Abstract: An object of the present invention is to provide a moving object utilization system and a moving object utilization method capable of grasping whether a moving object to be used by a user is appropriately used or has appropriately been used. A moving object utilization system comprising a plurality of user terminals operated by a plurality of respective users; and a server device capable of establishing communication connection with the user terminals, the moving object utilization system providing a service for the plurality of users to use a moving object in turn, wherein the server device includes an information transmitter that transmits user information on one user who is using a moving object and/or using state information on a using state of a moving object to another user terminal operated by another user different from the one user.

Abstract: A semiconductor storage device of embodiments includes a block constituted with a plurality of strings each including a plurality of memory cell transistors, a plurality of word lines, a bit line, a source line, and a control circuit configured to perform erase operation on the plurality of memory cell transistors, and the control circuit changes setting of first erase-verify operation included in the erase operation for an open block including a memory cell transistor having an erase level and setting of second erase-verify operation included in erase operation for a closed block not including a memory cell transistor having an erase block.

Abstract: A semiconductor memory device performs a write operation and an erase operation. The write operation includes a first program operation that applies a first program voltage to a first conductive layer. The first program voltage increases by a first offset voltage together with an increase in an execution count of a first write loop. An erase operation includes a program voltage control operation and an erase voltage supply operation that applies an erase voltage to a first wiring. The program voltage control operation includes a second program operation that applies a second program voltage to a third conductive layer. The second program voltage increases by a second offset voltage together with an increase in a number of times of execution of a second write loop. A magnitude of the first program voltage is adjusted according to a magnitude of the second program voltage.

Abstract: A semiconductor storage device includes a memory cell connected to a word line, and a control circuit configured to execute a write operation that repeats a program loop including a program operation of applying a program voltage to the word line and a verification operation to be executed after the program operation. The control circuit, during the write operation, increases the program voltage by a first amount each time the program loop is repeated, and after the write operation is interrupted and resumed, changes the increase in the program voltage from the first amount to a second amount, which is a positive number smaller than the first amount.

Abstract: A semiconductor storage device includes a memory cell connected to a word line, and a control circuit configured to execute a write operation that repeats a program loop including a program operation of applying a program voltage to the word line and a verification operation to be executed after the program operation. The control circuit, during the write operation, increases the program voltage by a first amount each time the program loop is repeated, and after the write operation is interrupted and resumed, changes the increase in the program voltage from the first amount to a second amount, which is a positive number smaller than the first amount.

Abstract: An object of the present invention is to provide a ferroelectric element having excellent properties, which includes a monocrystalline film of ?-Al2O3 formed as a buffer layer on a silicon substrate. The monocrystalline ?-Al2O3 film 6 is formed on the silicon substrate 4 which is the lowermost layer of an MFMIS structure 2. On the monocrystalline ?-Al2O3 film 6, there is formed an electrically conductive oxide in the form of a LaNiO3 film 8 as a lower electrode. On the LaNiO3 film 8, there is formed a PZT thin film 10 which is a ferroelectric material. ON the PZT thin film 10, there is formed a Pt film as an upper electrode.