Abstract: Provided is a semiconductor device formed by performing bonding at room temperature with respect to a wafer in which bonded electrodes and insulating layers and are respectively exposed to front surfaces, including a bonding interlayer which independently exhibits non-conductivity and exhibits conductivity by being bonded to the bonded electrodes, between the front surfaces.

Abstract: Provided is a substrate bonding method for bonding a first substrate (11) and a second substrate (12) by sputter-etching, the substrate bonding method comprising: an activation step in which the surface of a first substrate (11) is irradiated with a beam (2) of ion particles of a gas (1) such as Ar and sputter-etched to thereby deposit sputtered particles (Ms) from the first substrate (11) on the surface of a second substrate (12), the first substrate (11) comprising at least one among a semiconductor material, a compound semiconductor material, and a metal material; and a bonding step in which the surface of the second substrate (12), on which the sputtered particles (Ms) from the first substrate (11) are deposited, and the surface of the substrate (11), which is sputter-etched, are overlapped and bonded with each other.

Abstract: An inter-substrate material layer is formed between a first substrate and a second substrate to generate a bonding strength. A plurality of metal elements are present in the inter-substrate material layer. An interface element existence ratio of the plurality of metal elements is 0.07 or above. A device can be obtained in which substrates difficult to bond (for example, SiO2 substrates) are bonded at room-temperature to have practical bonding strength.

Abstract: Provided is a semiconductor device formed by performing bonding at room temperature with respect to a wafer in which bonded electrodes and insulating layers and are respectively exposed to front surfaces, including a bonding interlayer which independently exhibits non-conductivity and exhibits conductivity by being bonded to the bonded electrodes, between the front surfaces.

Abstract: A room-temperature bonding apparatus includes a bonding chamber, an upper-side stage mechanism to support an upper-side wafer to be movable in an upper and lower direction in the bonding chamber, and a lower-side stage mechanism configured to support a lower-side wafer in a horizontal plane in the bonding chamber. The lower-side stage mechanism includes a carriage having a lower-side wafer holding section for holding the lower-side wafer, an elastic guide connected to the carriage to support the carriage, a positioning stage for finely moving the lower-side wafer holding section, and a fine movement mechanism for finely moving a lower-side wafer holding section, and a carriage support base. The elastic guide supports the carriage elastically deforms so as for the carriage to contact the carriage support base when the upper-side wafer contacts the lower-side wafer and a load is applied to the carriage into an upper and lower direction by the upper-side stage mechanism.

Abstract: A room temperature bonding apparatus includes a first beam source, a second beam source, and a press bonding mechanism. The first beam source emits a first activation beam that irradiates a first surface of a first substrate. Independently from the first beam source, the second beam source emits a second activation beam that irradiates a second surface of a second substrate. The press bonding mechanism bonds between the first substrate and the second substrate by contacting between the first surface and the second surface after the first surface is irradiated with the first activation beam and the second surface is irradiated with the second activation beam. Thus, a plurality of the substrates made of different materials is appropriately bonded.

Abstract: A room-temperature bonding apparatus of the present invention includes: a plurality of first beam sources configured to emit a plurality of first activation beams which are irradiated to a first activation surface of a first substrate; a plurality of second beam sources configured to emit a plurality of second activation beams which are irradiated to a second activation surface of a second substrate; and a pressure welding mechanism configured to bond the first substrate and the second substrate by bring the first activation surface and the second activation surface contact, after the first activation surface and the second activation surface are irradiated.

Abstract: An inter-substrate material layer is formed between a first substrate and a second substrate to generate a bonding strength. A plurality of metal elements are present in the inter-substrate material layer. An interface element existence ratio of the plurality of metal elements is 0.07 or above. A device can be obtained in which substrates difficult to bond (for example, SiO2 substrates) are bonded at room-temperature to have practical bonding strength.

Abstract: A room-temperature bonded device has a first substrate having a first surface and a second substrate having a second surface to be bonded to the first surface. In the bonding of the first surface and the second surface, one of the first surface and the second surface contains an inorganic material such as silicon, SiO2, GaN and LiTaO3. The other of the first surface and the second surface contains an inorganic material such as silicon, SiO2, quartz and Au. The inorganic materials of the first surface and the second surface may be same or may be different.

Abstract: A room temperature bonding apparatus includes a first beam source, a second beam source, and a press bonding mechanism. The first beam source emits a first activation beam that irradiates a first surface of a first substrate. Independently from the first beam source, the second beam source emits a second activation beam that irradiates a second surface of a second substrate. The press bonding mechanism bonds between the first substrate and the second substrate by contacting between the first surface and the second surface after the first surface is irradiated with the first activation beam and the second surface is irradiated with the second activation beam. Thus, a plurality of the substrates made of different materials is appropriately bonded.

Abstract: A wafer bonding method includes: holding a first substrate with an upper holding mechanism 7 by applying a voltage to the upper holding mechanism 7; generating a bonded substrate by bonding the first substrate and a second substrate held with a lower holding mechanism 8; and dechucking the bonded substrate from the upper holding mechanism 7 after a voltage which attenuates while alternating is applied to the upper holding mechanism 7. By applying the voltage which attenuates while alternating to the upper holding mechanism 7, residual attracting force between the bonded substrate and the upper holding mechanism 7 is reduced, thereby enabling the bonded substrate to be dechucked from the holding mechanism more surely in a shorter time period. As a result, the first substrate and the second substrate can be bonded in a shorter time period.

Abstract: A room-temperature bonding apparatus includes a vacuum chamber; a first holding mechanism; a second holding mechanism; a beam source; and a pressure bonding mechanism which bonds first and second substrates. At least one of the above members is formed of a first material which is difficult to be sputtered or which does not obstruct a function of a device obtained by bonding the first and second substrates even if the first material is in the bonding surfaces, or a surface of the at least one is covered with the first material.

Abstract: A multi-layer bonding method of the present invention includes: forming a first bonded substrate by bonding a first substrate and an intermediate substrate in a bonding chamber; conveying a second substrate inside said bonding chamber when said first bonded substrate is arranged inside said bonding chamber; and forming a second bonded substrate by bonding said first bonded substrate and said second substrate in said bonding chamber. According to such a multi-layer bonding method, the upper-side substrate can be bonded with an intermediate substrate and then a first bonded substrate is bonded with a lower-side substrate without taking out the first bonded substrate from the bonding chamber. For this reason, a second bonded substrate can be produced at high speed and at a low cost.

Abstract: A multi-layer bonding method of the present invention includes: forming a first bonded substrate by bonding a first substrate and an intermediate substrate in a bonding chamber; conveying a second substrate inside said bonding chamber when said first bonded substrate is arranged inside said bonding chamber; and forming a second bonded substrate by bonding said first bonded substrate and said second substrate in said bonding chamber. According to such a multi-layer bonding method, the upper-side substrate can be bonded with an intermediate substrate and then a first bonded substrate is bonded with a lower-side substrate without taking out the first bonded substrate from the bonding chamber. For this reason, a second bonded substrate can be produced at high speed and at a low cost.

Abstract: A room temperature bonding apparatus includes angle adjustment means supporting a first sample stage holding a first substrate so as to be able to change a direction of the first sample stage; a first driving device driving the first stage in a first direction; a second driving device driving a second sample stage holding a second substrate in a second direction not parallel to the first direction; and a carriage support table supporting the second sample stage in the first direction when the second substrate and the first substrate are brought into contact. The apparatus can impose a load exceeding a withstand load of the second driving device on the first and second substrates. Further, the apparatus uses angle adjustment means to change direction of the first substrate to be parallel with the second substrate and uniformly impose the larger load on a bonding surface.

Abstract: A room temperature bonding machine is provided with an evacuation apparatus, a gas supply apparatus, a pressure gauge, a cleaner apparatus, a pressure controller and a pressing mechanism. The evacuation apparatus evacuates gas from the chamber. The gas supply apparatus supplies introduction gas into the chamber. The pressure gauge measures the pressure in the chamber. The cleaner apparatus cleans first and second substrates in the chamber when said pressure is at a predetermined degree of vacuum. The pressure controller controls both of the evacuation apparatus and the gas supply apparatus so that the pressure is regulated to a target pressure. The pressing mechanism presses and bonds the first and second substrates when the pressure is set to said target pressure.

Abstract: A device is provided with: a first substrate mainly containing silicon dioxide; a second substrate mainly containing silicon, compound semiconductor, silicon dioxide or fluoride; and a bonding functional intermediate layer arranged between the first substrate and the second substrate. The first substrate is bonded to the second substrate thorough room temperature bonding in which a sputtered first surface of the first substrate is contacted with a sputtered second surface of the second substrate via the bonding functional intermediate layer. Here, the material of the bonding functional intermediate layer is selected from among optically transparent materials which are oxide, fluoride, or nitride, the materials being different from the main component of the first substrate and different from the main component of the second substrate.

Abstract: A room temperature bonding apparatus according to the present invention is provided with a load lock chamber having an internal space which is pressure-reduced; and a cartridge arranged in the load lock chamber. The cartridge includes an island portion formed to contact a substrate when the substrate is put on the cartridge. A flow passage is formed for the island portion to connect a space between the cartridge and the substrate to outside when the substrate is put on the cartridge. Therefore, in the room temperature bonding apparatus can prevent making the substrate is moved to the cartridge due to gas when the internal space is pressure-reduced.

Abstract: A room temperature bonding apparatus includes: an angle adjustment mechanism that supports a first sample stage holding a first substrate to a first stage so as to be able to change a direction of the first sample stage; a first driving device that drives the first stage in a first direction; a second driving device that drives a second sample stage holding a second substrate in a second direction not parallel to the first direction; and a carriage support table that supports the second sample stage in the first direction when the second substrate and the first substrate are brought into press contact with each other. In this case, the room temperature bonding apparatus can impose a larger load exceeding a withstand load of the second driving device on the first substrate and the second substrate.

Abstract: A room-temperature bonding apparatus of the present invention includes: a plurality of first beam sources configured to emit a plurality of first activation beams which are irradiated to a first activation surface of a first substrate; a plurality of second beam sources configured to emit a plurality of second activation beams which are irradiated to a second activation surface of a second substrate; and a pressure welding mechanism configured to bond the first substrate and the second substrate by bring the first activation surface and the second activation surface contact, after the first activation surface and the second activation surface are irradiated.