Patents by Inventor KENSEI TAKAHASHI

KENSEI TAKAHASHI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10978469
    Abstract: A semiconductor storage device includes a semiconductor substrate; an insulating layer provided on the semiconductor substrate; a barrier metal layer provided on the insulating layer; an aluminum compound layer provided on the barrier metal layer; an amorphous layer provided on the aluminum compound layer and including a material that vaporizes upon its chemical reaction with fluorine; and a metal layer provided on the amorphous layer.
    Type: Grant
    Filed: February 27, 2019
    Date of Patent: April 13, 2021
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Kensei Takahashi, Takashi Asano, Satoshi Wakatsuki
  • Publication number: 20210010134
    Abstract: According to an embodiment, a semiconductor manufacturing apparatus includes a chamber, a process gas nozzle, an inert gas nozzle and a hydrogen radical nozzle. The chamber houses at least one substrate. The process gas nozzle is to release process gas toward the substrate in the chamber. The inert gas nozzle is to release inert gas toward the substrate in the chamber. The hydrogen radical nozzle is disposed in the chamber and is to generate hydrogen radicals by heating raw material gas including hydrogen and to release the generated hydrogen radicals toward the substrate during the release of the inert gas. A metal wire is in the hydrogen radical nozzle, and the metal wire includes a metal catalyst for exciting the generation of the hydrogen radicals.
    Type: Application
    Filed: September 22, 2020
    Publication date: January 14, 2021
    Applicant: Toshiba Memory Corporation
    Inventors: Fumiki Aiso, Kensei Takahashi, Tomohisa Iino
  • Patent number: 10854488
    Abstract: A wafer conveying apparatus conveying a wafer onto a supporting table in manufacturing a semiconductor. A first arm retains the wafer to move to an upper region of the supporting table, and is retracted from the upper region of the supporting table after the wafer is elevated. A second arm contacts the wafer by an opening provided in the supporting table to elevate the wafer, and lowers the wafer to place the wafer on the supporting table.
    Type: Grant
    Filed: July 26, 2019
    Date of Patent: December 1, 2020
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Fumiki Aiso, Ryota Fujitsuka, Kensei Takahashi, Takayuki Matsui, Tomohisa Iino
  • Patent number: 10669621
    Abstract: According to the embodiment, a vaporization system includes a vaporizer, a body, a sensor, a moving mechanism, and a supplier. The vaporizer includes a plurality of containers which can store powdered solid materials. The body in a vacuum state can house the vaporizer. The sensor detects a residue of the solid materials stored in a plurality of the containers respectively. The moving mechanism, on the basis of a detection result of the sensor, moves the plurality of the containers respectively between a first position located inside the vaporizer, and a second position located outside of the vaporizer. A supplier supplies the solid material to the container located in the second position among the plurality of the containers.
    Type: Grant
    Filed: February 13, 2017
    Date of Patent: June 2, 2020
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Fumiki Aiso, Hajime Nagano, Kensei Takahashi, Tomohisa Iino
  • Publication number: 20200066750
    Abstract: A semiconductor storage device includes a semiconductor substrate; an insulating layer provided on the semiconductor substrate; a barrier metal layer provided on the insulating layer; an aluminum compound layer provided on the barrier metal layer; an amorphous layer provided on the aluminum compound layer and including a material that vaporizes upon its chemical reaction with fluorine; and a metal layer provided on the amorphous layer.
    Type: Application
    Filed: February 27, 2019
    Publication date: February 27, 2020
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Kensei TAKAHASHI, Takashi ASANO, Satoshi WAKATSUKI
  • Publication number: 20190348314
    Abstract: In one embodiment, a semiconductor manufacturing apparatus includes a container to contain wafers, and supporting tables provided in the container so as to be stacked on one another, and each including a supporting face that comes into contact with a wafer to support the wafer. The apparatus further includes supporting columns to join the supporting tables together and provided at positions where the supporting columns are contained inside outer circumferences of the supporting tables. The apparatus further includes a gas feeder to feed a gas to the wafers on the supporting tables, and a gas discharger to discharge the gas fed to the wafers on the supporting tables. Each of the supporting tables includes a first upper face as the supporting face, and a second upper face provided so as to surround the first upper face at a level higher than a level of the first upper face.
    Type: Application
    Filed: July 26, 2019
    Publication date: November 14, 2019
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Fumiki AISO, Ryota Fujitsuka, Kensei Takahashi, Takayuki Matsui, Tomohisa Iino
  • Patent number: 10403531
    Abstract: In one embodiment, a semiconductor manufacturing apparatus includes a container to contain wafers, and supporting tables provided in the container so as to be stacked on one another, and each including a supporting face that comes into contact with a wafer to support the wafer. The apparatus further includes supporting columns to join the supporting tables together and provided at positions where the supporting columns are contained inside outer circumferences of the supporting tables. The apparatus further includes a gas feeder to feed a gas to the wafers on the supporting tables, and a gas discharger to discharge the gas fed to the wafers on the supporting tables. Each of the supporting tables includes a first upper face as the supporting face, and a second upper face provided so as to surround the first upper face at a level higher than a level of the first upper face.
    Type: Grant
    Filed: March 8, 2018
    Date of Patent: September 3, 2019
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Fumiki Aiso, Ryota Fujitsuka, Kensei Takahashi, Takayuki Matsui, Tomohisa Iino
  • Patent number: 10355006
    Abstract: A semiconductor storage device according to an embodiment includes a plurality of memory cells, a first film, and a second film. The memory cells are placed at intervals in a first direction on a semiconductor substrate. The first film is placed continuously in the first direction above the memory cells so as to cover all of the memory cells and including mainly metal oxide. The second film is placed on the first film and including mainly silicon nitride or silicon dioxide.
    Type: Grant
    Filed: January 19, 2016
    Date of Patent: July 16, 2019
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Ryota Fujitsuka, Nobuhito Kuge, Kensei Takahashi
  • Publication number: 20190071771
    Abstract: According to an embodiment, a semiconductor manufacturing apparatus includes a chamber, a process gas nozzle, an inert gas nozzle and a hydrogen radical nozzle. The chamber houses at least one substrate. The process gas nozzle is to release process gas toward the substrate in the chamber. The inert gas nozzle is to release inert gas toward the substrate in the chamber. The hydrogen radical nozzle is disposed in the chamber and is to generate hydrogen radicals by heating raw material gas including hydrogen and to release the generated hydrogen radicals toward the substrate during the release of the inert gas. A metal wire is in the hydrogen radical nozzle, and the metal wire includes a metal catalyst for exciting the generation of the hydrogen radicals.
    Type: Application
    Filed: March 13, 2018
    Publication date: March 7, 2019
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Fumiki AISO, Kensei TAKAHASHI, Tomohisa IINO
  • Publication number: 20190067066
    Abstract: In one embodiment, a semiconductor manufacturing apparatus includes a container to contain wafers, and supporting tables provided in the container so as to be stacked on one another, and each including a supporting face that comes into contact with a wafer to support the wafer. The apparatus further includes supporting columns to join the supporting tables together and provided at positions where the supporting columns are contained inside outer circumferences of the supporting tables. The apparatus further includes a gas feeder to feed a gas to the wafers on the supporting tables, and a gas discharger to discharge the gas fed to the wafers on the supporting tables. Each of the supporting tables includes a first upper face as the supporting face, and a second upper face provided so as to surround the first upper face at a level higher than a level of the first upper face.
    Type: Application
    Filed: March 8, 2018
    Publication date: February 28, 2019
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Fumiki AISO, Ryota FUJITSUKA, Kensei TAKAHASHI, Takayuki MATSUI, Tomohisa IINO
  • Publication number: 20180057926
    Abstract: According to the embodiment, a vaporization system includes a vaporizer, a body, a sensor, a moving mechanism, and a supplier. The vaporizer includes a plurality of containers which can store powdered solid materials. The body in a vacuum state can house the vaporizer. The sensor detects a residue of the solid materials stored in a plurality of the containers respectively. The moving mechanism, on the basis of a detection result of the sensor, moves the plurality of the containers respectively between a first position located inside the vaporizer, and a second position located outside of the vaporizer. A supplier supplies the solid material to the container located in the second position among the plurality of the containers.
    Type: Application
    Filed: February 13, 2017
    Publication date: March 1, 2018
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Fumiki AISO, Hajime NAGANO, Kensei TAKAHASHI, Tomohisa llNO
  • Publication number: 20170069534
    Abstract: A semiconductor storage device according to an embodiment includes a plurality of memory cells, a first film, and a second film. The memory cells are placed at intervals in a first direction on a semiconductor substrate. The first film is placed continuously in the first direction above the memory cells so as to cover all of the memory cells and including mainly metal oxide. The second film is placed on the first film and including mainly silicon nitride or silicon dioxide.
    Type: Application
    Filed: January 19, 2016
    Publication date: March 9, 2017
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Ryota FUJITSUKA, Nobuhito KUGE, Kensei TAKAHASHI
  • Publication number: 20160208382
    Abstract: A semiconductor manufacturing apparatus according to an embodiment includes a reaction chamber that is capable of housing a semiconductor substrate and is capable of forming a deposited film on a surface of the semiconductor substrate. A first container stores a source of the deposited film. A second container stores a source gas generated in the first container, and supplies the source gas to the reaction chamber. A first pipe connects the first container and the second container. A second pipe supplies an inert gas to the second container.
    Type: Application
    Filed: July 29, 2015
    Publication date: July 21, 2016
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Kensei Takahashi, Kazuhiro Matsuo, Fumiki Aiso
  • Patent number: 9224874
    Abstract: A semiconductor storage device according to the present embodiment includes a semiconductor substrate. A tunnel insulating film is provided on the semiconductor substrate. A charge accumulation layer is provided on the tunnel insulating film. An intermediate dielectric film is provided on the charge accumulation layer. A control gate electrode is formed on the intermediate dielectric film. The intermediate dielectric film includes a laminated film of silicon oxide films of multiple layers and silicon nitride films of at least one layer, and a silicon oxynitride film provided between adjacent ones of the silicon oxide films and the silicon nitride films.
    Type: Grant
    Filed: March 7, 2014
    Date of Patent: December 29, 2015
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Kazuhiro Matsuo, Masayuki Tanaka, Masao Shingu, Kensei Takahashi, Fumiki Aiso
  • Publication number: 20150255482
    Abstract: A semiconductor storage device according to an embodiment includes a semiconductor layer. A tunnel dielectric film is formed on the semiconductor layer. A charge accumulation layer is formed on the tunnel dielectric film. A block film is formed on the charge accumulation layer. A control gate is formed on the block film. The block film includes a metal oxide film containing nitrogen in a concentration range equal to or lower than 5×1021 atoms/cm3 and consisting mainly of aluminum.
    Type: Application
    Filed: June 20, 2014
    Publication date: September 10, 2015
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Kensei TAKAHASHI, Kazuhiro Matsuo, Fumiki Aiso, Masao Shingu, Masayuki Tanaka
  • Publication number: 20150200307
    Abstract: A semiconductor storage device according to the present embodiment includes a semiconductor substrate. A tunnel insulating film is provided on the semiconductor substrate. A charge accumulation layer is provided on the tunnel insulating film. An intermediate dielectric film is provided on the charge accumulation layer. A control gate electrode is formed on the intermediate dielectric film. The intermediate dielectric film includes a laminated film of silicon oxide films of multiple layers and silicon nitride films of at least one layer, and a silicon oxynitride film provided between adjacent ones of the silicon oxide films and the silicon nitride films.
    Type: Application
    Filed: March 7, 2014
    Publication date: July 16, 2015
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: KAZUHIRO MATSUO, MASAYUKI TANAKA, MASAO SHINGU, KENSEI TAKAHASHI, FUMIKI AISO