Abstract: A color converting molding material and a light emitting device having the color converting molding material are discussed.

Abstract: A light emitting device accoridng to an emboidment includes a first light emitting component including a semiconductor layer that is doped with an impurity, the first light emitting component emitting light in a blue region; a second light emitting component including a light-emitting semiconductor layer that emits light in a red region; and a phosphor capable of absorbing a part of the light emitted by the first light emitting component, and emitting light in a yellow region. The phosphor is not substantially excited by the light from the second light emitting component. The light emitting device is capable of emitting red/white light.

Abstract: A light emittng device according to one aspect of the present invention includes a first light emitting component including a light-emitting semiconductor layer that emits light in a blue region, a second light emitting component including a light-emitting semiconductor layer that emits light in a red region, and a phosphor capable of absorbing a part of light emitted by the first light emitting component and emitting light in a yellow region.

Abstract: A light source having a planar main surface capable of emitting a white light includes a blue LED, an optical guide plate having a planar main surface and an edge face receiving injection of the light from the blue LED, and a coating material of transparent resin or glass containing fluorescent materials positioned between the blue LED and the optical guide plate. The fluorescent materials can be exited by absorption of a part of the blue light from the blue LED to emit fluorescent light and the fluorescent light can be mixed with a remaining part of the blue light to make white light in the optical guide plate.

Abstract: A semiconductor apparatus according to the present invention comprises a support member that has a recessed portion, one pair of positive and negative conductive wiring members that are provided on the support member, a semiconductor device that is electrically connected to the conductive wiring members and is disposed in the recessed portion, and a coating member that seals at least the semiconductor device. Side walls of the recessed portion has a first side wall 105 that surrounds the semiconductor device 103, and the second side wall 106 that protrudes from the first side wall. At least a first wall surface 106a in the bottom side of the recessed portion in wall surfaces of the second side wall 106 is coated with a metallic material. Consequently, a highly reliable semiconductor apparatus with improved light-outgoing efficiency is provided.

Abstract: A light emitting device includes a light emitting component having an active layer of a semiconductor and a phosphor capable of absorbing a part of light emitted from the light emitting component and emitting light of wavelength different from that of the absorbed light, wherein the light emitting component is a LED which has an active layer constituting a gallium nitride based semiconductor containing Indium and is capable of emitting a blue color light with a peak wavelength within the range from 420 to 490 nm. The phosphor is a garnet fluorescent material activated with cerium which is capable of absorbing a part of the blue color light and thereby emitting light having a broad emission spectrum with a peak wavelength existing around the range from 510 to 600 nm and a tail continuing into the region from 700 to 750 nm.

Abstract: A light emitting device accoridng to an emboidment includes a first light emitting component including a semiconductor layer that is doped with an impurity, the first light emitting component emitting light in a blue region; a second light emitting component including a light-emitting semiconductor layer that emits light in a red region; and a phosphor capable of absorbing a part of the light emitted by the first light emitting component, and emitting light in a yellow region. The phosphor is not substantially excited by the light from the second light emitting component. The light emitting device is capable of emitting red/white light.

Abstract: A light emitting diode comprising an LED chip having a light emitting layer made of a nitride compound semiconductor and a light transmitting resin that includes a fluorescent material which absorbs at least a part of light emitted by the LED chip and emits light of a different wavelength, wherein the fluorescent material includes a fluorescent particles of small particle size and a fluorescent particles of large particle size, the fluorescent particles of large particle size being distributed in the vicinity of the LED chip in the light transmitting resin to form a wavelength converting layer, the fluorescent particles of small particle size being distributed on the outside of the wavelength converting layer in the light transmitting resin.

Abstract: A light emitting diode comprising an LED chip having a light emitting layer made of a nitride compound semiconductor and a light transmitting resin that includes a fluorescent material which absorbs at least a part of light emitted by the LED chip and emits light of a different wavelength, wherein the fluorescent material includes a fluorescent particles of small particle size and a fluorescent particles of large particle size, the fluorescent particles of large particle size being distributed in the vicinity of the LED chip in the light transmitting resin to form a wavelength converting layer, the fluorescent particles of small particle size being distributed on the outside of the wavelength converting layer in the light transmitting resin.

Abstract: A semiconductor device comprising the semiconductor element and the support body made of a stack of ceramics layers having a recess in which a electrical conductors are electrically connected with the semiconductor element, wherein at least a part of the top face of the recess side wall is covered by a resin, thereby providing a light emitting device of high reliability.

Abstract: A light emitting device includes a first light emitting component including a light-emitting semiconductor layer that emits light in blue region, a second light emitting component including a light-emitting semiconductor layer that emits light in red region, and a phosphor capable of absorbing a part of light emitted by the first light emitting component and emitting light in yellow region.

Abstract: The white light emitting diode comprising a light emitting component using a semiconductor as a light emitting layer and a phosphor which absorbs a part of light emitted by the light emitting component and emits light of wavelength different from that of the absorbed light, wherein the light emitting layer of the light emitting component is a nitride compound semiconductor and the phosphor contains garnet fluorescent material activated with cerium. which contains at least one element selected from the group consisting of Y, Lu, Sc, La, Gd and Sm, and at least one element selected from the group consisting of Al, Ga and In and, and is subject to less deterioration of emission characteristic even when used with high luminance for a long period of time.

Abstract: The white light emitting diode comprising a light emitting component using a semiconductor as a light emitting layer and a phosphor which absorbs a part of light emitted by the light emitting component and emits light of wavelength different from that of the absorbed light, wherein the light emitting layer of the light emitting component is a nitride compound semiconductor and the phosphor contains garnet fluorescent material activated with cerium which contains at least one element selected from the group consisting of Y, Lu, Sc, La, Gd and Sm, and at least one element selected from the group consisting of Al, Ga and In and, and is subject to less deterioration of emission characteristic even when used with high luminance for a long period of time.

Abstract: The white light emitting diode comprising a light emitting component using a semiconductor as a light emitting layer and a phosphor which absorbs a part of light emitted by the light emitting component and emits light of wavelength different from that of the absorbed light, wherein the light emitting layer of the light emitting component is a nitride compound semiconductor and the phosphor contains garnet fluorescent material activated with cerium which contains at least one element selected from the group consisting of Y, Lu, Sc, La, Gd and Sm, and at least one element selected from the group consisting of Al, Ga and In and, and is subject to less deterioration of emission characteristic even when used with high luminance for a long period of time.

Abstract: The white light emitting diode comprising a light emitting component using a semiconductor as a light emitting layer and a phosphor which absorbs a part of light emitted by the light emitting component and emits light of wavelength different from that of the absorbed light, wherein the light emitting layer of the light emitting component is a nitride compound semiconductor and the phosphor contains garnet fluorescent material activated with cerium which contains at least one element selected from the group consisting of Y, Lu, Sc, La, Gd and Sm, and at least one element selected from the group consisting of Al, Ga and In and, and is subject to less deterioration of emission characteristic even when used with high luminance for a long period of time.

Abstract: The white light emitting diode comprising a light emitting component using a semiconductor as a light emitting layer and a phosphor which absorbs a part of light emitted by the light emitting component and emits light of wavelength different from that of the absorbed light, wherein the light emitting layer of the light emitting component is a nitride compound semiconductor and the phosphor contains garnet fluorescent material activated with cerium which contains at least one element selected from the group consisting of Y, Lu, Sc, La, Gd and Sm, and at least one element selected from the group consisting of Al, Ga and In and, and is subject to less deterioration of emission characteristic even when used with high luminance for a long period of time.

Abstract: A light emitting diode comprising an LED chip having a light emitting layer made of a nitride compound semiconductor and a light transmitting resin that includes a fluorescent material which absorbs at least a part of light emitted by the LED chip and emits light of a different wavelength, wherein the fluorescent material includes a fluorescent particles of small particle size and a fluorescent particles of large particle size, the fluorescent particles of large particle size being distributed in the vicinity of the LED chip in the light transmitting resin to form a wavelength converting layer, the fluorescent particles of small particle size being distributed on the outside of the wavelength converting layer in the light transmitting resin.

Abstract: The white light emitting diode comprising a light emitting component using a semiconductor as a light emitting layer and a phosphor which absorbs a part of light emitted by the light emitting component and emits light of wavelength different from that of the absorbed light, wherein the light emitting layer of the light emitting component is a nitride compound semiconductor and the phosphor contains garnet fluorescent material activated with cerium which contains at least one element selected from the group consisting of Y, Lu, Sc, La, Gd and Sm, and at least one element selected from the group consisting of Al, Ga and In and, and is subject to less deterioration of emission characteristic even when used with high luminance for a long period of time.

Abstract: The white light emitting diode comprising a light emitting component using a semiconductor as a light emitting layer and a phosphor which absorbs a part of light emitted by the light emitting component and emits light of wavelength different from that of the absorbed light, wherein the light emitting layer of the light emitting component is a nitride compound semiconductor and the phosphor contains garnet fluorescent material activated with cerium which contains at least one element selected from the group consisting of Y, Lu, Sc, La, Gd and Sm, and at least one element selected from the group consisting of Al, Ga and In and, and is subject to less deterioration of emission characteristic even when used with high luminance for a long period of time.

Abstract: The white light emitting diode comprising a light emitting component using a semiconductor as a light emitting layer and a phosphor which absorbs a part of light emitted by the light emitting component and emits light of wavelength different from that of the absorbed light, wherein the light emitting layer of the light emitting component is a nitride compound semiconductor and the phosphor contains garnet fluorescent material activated with cerium which contains at least one element selected from the group consisting of Y, Lu, Sc, La, Gd and Sm, and at least one element selected from the group consisting of Al, Ga and In and, and is subject to less deterioration of emission characteristic even when used with high luminance for a long period of time.