Patents by Inventor Kensuke Ogawa

Kensuke Ogawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5485018
    Abstract: A nanofabricated logic device, operable at multiple (more than two) logic levels comprises asymmetrically coupled quantum point contacts provided with respective sources and drains and a coupling region between gate electrodes. The quantum mechanical carrier wavefunction in the region of QPC1, 2 is spatially asmmetric with alternate quantised energy levels lying either in QPC1, or QPC2, so that by changing the energy level, the conductance of the device can be switched between multiple stable conductance levels. The device can be used to provide a multilevel output switched in response to terahertz pulses provided by an array of optical detectors.
    Type: Grant
    Filed: May 27, 1994
    Date of Patent: January 16, 1996
    Assignee: Hitachi, Ltd.
    Inventors: Kensuke Ogawa, Jeremy Allam
  • Patent number: 5455451
    Abstract: Superconductized electronic devices, such as a Josephson junction device, or superconductized optical devices represented by a light emitting and receiving devices of semiconductor laser are available using semiconductor materials which normally have no superconducting characteristics. The devices can operate by controlling the behavior of a Cooper pair in an active region which is formed in the semiconductor in advance using the penetrating phenomenon of the Cooper pair caused in the semiconductor proximate to the superconductor.
    Type: Grant
    Filed: April 22, 1993
    Date of Patent: October 3, 1995
    Assignee: Hitachi, Ltd.
    Inventors: Toshiyuki Usagawa, Masashi Kawasaki, Kensuke Ogawa, Toshiyuki Aida
  • Patent number: 5362972
    Abstract: A field effect transistor and a ballistic transistor using semiconductor whiskers each having a desired diameter and formed at s desired location, a semiconductor vacuum microelectronic device using the same as electron emitting materials, a light emitting device using the same as quantum wires and the like are disclosed.
    Type: Grant
    Filed: April 17, 1991
    Date of Patent: November 8, 1994
    Assignees: Hitachi, Ltd., Hitachi VLSI Engineering Corporation
    Inventors: Masamitsu Yazawa, Kenji Hiruma, Toshio Katsuyama, Nobutaka Futigami, Hidetoshi Matsumoto, Hiroshi Kakibayashi, Masanari Koguchi, Gerard P. Morgan, Kensuke Ogawa
  • Patent number: 5332910
    Abstract: A semiconductor light-emitting device includes a plurality of semiconductor rods, each of which has a pn junction. The semiconductor rods are formed on a semiconductor substrate such that the plurality of semiconductor rods are arranged at a distance substantially equal to an integer multiple of the wavelength of light emitted from the semiconductor rod. With such devices, various novel optical devices such as a micro-cavity laser of which the threshold current is extremely small and a coherent light-emitting device having no threshold value can be realized.
    Type: Grant
    Filed: November 30, 1993
    Date of Patent: July 26, 1994
    Assignee: Hitachi, Ltd.
    Inventors: Keiichi Haraguchi, Kenji Hiruma, Kensuke Ogawa, Toshio Katsuyama, Ken Yamaguchi, Toshiyuki Usagawa, Masamits Yazawa, Toshiaki Masuhara, Gerard P. Morgan, Hiroshi Kakibayashi
  • Patent number: 5315573
    Abstract: An information recording medium for suppressing the interferences of bits before and after reproduction and improving the optical resolution with saturable absorber 102 disposed adjacent or in an information recording medium layer 103. The recorded information is detected only from a region having a predetermined optical intensity or more of the focused spot so that minute information bits smaller than the optical resolution can be reproduced to improve the recording density of an optical disk drive drastically.
    Type: Grant
    Filed: July 31, 1992
    Date of Patent: May 24, 1994
    Assignee: Hitachi, Ltd.
    Inventors: Takeshi Nakao, Akira Arimoto, Kensuke Ogawa, Hirofumi Sukeda, Hisataka Sugiyama
  • Patent number: 5091980
    Abstract: A device structure is provided for optical modulation using a quantum interference effect in an excited state of electron-systems. The optical modulation is performed by causing the effect of modulation on the excited state of electron-systems represented by excitons to be executed on light via the state in which the light and the excited state of electron-systems represented by the excitonic polaritons are coupled.
    Type: Grant
    Filed: September 11, 1990
    Date of Patent: February 25, 1992
    Assignee: Hitachi, Ltd.
    Inventors: Kensuke Ogawa, Toshio Katsuyama, Tadashi Fukuzawa
  • Patent number: 5033810
    Abstract: An optical device has multilayer films formed by periodically laminating a number of layers each comprising at least two kinds of optical crystal thin films (f.sub.n, g.sub.n) having different refractive indices onto a substrate. The multilayer films include a semiconductor material having a large non-linear optical coefficient as a composing material and have artificial optical anisotropy. Since the multilayer films of the optical device have a large non-linear coefficient and optical anisotropy, a non-linear phenomenon such as second-harmonic generation or the like can be efficiently caused.
    Type: Grant
    Filed: June 19, 1989
    Date of Patent: July 23, 1991
    Assignee: Hitachi, Ltd.
    Inventors: Hiroaki Inoue, Kensuke Ogawa, Koji Ishida
  • Patent number: 4957337
    Abstract: A device structure is provided for optical modulation using a quantum interference effect in an excited state of electron-systems. The optical modulation is performed by causing the effect of modulation on the excited state of electron-systems represented by excitons to be executed on light via the state in which the light and the excited state of electron-systems represented by the excitonic polaritons are coupled.
    Type: Grant
    Filed: May 5, 1989
    Date of Patent: September 18, 1990
    Assignee: Hitachi, Ltd.
    Inventors: Kensuke Ogawa, Toshio Katsuyama, Tadashi Fukuzawa