Abstract: A silicon carbide semiconductor device has an active region and a termination structure portion disposed outside of the active region. The silicon carbide semiconductor device includes a semiconductor substrate of a second conductivity type, a first semiconductor layer of the second conductivity type, a second semiconductor layer of a first conductivity type, first semiconductor regions of the second conductivity type, second semiconductor regions of the first conductivity type, a gate insulating film, a gate electrode, a first electrode, and a second electrode. During bipolar operation, a smaller density among an electron density and a hole density of an end of the second semiconductor layer in the termination structure portion is at most 1×1015/cm3.

Abstract: A method for reacting sulfur trioxide and sulfateable or sulfonateable liquid organic compounds such as alcohols, and unsaturated or aromatic compounds is disclosed which comprises contacting said organic liquid with a gaseous mixture of from 2 to 20% by volume of sulfur trioxide and the balance an inert gas diluent, in a vertical cylindrical reaction zone that is at least about 25 mm. in diameter and comprises a straight cylinder having a gas-liquid contact length of at least 1.5 meters and having an annular inlet means for the liquid at the lower end of the reaction zone; the contact being effected by means of an upward stream of the gaseous mixture having sufficient velocity to form the liquid into a rising annular film throughout the length of the zone.

Abstract: A colored detergent composition comprising a sulfate- or sulfonate-type anionic organic surfactant, a coloring agent, and from 0.02 to 1 percent by weight, based on the weight of said surfactant, of butylated hydroxytoluene or butylated hydroxyanisole. The detergent composition possesses the property of reduced color fading.