Abstract: A solvent composition comprising (a) dichloropentafluoropropane, (b) trans-1,2-dichloroethylene and (c) methanol, wherein the proportions of (a), (b) and (c) in the total amount of (a), (b) and (c) are from 57 to 75 wt %, from 20 to 35 wt % and from 5 to 8 wt %, respectively.

Abstract: A mixed solvent composition comprising dichloropentafluoropropane and at least one component selected from the group consisting of 1,1,1,2,3,4,4,5,5,5-decafluoropentane and perfluorohexane as the essential components, or a mixed solvent composition comprising dichloropentafluoropropane, an alcohol and at least one component selected from the group consisting of 1,1,1,2,3,4,4,5,5,5-decafluoropentane and perfluorohexane.

Abstract: An azeotropic composition consisting of 89.2 wt % of 1,1,1,2,2,3,3,4,4,5,5,6,6-tridecafluorohexane and 10.8 wt % of methanol and an azeotropic composition consisting of 91.1 wt % of 1,1,1,2,2,3,3,4,4,5,5,6,6-tridecafluorohexane and 8.9 wt % of ethanol.The present invention provides alternative azeotropic solvent compositions which have excellent properties of conventional 1,1,2-trichloro-l,2,2-trifluoroethane and do not deplete the stratospheric ozone layer.

Abstract: A hydrochlorofluorocarbon azeotropic or azeotropic-like mixture comprising at least one member selected from the group consisting of hydrogen-containing fluoropropanes of the formula I:CH.sub.a Cl.sub.b F.sub.c CF.sub.2 CH.sub.x Cl.sub.y F.sub.z (I)wherein a+b+c=3, x+y+z=3, a+x.gtoreq.1, b+y.gtoreq.1, and 0.ltoreq.a,b,c,x,y,z.ltoreq.3, and at least one member selected from the group of compounds II consisting of halogenated hydrocarbons having a boiling point of from 20.degree. to 85.degree. C. other than said hydrochlorofluoropropanes, hydrocarbons having a boiling point of from 20.degree. to 85.degree. C. and alcohols having from 1 to 4 carbon atoms.

Abstract: A hydrochlorofluoropropane azeotropic or azeotropic-like composition comprising at least two members selected from the group consisting of hydrochlorofluoropropanes of the formula I:CH.sub.a Cl.sub.b F.sub.c CF.sub.2 CH.sub.x Cl.sub.y F.sub.z (I)wherein a+b+c=3, x+y+z=3, a+x.gtoreq.1, b+y.gtoreq.1, and 0.ltoreq.a,b,c,x,y,z.ltoreq.3.

Abstract: A dry-developing positive resist composition consisting of (a) a polymeric material containing, in the molecular structure, unsaturated hydrocarbon bonds inclusive of vinyl, allyl, cinnamoyl, or acryl double bonds or epoxy groups or halogen atoms and (b) 1% to 70% by weight, based on the weight of the composition, of a silicon compound. A positive resist pattern is formed on a substrate by a process comprising coating the substrate with said resist composition, exposing the resist layer to radiation, and developing a resist pattern on the substrate by treatment with gas plasma.

Abstract: A dry-developing negative resist composition consisting of (a) a polymer of a monomer of the following formula I or II or a copolymer of a monomer of the following formula I with a monomer of the following formula II, ##STR1## in which R represents alkyl of 1 to 6 carbon atoms, benzyl, phenyl, or cyclohexyl and (b) 1% to 70% by weight, based on the weight of the composition, of a silicone compound. A negative resist pattern can be formed on a substrate by a process comprising coating the substrate with the resist composition, exposing the resist layer to an ionizing radiation, subjecting the resist layer to a relief treatment, and developing a resist pattern on the substrate by treatment with gas plasma.