Patents by Inventor Kensuke Kegeyama

Kensuke Kegeyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20010016229
    Abstract: The ferroelectric thin film is formed from a liquid composition by the sol-gel processing which has a large amount of polarization, remarkably improved retention and imprint characteristics as compared with a PZT, minute grains and fine film quality, homogeneous electrical properties, and low leakage currents and which is suited for nonvolatile memories. The ferroelectric thin film of the present invention comprising a metal oxide represented by the general formula: (PbV CaW SrX LaY)(ZrZ Ti1−Z)O3, wherein 0.9≦V≦1.3, 0≦W≦0.1, 0≦X≦0.1, 0<Y≦0.1, 0<Z≦0.
    Type: Application
    Filed: January 17, 2001
    Publication date: August 23, 2001
    Inventors: Shan Sun, Thomas Domokos Hadnagy, Tom E. Davenport, Hiroto Uchida, Tsutomu Atsuki, Gakuji Uozumi, Kensuke Kegeyama, Katsumi Ogi
  • Patent number: 6203608
    Abstract: The ferroelectric thin film is formed from a liquid composition by the sol-gel processing which has a large amount of polarization, remarkably improved retention and imprint characteristics as compared with a PZT, minute grains and fine film quality, homogeneous electrical properties, and low leakage currents and which is suited for nonvolatile memories. The ferroelectric thin film of the present invention comprising a metal oxide represented by the general formula: (Pbv Caw SrX LaY)(ZrZ Ti1−Z)O3, wherein 0.9≦V≦1.3, 0≦W≦0.1, 0≦X≦0.1, 0<Y≦0.1, 0<Z≦0.
    Type: Grant
    Filed: April 15, 1998
    Date of Patent: March 20, 2001
    Assignees: Ramtron International Corporation, Mitsubishi Materials Corporation
    Inventors: Shan Sun, Thomas Domokos Hadnagy, Tom E. Davenport, Hiroto Uchida, Tsutomu Atsuki, Gakuji Uozumi, Kensuke Kegeyama, Katsumi Ogi