Patents by Inventor Kensuke Okazawa
Kensuke Okazawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20190193146Abstract: A determination apparatus of a casting state in continuous casting where there are a solidified shell, a mold flux layer, and a mold being respective thermal conductors between a molten steel and cooling water for the mold, the determination apparatus comprising an estimation unit, a calculation unit, and a determination unit. A computer program for causing a computer to determine a casting state in continuous casting where there are a solidified shell, a mold flux layer, and a mold being respective thermal conductors between a molten steel and cooling water for the mold.Type: ApplicationFiled: March 6, 2019Publication date: June 27, 2019Applicant: NIPPON STEEL & SUMITOMO METAL CORPORATIONInventors: Satoshi KOSUGI, Kensuke OKAZAWA, Junichi NAKAGAWA
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Patent number: 10286447Abstract: A heat transfer coefficient ? between a solidified shell (2) and a mold (4) sandwiching a mold flux layer (3), and a heat transfer coefficient ? between a molten steel (1) and the solidified shell (2) are found by solving an inverse problem by using data from thermocouples (6), and a solidified shell thickness and a solidified shell temperature are estimated (solidified state in mold estimation amounts), and further, solidified state in mold evaluation amounts are obtained. It is determined whether a normal casting state or an abnormal casting state by comparing at least one or more kinds of amounts contained in the solidified state in mold estimation amounts and the solidified state in mold evaluation amounts with allowable limit values which are found based on at least one or more kinds of amounts contained in the solidified state in mold estimation amounts and the solidified state in mold evaluation amounts when the abnormal casting occurred in a past and stored in a data storage part.Type: GrantFiled: February 2, 2015Date of Patent: May 14, 2019Assignee: NIPPON STEEL & SUMITOMO METAL CORPORATIONInventors: Satoshi Kosugi, Kensuke Okazawa, Junichi Nakagawa
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Publication number: 20160332221Abstract: A heat transfer coefficient ? between a solidified shell (2) and a mold (4) sandwiching a mold flux layer (3), and a heat transfer coefficient ? between a molten steel (1) and the solidified shell (2) are found by solving an inverse problem by using data from thermocouples (6), and a solidified shell thickness and a solidified shell temperature are estimated (solidified state in mold estimation amounts), and further, solidified state in mold evaluation amounts are obtained. It is determined whether a normal casting state or an abnormal casting state by comparing at least one or more kinds of amounts contained in the solidified state in mold estimation amounts and the solidified state in mold evaluation amounts with allowable limit values which are found based on at least one or more kinds of amounts contained in the solidified state in mold estimation amounts and the solidified state in mold evaluation amounts when the abnormal casting occurred in a past and stored in a data storage part.Type: ApplicationFiled: February 2, 2015Publication date: November 17, 2016Applicant: NIPPON STEEL & SUMITOMO METAL CORPORATIONInventors: Satoshi KOSUGI, Kensuke OKAZAWA, Junichi NAKAGAWA
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Patent number: 8038973Abstract: The present invention provides a high purity silicon production system and production method suitable for using inexpensive metallurgical grade metal silicon as a material and using the slag refining method to produce high purity silicon with a purity of 6N or more suitable for solar battery applications, in particular, high purity silicon with a boron content of at least not more than 0.3 mass ppm, inexpensively on an industrial scale, that is, a high purity silicon production system and production method using the slag refining method wherein a direct electromagnetic induction heating means having the function of directly heating the molten silicon in the crucible by electromagnetic induction is arranged outside the outside wall surface of the above crucible and the crucible is formed by an oxidation resistant material at least at a region where the molten silicon contacts the crucible inside wall surface at the time of not powering the direct electromagnetic induction heating means.Type: GrantFiled: July 20, 2006Date of Patent: October 18, 2011Assignee: Nippon Steel Materials Co., Ltd.Inventors: Nobuaki Ito, Kensuke Okazawa, Shinji Tokumaru, Masaki Okajima
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Patent number: 8034151Abstract: The present invention provides a method for removal of boron from metal silicon inexpensively and extremely efficiently by a simple method, specifically, heating metal silicon containing boron as an impurity to its melting point to 2200° C. to place it in a molten state, then adding a solid mainly comprised of silicon dioxide and a solid mainly comprised of one or both of a carbonate of an alkali metal or a hydrate of a carbonate of an alkali metal into said molten silicon so as to form a slag and remove the boron in the silicon.Type: GrantFiled: March 2, 2005Date of Patent: October 11, 2011Assignee: Nippon Steel CorporationInventors: Jiro Kondo, Kensuke Okazawa
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Patent number: 7662356Abstract: The present invention provides a method of refining low purity Si by a slag, in particular removing B, which suppresses wear of the reaction vessel due to the slag and produces high purity Si used for solar battery materials etc. at a low cost, comprising adding SiO2 and an alkali oxide or alkali carbonate as a slag material into molten Si to form a slag during which adding one or more types of materials among materials the same as the reaction vessel material used or ingredients included in the reaction vessel material into the slag so as to remove the impurities in the molten Si.Type: GrantFiled: February 9, 2006Date of Patent: February 16, 2010Assignee: Nippon Steel Materials Co., Ltd.Inventors: Shinji Tokumaru, Kensuke Okazawa, Jirou Kondou, Masaki Okajima
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Publication number: 20090155158Abstract: The present invention provides a high purity silicon production system and production method suitable for using inexpensive metallurgical grade metal silicon as a material and using the slag refining method to produce high purity silicon with a purity of 6N or more suitable for solar battery applications, in particular, high purity silicon with a boron content of at least not more than 0.3 mass ppm, inexpensively on an industrial scale, that is, a high purity silicon production system and production method using the slag refining method wherein a direct electromagnetic induction heating means having the function of directly heating the molten silicon in the crucible by electromagnetic induction is arranged outside the outside wall surface of the above crucible and the crucible is formed by an oxidation resistant material at least at a region where the molten silicon contacts the crucible inside wall surface at the time of not powering the direct electromagnetic induction heating means.Type: ApplicationFiled: July 20, 2006Publication date: June 18, 2009Applicant: NIPPON STEEL MATERIALS COL. LTD.Inventors: Nobuaki Ito, Kensuke Okazawa, Shinji Tokumaru, Masaki Okajima
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Publication number: 20080311020Abstract: An object of the invention is to provide a method for producing a large amount of inexpensive and high purity silicon useful in a solar battery. The method includes steps of preparing molten silicon, preparing a slag, bringing the molten silicon and the slag into contact with each other, and exposing at least the slag to vacuum pressure.Type: ApplicationFiled: February 28, 2006Publication date: December 18, 2008Applicant: NIPPON STEEL MATERIALS CO., LTD.Inventors: Nobuaki Ito, Jiro Kondo, Kensuke Okazawa, Masaki Okajima
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Publication number: 20080274031Abstract: The invention relates to a method for producing a great deal of inexpensive high purity silicon useful in a solar battery. Disclosed is a method for producing high purity silicon by removing boron from silicon by oxidization including commencing an oxidization reaction between an oxidizing agent and molten silicon, and cooling at least part of the oxidizing agent during the reaction.Type: ApplicationFiled: February 28, 2006Publication date: November 6, 2008Applicant: NIPPON STEEL MATERIALS CO., LTDInventors: Nobuaki Ito, Jiro Kondo, Kensuke Okazawa, Masaki Okajima
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Publication number: 20080247936Abstract: An object of the present invention is to provide a method for producing a great deal of inexpensive high purity silicon useful in a solar battery. Disclosed is a method for producing the high purity silicon by migrating impurities in molten silicon to slag including the step of feeding an oxidizing agent to the molten silicon together with slag, wherein the oxidizing agent is a material comprising as a primary component at least one of the following materials: alkali metal carbonate, hydrate of alkali metal carbonate, alkali metal hydroxide, alkaline-earth metal carbonate, hydrate of alkaline-earth metal carbonate or alkaline-earth metal hydroxide.Type: ApplicationFiled: February 28, 2006Publication date: October 9, 2008Applicant: NIPPON STEEL MATERIALS CO., LTD.Inventors: Nobuaki Ito, Jiro Kondo, Kensuke Okazawa, Masaki Okajima
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Publication number: 20080145294Abstract: The present invention provides a method of refining low purity Si by a slag, in particular removing B, which suppresses wear of the reaction vessel due to the slag and produces high purity Si used for solar battery materials etc. at a low cost, comprising adding SiO2 and an alkali oxide or alkali carbonate as a slag material into molten Si to form a slag during which adding one or more types of materials among materials the same as the reaction vessel material used or ingredients included in the reaction vessel material into the slag so as to remove the impurities in the molten Si.Type: ApplicationFiled: February 9, 2006Publication date: June 19, 2008Inventors: Shinji Tokumaru, Kensuke Okazawa, Jirou Kondou, Masaki Okajima
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Publication number: 20070180949Abstract: The present invention provides a method for removal of boron from metal silicon inexpensively and extremely efficiently by a simple method, specifically, heating metal silicon containing boron as an impurity to its melting point to 2200° C. to place it in a molten state, then adding a solid mainly comprised of silicon dioxide and a solid mainly comprised of one or both of a carbonate of an alkali metal or a hydrate of a carbonate of an alkali metal into said molten silicon so as to form a slag and remove the boron in the silicon.Type: ApplicationFiled: March 2, 2005Publication date: August 9, 2007Inventors: Jiro Kondo, Kensuke Okazawa
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Patent number: 5746268Abstract: A method and an apparatus for continuously casting a metal slab made of steel are provided for uniformly circulating molten metal on a meniscus in a mold. The cast metal slab has no surface defect such as a slitting. On the meniscus, the method and apparatus operates to generate electromagnetic stirring thrusts along two long mold sides, these thrusts being opposed to each other. The thrust oriented from a dipping nozzle to the short mold side is made larger than the thrust oriented from the short mold side to the dipping nozzle. A circuit for connecting each coil of a shifting field electromagnetic stirring coil part with a three-phase power supply is symmetric to another circuit with respect to the dipping nozzle. The circuit is divided into two parts along each long mold side. The divided circuit parts are located in parallel but have respective impedances.Type: GrantFiled: May 9, 1996Date of Patent: May 5, 1998Assignee: Nippon Steel CorporationInventors: Keisuke Fujisaki, Kiyoshi Wajima, Kenji Umetsu, Kenzo Sawada, Takatsugu Ueyama, Takehiko Toh, Kensuke Okazawa, Yasushi Okumura