Abstract: A syringe is provided with a barrel having a distal end part provided with an outlet opening; a filter disposed closer to a proximal side than the outlet opening inside the barrel; and a holding member. A proximal side part disposed closer to the proximal side than the filter of the holding member has a flow path, a proximal side space into which the medicine flows through the flow path is provided on the proximal side of the filter, a distal side space into which the medicine flows from the proximal side space via the filter is provided on the distal side of the filter, and an area of the outlet opening is smaller than an area of the proximal side space, smaller than an area of the distal side space, and smaller than an area of the flow path.

Abstract: Provided is a syringe cap including a projection extending in the circumferential direction of a cap body, wherein the projection includes an apex located radially outward of the cap body from the outer circumferential surface of the cap body, a first inclined surface having a starting end located at the apex and having a terminal end located at a position on the side closer to the proximal end of the cap body than the starting end is, and a second inclined surface having a starting end located at the apex and on the outer circumferential surface of the cap body having a terminal end located at a position on the side closer to the distal end of the cap body than the starting end is, on the outer circumferential surface of the cap body, and the shortest distance from the starting end to the terminal end of the first inclined surface is smaller than the shortest distance from the starting end to the terminal end of the second inclined surface.

Abstract: A treatment method is provided that includes an embedding step of embedding an organic film in an undercoat film in which a depression is formed; and an etching step of performing etching, after the embedding step, until at least a portion of a top of the undercoat film is exposed.

Abstract: A method of plasma processing includes cyclically performing a cycle including the steps of performing a glow phase and performing an afterglow phase. The glow phase includes providing a first SP pulse comprising a first SP power level for a first duration to an SP electrode to generate a capacitively coupled plasma in a plasma processing chamber. The first SP pulse terminates at the end of the glow phase. The afterglow phase is performed after the glow phase and includes providing a BP pulse train to a BP electrode coupled to a target substrate within the plasma processing chamber in an afterglow of the capacitively coupled plasma for a second duration between about 10 ?s and about 100 ?s. The BP pulse train includes a plurality of BP spikes. Each of the plurality of BP spikes is a DC pulse that has a first BP power level.

Abstract: A plasma processing apparatus which forms a first film on a pattern formed on a substrate having dense and coarse areas, and then performs sputtering or etching on the first film.

Abstract: A method includes performing a first on phase including applying an SP pulse to an SP electrode to generate plasma, performing a second on phase after the first on phase, performing a corner etch phase after the second on phase, and performing a by-product management phase after the corner etch phase. The SP pulse terminates at the end of the first on phase. The second on phase includes applying a first BP pulse to a BP electrode coupled to a target substrate. The first BP pulse includes a first BP power level and accelerates ions of the plasma toward to target substrate. The corner etch phase includes applying a BP spike including a second BP power level greater than the first BP power level. The duration of the BP spike is less than the duration of the first BP pulse.

Abstract: A method includes performing a first on phase including applying an SP pulse to an SP electrode to generate plasma, performing a second on phase after the first on phase, performing a corner etch phase after the second on phase, and performing a by-product management phase after the corner etch phase. The SP pulse terminates at the end of the first on phase. The second on phase includes applying a first BP pulse to a BP electrode coupled to a target substrate. The first BP pulse includes a first BP power level and accelerates ions of the plasma toward to target substrate. The corner etch phase includes applying a BP spike including a second BP power level greater than the first BP power level. The duration of the BP spike is less than the duration of the first BP pulse.

Abstract: A plasma processing apparatus which forms a first film on a pattern formed on a substrate having dense and coarse areas, and then performs sputtering or etching on the first film.

Abstract: A treatment method is provided that includes an embedding step of embedding an organic film in an undercoat film in which a depression is formed; and an etching step of performing etching, after the embedding step, until at least a portion of a top of the undercoat film is exposed.

Abstract: A plasma processing method performed using a plasma processing apparatus includes a first step of forming a first film on a pattern formed on a substrate and having dense and coarse areas, and a second step of performing sputtering or etching on the first film.

Abstract: A plasma processing method performed using a plasma processing apparatus includes a first step of forming a first film on a pattern formed on a substrate and having dense and coarse areas, and a second step of performing sputtering or etching on the first film.

Abstract: A method of selectively etching a first region R1 made of silicon oxide with respect to a second region R2 made of silicon nitride by performing a plasma processing upon a processing target object is provided. The processing target object has the second region R2 forming a recess; the first region R1 configured to fill the recess; and a mask MK provided on the first region R1. The method includes a first process of generating plasma of a processing gas containing a fluorocarbon gas, and a second process of etching the first region with radicals of fluorocarbon contained in a deposit. In the second process, a high frequency power contributing to the generating of the plasma is applied in a pulse shape, and these processes are repeated.

Abstract: A method of selectively etching a first region R1 made of silicon oxide with respect to a second region R2 made of silicon nitride by performing a plasma processing upon a processing target object is provided. The processing target object has the second region R2 forming a recess; the first region R1 configured to fill the recess; and a mask MK provided on the first region R1. The method includes a first process of generating plasma of a processing gas containing a fluorocarbon gas, and a second process of etching the first region with radicals of fluorocarbon contained in a deposit. In the second process, a high frequency power contributing to the generating of the plasma is applied in a pulse shape, and these processes are repeated.

Abstract: An object is to provide a syringe that is capable of preventing a cap from being mounted to a syringe body at an oblique angle. The cap includes an elastic cylindrical body for receiving an injection needle therein and sealing a holding part, and an external cylindrical body for covering the circumference of the elastic cylindrical body and holding the elastic cylindrical body in such a manner as to prevent movement of the elastic cylindrical body. The external cylindrical body includes an opening part having a dimension configured to be larger than the holding part of the syringe body, and a guide part that guides the injection needle toward a certain direction by coming into contact with a part of the syringe body when the injection needle is received inside the elastic cylindrical body.