Patents by Inventor Kensuke HAGA

Kensuke HAGA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200185237
    Abstract: There is provided a technique that includes: etching a portion of a first film formed on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including: supplying an etching gas into a process chamber while raising an internal pressure of the process chamber in a state in which the substrate having the first film formed on the surface of the substrate is accommodated in the process chamber; and lowering the internal pressure of the process chamber by exhausting an interior of the process chamber in a state in which supply of the etching gas into the process chamber is stopped.
    Type: Application
    Filed: February 13, 2020
    Publication date: June 11, 2020
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Kensuke HAGA, Atsushi MORIYA, Naoharu NAKAISO, Takahiro MIYAKURA
  • Patent number: 10529560
    Abstract: There is provided a technique that includes (a) pre-etching a surface of a substrate made of single crystal silicon by supplying a first etching gas to the substrate; (b) forming a silicon film on the substrate with the pre-etched surface, by supplying a first silicon-containing gas to the substrate; (c) etching a portion of the silicon film by supplying a second etching gas, which has a different molecular structure from a molecular structure of the first etching gas, to the substrate; and (d) forming an additional silicon film on the etched silicon film by supplying a second silicon-containing gas to the substrate.
    Type: Grant
    Filed: March 20, 2018
    Date of Patent: January 7, 2020
    Assignee: Kokusai Electric Corporation
    Inventors: Takahiro Miyakura, Atsushi Moriya, Naoharu Nakaiso, Kensuke Haga
  • Publication number: 20190386548
    Abstract: Provided is an IPM motor that is strong and has high output. An IPM motor has a rotor that includes a rotor core as a laminate of a plurality of metal foil pieces made of a soft magnetic material that are stacked in a direction of a rotation axis of the rotor. The rotor core has a plurality of through-holes that penetrates through the rotor core in the direction of the rotation axis, the plurality of through-holes including through-holes embedding magnets. The rotor core includes inner bridges and outer bridges. At least one of the inner bridges and the outer bridges of the rotor core is made of an amorphous soft magnetic material, and other parts are made of a nanocrystal soft magnetic material.
    Type: Application
    Filed: June 5, 2019
    Publication date: December 19, 2019
    Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Fumitaka YOSHINAGA, Akira YAMASHITA, Airi KAMIMURA, Kazuaki HAGA, Kensuke KOMORI
  • Publication number: 20190267854
    Abstract: Provided is a stator for rotating electrical machine that can avoid the sagging of teeth stacked at the distal ends under the self-weight. A stator core is a laminate of metal foil members stacked in a direction of a rotation axis of the rotating electrical machine. Each tooth has a pair of side walls facing the neighboring teeth in the circumferential direction. The stator includes a pair of insulating reinforcing members so as to become a bridge between the corresponding tooth and a part of the yoke and sandwich the corresponding tooth from both sides in the direction of the rotation axis while exposing the pair of side walls; insulating fixing members, each fixing member fixing the corresponding pair of reinforcing members to the corresponding tooth while wrapping around the pair of reinforcing members and tooth; and coils formed as distributed windings at the teeth fixed with the fixing members.
    Type: Application
    Filed: February 19, 2019
    Publication date: August 29, 2019
    Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Kensuke KOMORI, Hisamitsu TOSHIDA, Kazuaki HAGA
  • Publication number: 20190181731
    Abstract: An object of the present disclosure is to provide a production method for a stator in which a breakage of the stator core can be prevented when coils are mounted thereon. The present embodiment is a production method for a stator that includes a stator core having a tooth and includes a coil wound around the tooth. The method includes: a step of preparing a stacked body which has the tooth and in which a plurality of plate-like soft magnetic materials each including an amorphous structure are stacked; a step of mounting the coil on the tooth; and a step of, after the coil is mounted, heating the stacked body to a temperature equal to or higher than a crystallization temperature of the soft magnetic materials.
    Type: Application
    Filed: November 20, 2018
    Publication date: June 13, 2019
    Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Fumitaka YOSHINAGA, Kazuaki HAGA, Kensuke KOMORI, Kiyotaka ONODERA
  • Publication number: 20190156999
    Abstract: The present disclosure provides a method for producing a magnetic component that enables efficient processing of an amorphous soft magnetic material or a nanocrystalline soft magnetic material. The method for producing a magnetic component comprising an amorphous soft magnetic material or nanocrystalline soft magnetic material comprises: a step of preparing a stacked body comprising a plurality of plate-shaped amorphous soft magnetic materials or nanocrystalline soft magnetic materials; a step of heating at least a portion of shearing in the stacked body to a temperature equal to or higher than the crystallization temperature of the soft magnetic materials; and a step of shearing the stacked body at the portion of shearing after the step of heating.
    Type: Application
    Filed: October 1, 2018
    Publication date: May 23, 2019
    Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Airi KAMIMURA, Kazuaki HAGA, Kensuke KOMORI, Katsuhiko TATEBE, Shingo FUBUKI
  • Patent number: 10262872
    Abstract: There is provided a method of manufacturing a semiconductor device. The method includes: forming a first amorphous silicon film on a substrate in a process chamber; and etching a portion of the first amorphous silicon film using a hydrogen chloride gas under a temperature at which an amorphous state of the first amorphous silicon film is maintained, in the process chamber.
    Type: Grant
    Filed: August 1, 2017
    Date of Patent: April 16, 2019
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Takahiro Miyakura, Atsushi Moriya, Naoharu Nakaiso, Kensuke Haga
  • Publication number: 20180277364
    Abstract: There is provided a technique that includes (a) pre-etching a surface of a substrate made of single crystal silicon by supplying a first etching gas to the substrate; (b) forming a silicon film on the substrate with the pre-etched surface, by supplying a first silicon-containing gas to the substrate; (c) etching a portion of the silicon film by supplying a second etching gas, which has a different molecular structure from a molecular structure of the first etching gas, to the substrate; and (d) forming an additional silicon film on the etched silicon film by supplying a second silicon-containing gas to the substrate.
    Type: Application
    Filed: March 20, 2018
    Publication date: September 27, 2018
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Takahiro MIYAKURA, Atsushi MORIYA, Naoharu NAKAISO, Kensuke HAGA
  • Publication number: 20180040475
    Abstract: There is provided a method of manufacturing a semiconductor device. The method includes: forming a first amorphous silicon film on a substrate in a process chamber; and etching a portion of the first amorphous silicon film using a hydrogen chloride gas under a temperature at which an amorphous state of the first amorphous silicon film is maintained, in the process chamber.
    Type: Application
    Filed: August 1, 2017
    Publication date: February 8, 2018
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Takahiro MIYAKURA, Atsushi MORIYA, Naoharu NAKAISO, Kensuke HAGA
  • Publication number: 20150147873
    Abstract: Provided is a method of manufacturing a semiconductor device. The method includes: carrying a substrate, which has a Ge-containing film on at least a portion of a surface thereof, into a process chamber; heating an inside of the process chamber, into which the substrate is carried, to a first process temperature; and terminating a surface of the Ge-containing film, which is exposed at a portion of the surface of the substrate, by Si by supplying at least a Si-containing gas to the inside of the process chamber heated to the first process temperature.
    Type: Application
    Filed: November 21, 2014
    Publication date: May 28, 2015
    Applicant: HITACHI KOKUSAI ELECTRIC INC
    Inventors: Atsushi MORIYA, Kensuke HAGA, Kazuhiro YUASA, Kaichiro MINAMI