Abstract: According to one embodiment, a method for manufacturing a reflective mask includes: forming a reflection layer on a major surface of a substrate; forming a capping layer containing ruthenium on the reflection layer; forming an absorption layer on the capping layer; forming a pattern region in the absorption layer; removing a first resist mask used in forming the pattern region; and forming a light blocking region surrounding the pattern region in the absorption layer, the capping layer, and the reflection layer. The removing the first resist mask used in forming the pattern region includes: performing dry ashing processing using a mixed gas of ammonia gas and nitrogen gas or only ammonia gas.

Abstract: According to one embodiment, a plasma processing apparatus includes: a processing chamber; a decompression section configured to decompress inside of the processing chamber; a member including a control section to be inserted into a depression provided on mounting side of a workpiece, the control section being configured to thereby control at least one of in-plane distribution of capacitance of a region including the workpiece and in-plane distribution of temperature of the workpiece; a mounting section provided inside the processing chamber; a plasma generating section configured to supply electromagnetic energy to a region for generating a plasma for performing plasma processing on the workpiece; and a gas supply section configured to supply a process gas to the region for generating a plasma. The control section performs control so that at least one of the in-plane distribution of capacitance and the in-plane distribution of temperature is made uniform.