Patents by Inventor Kensei Nakao

Kensei Nakao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor laser and method of manufacturing the same
    Patent number: 6501090
    Abstract: In the S3-type semiconductor laser, when an angle of a first growth profile line to the first principal plane, the first growth profile line connecting respective lower side lines of an upper inclined plane and a lower inclined plane of the first layer of the first conduction type cladding layer is &thgr;1, an angle of a second growth profile line to the first principal plane, the second growth profile line connecting respective lower side lines of an upper inclined plane and a lower inclined plane of the second layer of the first conduction type cladding layer is &thgr;2, an angle of a third growth profile line to the first principal plane, the third growth profile line connecting respective lower side lines of an upper inclined plane and a lower inclined plane of the third layer of the first conduction type cladding layer is &thgr;3, and an angle of a fourth growth profile line to the first principal plane, the fourth growth profile line connecting respective lower side lines of an upper inclined plane and
    Type: Grant
    Filed: January 15, 2002
    Date of Patent: December 31, 2002
    Assignee: Fujitsu Quantum Devices Limited
    Inventors: Akira Furuya, Chikashi Anayama, Katsumi Sugiura, Kensei Nakao, Taro Hasegawa
  • Semiconductor laser and method of manufacturing the same
    Publication number: 20020094677
    Abstract: In the S3-type semiconductor laser, when an angle of a first growth profile line to the first principal plane, the first growth profile line connecting respective lower side lines of an upper inclined plane and a lower inclined plane of the first layer of the first conduction type cladding layer is &thgr;1, an angle of a second growth profile line to the first principal plane, the second growth profile line connecting respective lower side lines of an upper inclined plane and a lower inclined plane of the second layer of the first conduction type cladding layer is &thgr;2, an angle of a third growth profile line to the first principal plane, the third growth profile line connecting respective lower side lines of an upper inclined plane and a lower inclined plane of the third layer of the first conduction type cladding layer is &thgr;3, and an angle of a fourth growth profile line to the first principal plane, the fourth growth profile line connecting respective lower side lines of an upper inclined plane and
    Type: Application
    Filed: January 15, 2002
    Publication date: July 18, 2002
    Applicant: Fujitsu Quantum Devices Limited
    Inventors: Akira Furuya, Chikashi Anayama, Katsumi Sugiura, Kensei Nakao, Taro Hasegawa