Abstract: A W18O49 peak is confirmed by X-ray diffraction analysis of a sputtering surface and a cross section orthogonal to the sputtering surface, a ratio IS(103)/IS(010) of a diffraction intensity IS(103) of a (103) plane to a diffraction intensity IS(010) of a (010) plane of W18O49 of the sputtering surface is 0.38 or less, a ratio IC(103)/IC(010) of a diffraction intensity IC(103) of the (103) plane to a diffraction intensity IC(010) of the (010) plane of W18O49 of the cross section is 0.55 or more, and an area ratio of W18O49 phase of a surface parallel to the sputtering surface is 37% or more.

Abstract: A W18O49 peak is confirmed by X-ray diffraction analysis of a sputtering surface and a cross section orthogonal to the sputtering surface, a ratio IS(103)/IS(010) of a diffraction intensity IS(103) of a (103) plane to a diffraction intensity IS(010) of a (010) plane of W18O49 of the sputtering surface is 0.57 or more, a ratio IC(103)/IC(010) of a diffraction intensity IC(103) of the (103) plane to a diffraction intensity IC(010) of the (010) plane of W18O49 of the cross section is 0.38 or less, and an area ratio of the W18O49 phase of a surface parallel to the sputtering surface is 37% or more.

Abstract: A Cu—Ga sputtering target of the present invention includes, as a composition of metal components, Ga in a range of 5 at % to 60 at %, at least one additive element selected from the group consisting of K, Rb, and Cs in a range of 0.01 at % to 5 at %, and a balance including Cu and inevitable impurities, in which all or a part of the additive element is present in a state of halide particles including at least one halogen selected from the group consisting of F, Cl, Br, and I, a maximum particle size of the halide particles is 15 ?m or less, and an oxygen concentration is 1000 mass ppm or less.

Abstract: Provided is a sputtering target having a composition comprising: 5 at % or more and 60 at % or less of Ga, and 0.01 at % or more and 5 at % or less of alkali metal, as metal components; and a Cu balance including inevitable impurities, wherein a concentration of the alkali metal on a surface on a sputtering surface side is less than 80% of a concentration of the alkali metal inside the target.

Abstract: A Cu—Ga sputtering target made of a composition containing: as metal components excluding fluorine, 5 atomic % or more and 60 atomic % or less of Ga and 0.01 atomic % or more and 5 atomic % or less of K; and the Cu balance containing inevitable impurities is provided. In the Cu—Ga sputtering target, the Cu—Ga sputtering target has a region containing Cu, Ga, K, and F, in an atomic mapping image by a wavelength separation X-ray detector.