Abstract: A method of manufacturing a superjunction silicon carbide semiconductor device is provided, enabling a reduction of the number of times a combination of epitaxial growth and ion implantation for forming a parallel pn structure is performed. In the method of manufacturing the superjunction silicon carbide semiconductor device, forming an epitaxial layer 2a, 2b of a second conductivity type on a front surface of a silicon carbide semiconductor substrate 1 of a first conductivity type and selectively forming semiconductor regions 4a, 4b of the first conductivity type by implanting nitrogen ions in the epitaxial layer are repeated multiple times, thereby forming the parallel pn structure.

Abstract: A silicon carbide semiconductor device has an active region and a termination structure portion disposed outside of the active region. The silicon carbide semiconductor device includes a semiconductor substrate of a second conductivity type, a first semiconductor layer of the second conductivity type, a second semiconductor layer of a first conductivity type, first semiconductor regions of the second conductivity type, second semiconductor regions of the first conductivity type, a gate insulating film, a gate electrode, a first electrode, and a second electrode. During bipolar operation, a smaller density among an electron density and a hole density of an end of the second semiconductor layer in the termination structure portion is at most 1×1015/cm3.

Abstract: There is provided a method that makes it possible to observe fine crystal defects using light of a visible region. The method includes illuminating a substrate with polarized parallel light and evaluating a crystal quality of at least a part of the substrate from an image obtained by light transmitted through or reflected by the substrate. The half width HW, the divergence angle DA, and the center wavelength CWL of the parallel light satisfy conditions given below 3?HW?100 0.1?DA?5 250?CWL?1600 where the center wavelength CWL and the half width HW are expressed in units of nm and the divergence angle DA is expressed in units of mrad.

Abstract: There is provided a method that makes it possible to observe fine crystal defects using light of a visible region. The method includes illuminating a substrate with polarized parallel light and evaluating a crystal quality of at least a part of the substrate from an image obtained by light transmitted through or reflected by the substrate. The half width HW, the divergence angle DA, and the center wavelength CWL of the parallel light satisfy conditions given below 3?HW?100 0.1?DA?5 250?CWL?1600 where the center wavelength CWL and the half width HW are expressed in units of nm and the divergence angle DA is expressed in units of mrad.

Abstract: A photovoltaic cell includes a photoelectric conversion element (PCE) in which an i-type silicon layer formed of a microcrystalline silicon film is provided between an n-type silicon layer and a p-type silicon layer, and the n-type silicon layer or p-type silicon layer positioned on a substrate side is configured of an amorphous silicon film. The PCE is formed wherein a mixture of a silane containing gas and hydrogen gas is introduced into a chamber and a seed layer formed of a microcrystalline silicon film is formed between the n-type silicon layer or p-type silicon layer positioned on the substrate side and the i-type silicon layer. The crystallization rate of a portion in contact with the n-type silicon layer or p-type silicon layer positioned on the substrate side is lower than that of the i-type silicon layer, and the rate increases continuously, or gradually in two or more stages, toward the i-type silicon layer side, continuing to the i-type silicon layer.

Abstract: A thin-film solar cell can include a light-reflective metal electrode layer, a first transparent conductive layer, a semiconductor layer and a front transparent conductive layer. The metal electrode layer can be formed on a substrate and has an uneven structure. The first transparent conductive layer can contain an amorphous transparent conductive material. The thin-film solar cell further can have a second transparent conductive layer between the first transparent conductive layer and the semiconductor layer. The second transparent conductive layer can be made of a crystalline transparent conductive material. Due to the first transparent conductive layer made amorphous, the surface roughness of the metal electrode layer is reduced so that the semiconductor layer can be formed with a good film quality.