Abstract: A MOS transistor includes a p-type semiconductor substrate, a p-type epitaxial layer, and an n-type buried layer provided in a boundary between the semiconductor substrate and the epitaxial layer. In a p-type body layer provided in a surface portion of the epitaxial layer, an n-type source layer is provided to define a double diffusion structure together with the p-type body layer. An n-type drift layer is provided in a surface portion of the epitaxial layer in spaced relation from the body layer. An n-type drain layer is provided in a surface portion of the epitaxial layer in contact with the n-type drift layer. A p-type buried layer having a lower impurity concentration than the n-type buried layer is buried in the epitaxial layer between the drift layer and the n-type buried layer in contact with an upper surface of the n-type buried layer.

Abstract: A MOS transistor includes a p-type semiconductor substrate, a p-type epitaxial layer, and an n-type buried layer provided in a boundary between the semiconductor substrate and the epitaxial layer. In a p-type body layer provided in a surface portion of the epitaxial layer, an n-type source layer is provided to define a double diffusion structure together with the p-type body layer. An n-type drift layer is provided in a surface portion of the epitaxial layer in spaced relation from the body layer. An n-type drain layer is provided in a surface portion of the epitaxial layer in contact with the n-type drift layer. A p-type buried layer having a lower impurity concentration than the n-type buried layer is buried in the epitaxial layer between the drift layer and the n-type buried layer in contact with an upper surface of the n-type buried layer.

Abstract: A MOS transistor includes a p-type semiconductor substrate, a p-type epitaxial layer, and an n-type buried layer provided in a boundary between the semiconductor substrate and the epitaxial layer. In a p-type body layer provided in a surface portion of the epitaxial layer, an n-type source layer is provided to define a double diffusion structure together with the p-type body layer. An n-type drift layer is provided in a surface portion of the epitaxial layer in spaced relation from the body layer. An n-type drain layer is provided in a surface portion of the epitaxial layer in contact with the n-type drift layer. A p-type buried layer having a lower impurity concentration than the n-type buried layer is buried in the epitaxial layer between the drift layer and the n-type buried layer in contact with an upper surface of the n-type buried layer.

Abstract: The n-channel double diffusion MOS transistor includes a p-type semiconductor substrate, a p-type epitaxial layer, and an n-type buried layer provided in a boundary between the p-type semiconductor substrate and the p-type epitaxial layer. In a p-type body layer provided in a surface portion of the p-type epitaxial layer, an n-type source layer is provided to define a double diffusion structure together with the p-type body layer. An n-type drift layer is provided in a surface portion of the p-type epitaxial layer in spaced relation from the p-type body layer. An n-type drain layer is provided in a surface portion of the p-type epitaxial layer in contact with the n-type drift layer. A p-type buried layer having a lower impurity concentration than the n-type buried layer is buried in the p-type epitaxial layer between the n-type drift layer and the n-type buried layer in contact with an upper surface of the n-type buried layer.

Abstract: A production method for an image sensor which is provided with a plurality of sensor portions arranged on a semiconductor substrate and each having a first photodiode constituted by a first region of a first conductivity type and a second region of a second conductivity type different from the first conductivity type and a second photodiode constituted by the second region and a third region of the first conductivity type. The method includes the steps of: forming a second region of the second conductivity type on a first region defined in a semiconductor substrate by epitaxial growth; and forming a third region of the first conductivity type on the second region by epitaxial growth.

Abstract: An image sensor provided with: a plurality of photodiodes arranged on a surface of a semiconductor substrate, the photodiodes each including a first region of a first conductivity type provided on the semiconductor substrate, a second region of a second conductivity type provided on the first region, the second conductivity type being different from the first conductivity type, and a signal extraction region of the second conductivity type provided on the second region; and an isolation region which electrically isolates the second regions of each adjacent pair of photodiodes from each other, the isolation region including a first trench provided between the second regions of the adjacent photodiodes and an oxide film provided on the first trench in the vicinity of surfaces of the second regions and having a greater width than the first trench.

Abstract: An image sensor provided with: a plurality of photodiodes arranged on a surface of a semiconductor substrate, the photodiodes each including a first region of a first conductivity type provided on the semiconductor substrate, a second region of a second conductivity type provided on the first region, the second conductivity type being different from the first conductivity type, and a signal extraction region of the second conductivity type provided on the second region; and an isolation region which electrically isolates the second regions of each adjacent pair of photodiodes from each other, the isolation region including a first trench provided between the second regions of the adjacent photodiodes and an oxide film provided on the first trench in the vicinity of surfaces of the second regions and having a greater width than the first trench.

Abstract: A production method for an image sensor which is provided with a plurality of sensor portions arranged on a semiconductor substrate and each having a first photodiode constituted by a first region of a first conductivity type and a second region of a second conductivity type different from the first conductivity type and a second photodiode constituted by the second region and a third region of the first conductivity type. The method includes the steps of: forming a second region of the second conductivity type on a first region defined in a semiconductor substrate by epitaxial growth; and forming a third region of the first conductivity type on the second region by epitaxial growth.

Abstract: A production method for an image sensor which is provided with a plurality of sensor portions arranged on a semiconductor substrate and each having a first photodiode constituted by a first region of a first conductivity type and a second region of a second conductivity type different from the first conductivity type and a second photodiode constituted by the second region and a third region of the first conductivity type. The method includes the steps of: forming a second region of the second conductivity type on a first region defined in a semiconductor substrate by epitaxial growth; and forming a third region of the first conductivity type on the second region by epitaxial growth.

Abstract: An EEPROM device has an array of memory cells composed of nonvolatile data-storage elements that allow electrical writing and erasing of data. The array of memory cells is provided with an area for storing data representing the length of writing time for which the writing and erasing of data are performed. The writing-time data is read out from this area and held in a latch circuit. The latched data is used as the target count up to which a counter counts a clock. The counter starts counting in response to a start signal and stops counting when the actual count reaches the target count. The counter, while it is counting, outputs a high-level signal, which determines the length of writing time for which writing is performed in the memory cells.

Abstract: An image sensor comprises a light emitting element for emitting light to be irradiated onto the original document, a light receiving element for receiving the light reflected by the document, and a connector, all of which are mounted on the same base plate. The base plate is then mounted in a frame. Therefore, the image sensor can be produced through a reduced number of assembling steps and with a reduced dimension.

Abstract: A glass cover is mounted on the top portion of a frame and, in the frame, a light source substrate with a light emitting element packaged therein is fixed and a rod lens array is fixed, a substrate with a light receiving element packaged therein is disposed in the lower portion of the frame, a substrate including a heating resistor is mounted in the lower portion of the frame, a drive element for driving the heating resistor is packaged on the back side of the substrate, and the drive element is electrically connected with the substrate.

Abstract: In an image sensor having, in a frame equipped with a transparent cover engageable with an objective, a light emitter for radiating light over the objective, an optical system for condensing light reflected from the objective and for directing the light to a predetermined position, a light receptor for receiving the light directed by said optical system, electronic elements constituting the light receptor are mounted on a long substrate, and other electronic elements are mounted on a single short substrate, which is attached to the long substrate at a portion other than the portion where the light receptor is mounted. This image sensor can be assembled in a reduced number of steps, preventing soldering flux from flying to the light receptor.

Abstract: There is provided an image sensor which can reduce loss in light emitted from a light emitting section toward an object to be sensed and also variability in the distribution of light and which can be produced with a small-sized structure with a reduced number of parts and with a decreased manufacturing cost. An optical path from the light emitting section to a transparent covering on which the object is to be placed is surrounded by a light reflecting portion. Light from the light emitting section can be irradiated onto the transparent covering without reduction in the amount of light while being repeatedly reflected by the light reflecting portion. The light reflected by the object is condensed by a condensing lens, the condensed light being then received by a light receiving section mounted on the same base plate as in the light emitting section. At the light receiving section, the light is converted into an electrical signal.

Abstract: A small-sized image sensor which does not exert the deleterious influence of soldering, especially, on the light receiving device when attaching a substrate for a light emitting device. A glass cover (11) is attached to the upper portion of a frame (10), and a substrate of a light projecting portion having a light emitting device (12) is fixed to the frame (10) in such a manner as to be inclined toward the glass cover (11). A rod lens array (14) for converging the light reflected from a copy on the glass cover (11) is fixed to the frame (10) in such a manner as to be perpendicular to the glass cover (11). A sensor substrate (16) having a light receiving device (15) is disposed directly under the rod lens array (14), and a hybrid substrate (21) with an electronic part (20) mounted thereon is disposed in a space within the frame (10). The substrates (16) and (21) are connected by a lead frame (22 ) soldered to the bottom surface of the sensor substrate (16). The lead frame also supports the substrate (21).

Abstract: An LED array in which the optical output distribution in each light emitting region is as uniform as possible. An n electrode 3 is provided on the under surface of a substrate 2 and a p electrode is provided on the upper surface thereof. A multiplicity of light emitting regions 4 are formed on the upper layer of the substrate 2. Two strip-like conductor portions 6c extending over each light emitting region 4 in ohmic contact are connected to each electrode 6 so that a current is efficiently applied to the conductor portions 6c of each light emitting region 4 and the optical output distribution in each light emitting region 4 is made uniform.

Abstract: A pair of rollers spaced at a predetermined interval are arranged in the bottom part of a facsimile machine. When the facsimile machine is manually moved on an original document while pushed against it, the rollers rotate. Detecting the rotation of the rollers, an encoder performs power on/off operations, i.e., enables/disables the supply of an electric power from a compact power supply unit, in accordance with the start/stop of the roller rotation. Upon the power on, an image sensor starts to read the document. An image signal produced by the image sensor is processed by a signal control unit, and then modulated by a G3 modem. The modulated signal is sent out to a telephone line via a network control board.

Abstract: An image sensor has a frame including a reading window formed therein at the top of the frame. The reading window is closed by a glass covering which is adhered to the frame through an adhesive. First and second grooves are provided in the frame to extend along the reading window. After the adhesive has been charged into the first groove, the glass covering is placed and pressed against the frame top so that the glass covering will be adhered to the frame top through the adhesive. At this time, any excess adhesive may be received and held by the second groove.

Abstract: In an image sensor, a light receptor has a shield film formed substantially centrally in a light receiving area on each of a plurality of light receiving devices, except those disposed at opposite ends of each sensor IC, for adjusting the quantity of light received by each light emitting device. The result is that fluctuation of sensitivity and resolution failure, which might occur during the production of sensor ICs to be used as the light receptor, can be eliminated.

Abstract: A line image sensor capable of being constructed in a simple manner with reduced production steps at a low cost. The line image sensor includes a case body having a mount groove part in an appropriate part of a container chamber, and a LED array container case for containing a LED array, mounted to the case body within the container chamber. The LED array container case includes a mount part to be engaged with the mount groove part for mounting the LED array container case to the case body, a spring plate part for pushing and holding a condenser lens against an internal wall of the container chamber, and holding projection parts for pushing and holding the LED array within the LED array container case, and directs light generated by the LED array to a transparent glass plate for supporting a manuscript. A resilient member can be used in place of the spring plate part. A facsimile machine including the line image sensor is also disclosed.