Abstract: A present disclosure relates to a metallic film manufacturing method including a first step of forming a layer which has functional groups ion-exchangeable with metal ions on a surface of a resin substrate made of an insulating material, a second step of treating the resin substrate having the layer with a metal ion solution such that metal ions are introduced into the layer by ion exchange, and a third step of treating the resin substrate with a reducing agent such that metal particles are precipitated on a surface of the layer. The present disclosure relates to a metallic film manufacturing method a metallic film in which there are voids between metal particles precipitated on a surface of the metallic film, and the average particle diameter of the metal particles is 5 nm to 200 nm.

Abstract: A method of producing silver nanoparticles includes reducing, with a silver ion reducing agent, silver ions of 40 mM or more in a reaction solution in the presence of a particle protective agent and an element more noble than silver.

Abstract: A nickel solution for forming a film that can suppress generation of hydrogen gas between a solid electrolyte membrane and a substrate while the solid electrolyte membrane and the substrate are brought into contact with each other. The pH of the nickel solution for forming a film is in the range of 4.2 to 6.1. The nickel solution for forming a film further contains a pH buffer solution that has a buffer function in the range of the pH and does not form insoluble salts or complexes with the nickel ions during formation of the film.

Abstract: A method of producing metal nanoparticles includes: dissolving an organic metal compound in a non-polar solvent, and mixing a polar solvent with the non-polar solvent to prepare a mixed liquid such that the polar solvent accounts for 5 volume % to 67 volume % of all solvents contained in the mixed liquid; and decomposing the organic metal compound by irradiating the prepared mixed liquid with a microwave, to produce metal nanoparticles. The organic metal compound includes: a non-polar group that is transparent to the microwave and that makes the organic metal compound soluble in the non-polar solvent; and a polar group that is disposed on a site of the organic metal compound, where a metal atom is present, and that absorbs the microwave.

Abstract: A method of producing plate-shaped silver nanoparticles includes: preparing a mixed liquid by adding, to a solution containing silver ions, a reducing agent having a standard electrode potential within a range from 0.03 V to 0.8 V and polyvinylpyrrolidone having a weight-average molecular weight of 10000 to 40000; and precipitating silver from the silver ions by irradiating the mixed liquid with a microwave.

Abstract: A method of producing a homogenous skutterudite compound, CoSb3, having a crystallite diameter of 100 nm or less, by a convenient synthesis process, which is a method of producing CoSb3, comprising reducing Co2+ and Sb3+ to Co0 and Sb0, respectively, in a solution including a Co-containing compound and an Sb-containing compound using a reducing agent, wherein supplied amount of the Co-containing compound and the Sb-containing compound are adjusted in order to set a ratio of a reduction rate of Co2+ to Co0 to a reduction rate of Sb3+ to Sb0 to 1:2.9 to 1:3.1.

Abstract: Provided is a nickel solution for forming a film that can suppress generation of hydrogen gas between a solid electrolyte membrane and a substrate while the solid electrolyte membrane and the substrate are brought into contact with each other. Specifically, provided is a nickel solution for forming a film, the nickel solution being adapted to, when disposing a solid electrolyte membrane between an anode and a substrate that functions as a cathode, bringing the solid electrolyte membrane into contact with the substrate and applying a voltage across the anode and the substrate so as to deposit nickel onto a surface of the substrate from nickel ions contained in the solid electrolyte membrane, thereby forming a nickel film containing the nickel on the surface of the substrate, supply the nickel ions to the solid electrolyte membrane. The pH of the nickel solution for forming a film is in the range of 4.2 to 6.1.

Abstract: An environmental chamber includes a testing tub in which a testing space is formed. The testing tub has a front wall, a left sidewall, a right sidewall, a rear wall, and a ceiling part, and is divided into a lower tub part and an upper tub part by a dividing surface extended in a direction inclined downwardly and frontwardly. The left and right sidewalls are respectively divided into two portions by the dividing surface. An inner surface of the upper tub part includes at least a part of an inner surface of each of the ceiling part, the front wall, the left sidewall, and the right sidewall. The upper tub part is supported by the lower tub part to be able to open the testing space.

Abstract: A film-forming metal solution for supplying metal ions to a solid electrolyte membrane in film formation is provided. In the film formation, the solid electrolyte membrane is disposed between an anode and a substrate as a cathode, and the solid electrolyte membrane is brought into contact with the substrate and a voltage is placed between the anode and the substrate to precipitate a metal on a surface of the substrate from the metal ions contained in the solid electrolyte membrane, so that a metal film of the metal is formed on the surface of the substrate. The film-forming metal solution contains a solvent, and the metal dissolved in the solvent in an ionic state. A hydrogen ion concentration of the film-forming metal solution is within a range of 0 to 10?7.85 mol/L at 25° C.

Abstract: An environmental chamber includes a testing tub in which a testing space is formed. The testing tub has a front wall, a left sidewall, a right sidewall, a rear wall, and a ceiling part, and is divided into a lower tub part and an upper tub part by a dividing surface extended in a direction inclined downwardly and frontwardly. The left and right sidewalls are respectively divided into two portions by the dividing surface. An inner surface of the upper tub part includes at least a part of an inner surface of each of the ceiling part, the front wall, the left sidewall, and the right sidewall. The upper tub part is supported by the lower tub part to be able to open the testing space.

Abstract: According to the present invention, a circuit board having a further-microfabricated circuit pattern that can be manufactured in further simplified steps is obtained. For such purpose, a mold 10, which has protrusions 11 formed in a pattern corresponding to a circuit pattern, is used to apply a conductive material layer (metal paste) 13 to head portions of the protrusions 11 of the mold 10. The mold is heat- and pressure-welded to the surface of a substrate 20 that is made of a resin film or the like. Accordingly, a pattern comprising the protrusions 11 and the conductive material layer (metal paste) 13 are transferred to the substrate 20. After transfer, the resin substrate (resin molding 30) is immersed in a copper sulfate plating bath for electrolytic plating treatment. Copper ions in the plating bath were deposited inside each recess 31 while the conductive material layer 13 is used as a base material for the formation of a metal wiring 32.

Abstract: According to the present invention, a circuit board having a further-microfabricated circuit pattern that can be manufactured in further simplified steps is obtained. For such purpose, a mold 10, which has protrusions 11 formed in a pattern corresponding to a circuit pattern, is used to apply a conductive material layer (metal paste) 13 to head portions of the protrusions 11 of the mold 10. The mold is heat- and pressure-welded to the surface of a substrate 20 that is made of a resin film or the like. Accordingly, a pattern comprising the protrusions 11 and the conductive material layer (metal paste) 13 are transferred to the substrate 20. After transfer, the resin substrate (resin molding 30) is immersed in a copper sulfate plating bath for electrolytic plating treatment. Copper ions in the plating bath were deposited inside each recess 31 while the conductive material layer 13 is used as a base material for the formation of a metal wiring 32.

Abstract: The present invention provides a method for producing a polyamic acid containing ultrafine metal particles, which contains the steps of contacting an aqueous solution containing a water-soluble metal compound with fine polyamic acid particles to adsorb metal ions to the fine polyamic acid particles, and then performing a reduction treatment; and a conductive adhesive which contains as an active ingredient the polyamic acid containing ultrafine metal particles. The conductive adhesive of the present invention has excellent performance which enables the adhesive to be used as an alternative to high-temperature lead solders.

Abstract: The present invention provides a process for producing a metal nanoparticle composite film, which is capable of independently controlling the particle diameter and the volume filling ratio of metal nanoparticles in the metal nanoparticle composite film. The process comprises the steps of (a) treating a polyimide resin film with an alkali aqueous solution to thereby introduce a carboxyl group, (b) bringing the resin film into contact with a solution containing metal ions, to thereby dope the metal ions in the resin film, and (c) performing thermal reduction treatment in a reducing gas, thereby producing the metal nanoparticle composite film containing the metal nanoparticles dispersed in the polyimide resin film, wherein the volume filling ratio of the metal nanoparticles in the composite film is controlled by regulating the thickness of a nanoparticle dispersed layer formed in the polyimide resin film with the thermal reduction treatment in the reducing gas in the step (c).

Abstract: The present invention provides 1. A method for forming an inorganic thin film pattern on a polyimide resin, which has: (1) a step of forming an alkali-resistant protective film having a thickness of 0.01 to 10 ?m on a surface of a polyimide resin; (2) a step of removing the alkali-resistant protective film and a superficial portion of the polyimide resin at the site where an inorganic thin film pattern is formed to form a concave part; (3) a step of contacting an alkaline aqueous solution to the polyimide resin in the concave part to cleave an imide ring of the polyimide resin so as to produce a carboxyl group whereby a polyimide resin having the carboxyl group is formed; (4) a step of contacting a solution containing a metal ion to the polyimide resin having the carboxyl group so as to produce a metal salt of the carboxyl group; and (5) a step of separating the metal salt as a metal, a metal oxide or a semiconductor on the surface of the polyimide resin so as to form the inorganic thin film pattern.

Abstract: The present invention provides a method for forming an inorganic thin film on a polyimide resin, which includes: (1) a step of applying an alkaline aqueous solution on a polyimide resin at the site where an inorganic thin film is formed to cleave an imide ring of the polyimide resin so as to produce a carboxyl group and to reform the polyimide resin to a polyamic acid whereby a reformed portion including the polyamic acid having the carboxyl group is formed; (2) a step of contacting a solvent in which the polyamic acid is soluble to the reformed portion to remove a part of the reformed portion so as to form a concave part; (3) a step of contacting a solution containing a metal ion to the reformed portion, which is near the concave part, so as to produce a metal salt of the carboxyl group; and (4) a step of separating the metal salt as a metal, a metal oxide or a semiconductor on the surface of the polyimide resin so as to form the inorganic thin film.

Abstract: The present invention provides a method for forming a protective film selectively on metal interconnects, such as copper interconnects, of a substrate having an embedded interconnect structure, without causing the problem of contamination of the interconnects with an-alkali metal. The method for forming a protective film according to the present invention comprises: providing a substrate having embedded interconnects formed in a surface of the substrate; and bringing the surface of the substrate into contact with an electroless plating bath, thereby forming a protective film having a film thickness of 0.1 to 500 nm selectively on the exposed surface of the embedded interconnects; wherein the electroless plating bath contains cobalt ions, phosphinate ions and a complexing agent, uses cobalt phosphinate as a main supply source of the cobalt ions and the phosphinate ions, and does not substantially contain alkali metal ions.