysis or next generation sequencing (NGS) analysis, and proteomics. The present invention particularly relates to a method of treatment of at least one biological sample. This method is particularly used for high performance microscopy, proteomics analytics, sequencing, such as NGS etc. According to the present invention the method comprises the steps of providing at least one biological sample in frozen form. The milling treats at least one part of the sample by a plasma ion beam comprising at least one of an O+ and/or a Xe+ plasma.

Abstract: Method for preparing site-specific, plan-view lamellae from multilayered microelectronic devices. A focused ion beam that is directed, with an etch-assisting gas, toward an uppermost layer of a device removes at least that uppermost layer and thereby exposes an underlying layer over, or comprising, a target area from which the site-specific, plan-view lamella is to be prepared, wherein the focused ion beam is in a face-on orientation in removing the uppermost layer to expose the underlying layer. In a preferred embodiment, the etch-assisting gas comprises methyl nitroacetate. In alternative embodiments, the etch-assisting gas is methyl acetate, ethyl acetate, ethyl nitroacetate, propyl acetate, propyl nitroacetate, nitro ethyl acetate, methyl methoxyacetate, or methoxy acetylchloride.

Abstract: Methods and apparatuses disclosed herein for large-area 3D analysis of samples using glancing incidence FIB milling. An example method at least includes milling, with a focused ion beam, a sample at a shallow angle and at a plurality of rotational orientations to remove a layer of the sample and to expose a surface, and after milling, imaging, with a charged particle beam, the exposed surface of the sample.

Abstract: The invention relates to a method, a device and a system for the treatment of biological frozen samples using plasma focused ion beams (FIB). The samples can then be used for mass spectrometry (MS), genomics, such as gene sequencing analysis or next generation sequencing (NGS) analysis, and proteomics. The present invention particularly relates to a method of treatment of at least one biological sample. This method is particularly used for high performance microscopy, proteomics analytics, sequencing, such as NGS etc. According to the present invention the method comprises the steps of providing at least one biological sample in frozen form. The milling treats at least one part of the sample by a plasma ion beam comprising at least one of an O+ and/or a Xe+ plasma.

Abstract: Method for preparing site-specific, plan-view lamellae from multilayered microelectronic devices. A focused ion beam that is directed, with an etch-assisting gas, toward an uppermost layer of a device removes at least that uppermost layer and thereby exposes an underlying layer over, or comprising, a target area from which the site-specific, plan-view lamella is to be prepared, wherein the focused ion beam is in a face-on orientation in removing the uppermost layer to expose the underlying layer. In a preferred embodiment, the etch-assisting gas comprises methyl nitroacetate. In alternative embodiments, the etch-assisting gas is methyl acetate, ethyl acetate, ethyl nitroacetate, propyl acetate, propyl nitroacetate, nitro ethyl acetate, methyl methoxyacetate, or methoxy acetylchloride.

Abstract: Method for preparing site-specific, plan-view lamellae from multilayered microelectronic devices. A focused ion beam that is directed, with an etch-assisting gas, toward an uppermost layer of a device removes at least that uppermost layer and thereby exposes an underlying layer over, or comprising, a target area from which the site-specific, plan-view lamella is to be prepared, wherein the focused ion beam is in a face-on orientation in removing the uppermost layer to expose the underlying layer. In a preferred embodiment, the etch-assisting gas comprises methyl nitroacetate. In alternative embodiments, the etch-assisting gas is methyl acetate, ethyl acetate, ethyl nitroacetate, propyl acetate, propyl nitroacetate, nitro ethyl acetate, methyl methoxyacetate, or methoxy acetylchloride.

Abstract: Method and system for enhanced charged particle beam processes for carbon removal. With the method and system for enhancing carbon removal, associated method and system for decreasing levels of carbon impurity in depositions, also using a precursor gas in charged particle beam processes (and particularly focused ion beam methodologies), are provided. In a preferred embodiment, the precursor gas comprises methyl nitroacetate. In alternative embodiments, the precursor gas is methyl acetate, ethyl acetate, ethyl nitroacetate, propyl acetate, propyl nitroacetate, nitro ethyl acetate, methyl methoxyacetate, or methoxy acetylchloride.

Abstract: The invention relates to a method, a device and a system for the treatment of biological frozen samples using plasma focused ion beams (FIB). The samples can then be used for mass spectrometry (MS), genomics, such as gene sequencing analysis or next generation sequencing (NGS) analysis, and proteomics. The present invention particularly relates to a method of treatment of at least one biological sample. This method is particularly used for high performance microscopy, proteomics analytics, sequencing, such as NGS etc. According to the present invention the method comprises the steps of providing at least one biological sample in frozen form. The milling treats at least one part of the sample by a plasma ion beam comprising at least one of an O+ and/or a Xe+ plasma.

Abstract: Method for preparing site-specific, plan-view lamellae from multilayered microelectronic devices. A focused ion beam that is directed, with an etch-assisting gas, toward an uppermost layer of a device removes at least that uppermost layer and thereby exposes an underlying layer over, or comprising, a target area from which the site-specific, plan-view lamella is to be prepared, wherein the focused ion beam is in a face-on orientation in removing the uppermost layer to expose the underlying layer. In a preferred embodiment, the etch-assisting gas comprises methyl nitroacetate. In alternative embodiments, the etch-assisting gas is methyl acetate, ethyl acetate, ethyl nitroacetate, propyl acetate, propyl nitroacetate, nitro ethyl acetate, methyl methoxyacetate, or methoxy acetylchloride.

Abstract: Method and system for enhanced charged particle beam processes for carbon removal. With the method and system for enhancing carbon removal, associated method and system for decreasing levels of carbon impurity in depositions, also using a precursor gas in charged particle beam processes (and particularly focused ion beam methodologies), are provided. In a preferred embodiment, the precursor gas comprises methyl nitroacetate. In alternative embodiments, the precursor gas is methyl acetate, ethyl acetate, ethyl nitroacetate, propyl acetate, propyl nitroacetate, nitro ethyl acetate, methyl methoxyacetate, or methoxy acetylchloride.