Abstract: A semiconductor device manufacturing method includes: (A) orienting an upper surface of a semiconductor element which has the upper surface and a suction surface of a collet which has a suction hole so that the upper surface of the semiconductor device and the suction surface of the collet face each other, the upper surface including a first region and a second region, the second region lying higher than the first region; (B) bringing the suction surface of the collet into contact with a part of the second region of the semiconductor element; and (C) picking up the semiconductor element using the collet while the collet sucks in air between the first region and the suction surface via the suction hole, wherein in (B), an entirety of an uppermost surface of the second region is in contact with a region of the suction surface exclusive of the suction hole.

Abstract: A light emitting device includes: a substrate; a light emitting element disposed on the substrate; a light transmissive member having a plate shape and having an upper face and a lower face that is larger than the upper face, disposed such that the lower face opposes a light emission face of the light emitting element; a light reflecting member covering lateral faces of the light transmissive member; and a light shielding frame covering lateral faces of the light transmissive member via the light reflecting member. The light shielding frame has an opening. An outer perimeter of the lower face of the light transmissive member is positioned outward of an inner perimeter of the opening in a plan view as seen from above.

Abstract: A light emitting device includes: a substrate; a light emitting element disposed on the substrate; a light transmissive member having a plate shape and having an upper face and a lower face disposed such that the lower face opposes a light emission face of the light emitting element; a light reflecting member covering lateral faces of the light emitting element and lateral faces of the light transmissive member; and a light shielding frame disposed on the upper face of the light reflecting member surrounding the light transmissive member. The light shielding frame has an opening, an inner perimeter of the opening is positioned at a distance apart from an outer perimeter of the upper face of the light transmissive member in a plan view as seen from above, and the light reflecting member is interposed between the inner perimeter of the opening and the outer perimeter of the upper face of the light transmissive member.

Abstract: A light emitting element includes a semiconductor layered body, an insulating film, first and second electrodes, first external connecting parts and at least one second external connecting part. The semiconductor layered body includes a first semiconductor layer, a light emitting layer, and a second semiconductor layer. The first electrode is connected to the first semiconductor layer at exposed parts through openings in the insulating film, and partially arranged on the second semiconductor layer via the insulating film. The first external connecting parts are connected to the first electrode. The first external connecting parts are spaced apart from the exposed parts in a plan view, and at least two of the first external connecting parts being arranged between at least one set of adjacent ones of the exposed parts in the plan view. The second external connecting part is connected to the second electrode.

Abstract: A light emitting device manufacturing method includes: disposing n pieces of light emitting elements in m rows on a substrate block, where an interval between a kth light emitting element from one end of rows and a (k+1)th light emitting element has a first distance; disposing a phosphor member on the light emitting elements; disposing a frame member to surround the light emitting elements; disposing a cover member in each area surrounded by the frame member to cover lateral surfaces of the light emitting elements and the phosphor members while forming recesses at an upper surface between the kth light emitting elements and the (k+1)th light emitting elements apart by the first distance; disposing a light shielding member in each recess; and cutting the light shielding members, the cover members, and the substrate block between the light emitting elements that are apart by the first distance.

Abstract: A light emitting element includes a semiconductor layered body, an insulating film, first and second electrodes, first external connecting parts and at least one second external connecting part. The semiconductor layered body includes a first semiconductor layer, a light emitting layer, and a second semiconductor layer. The first electrode is connected to the first semiconductor layer at exposed parts through openings in the insulating film, and partially arranged on the second semiconductor layer via the insulating film. The first external connecting parts are connected to the first electrode. The first external connecting parts are spaced apart from the exposed parts in a plan view. A group comprising at least one of the first external connecting parts and other group comprising at least one of the first external connecting parts respectively surround adjacent ones of the exposed parts while being spaced apart from each other in the plan view.

Abstract: A method for manufacturing a light-emitting device includes: a mounting step; a light-shielding frame placement step; a light-transmissive member placement step; a light-guiding supporting member formation step; a light-guiding supporting member bonding step; and a second light-reflective member formation step.

Abstract: A method of manufacturing a light emitting device includes: mounting a light emitting element on a substrate; disposing a light shielding frame on a sheet, the light shielding frame having an opening; disposing a plate-shaped light transmissive member in the opening, the plate-shaped light transmissive member having a first face and a second face opposite the first face, wherein an outer perimeter of the first face is smaller than an inner perimeter of the opening; forming a light guide support member by filling the space with a first light reflecting member; bonding the light guide support member by bonding an upper face of the light emitting element and the second face of the light transmissive member; and forming a second light reflecting member surrounding the light emitting element by filling the space between the substrate and the light shielding frame with a second reflecting resin.

Abstract: A light emitting element includes a semiconductor layered body, an insulating film, first and second electrodes, first external connecting parts and at least one second external connecting part. The semiconductor layered body includes a first semiconductor layer, a light emitting layer, and a second semiconductor layer. The first electrode is connected to the first semiconductor layer at exposed parts through openings in the insulating film, and partially arranged on the second semiconductor layer via the insulating film. The first external connecting parts are connected to the first electrode. The first external connecting parts are spaced apart from the exposed parts in a plan view. A group comprising at least one of the first external connecting parts and other group comprising at least one of the first external connecting parts respectively surround adjacent ones of the exposed parts while being spaced apart from each other in the plan view.

Abstract: A light emitting device includes: a substrate; a light emitting element disposed on the substrate; a light transmissive member having a plate shape and having an upper face and a lower face disposed such that the lower face opposes a light emission face of the light emitting element; a light reflecting member covering lateral faces of the light emitting element and lateral faces of the light transmissive member; and a light shielding frame disposed on the upper face of the light reflecting member surrounding the light transmissive member. The light shielding frame has an opening, an inner perimeter of the opening is positioned at a distance apart from an outer perimeter of the upper face of the light transmissive member in a plan view as seen from above, and the light reflecting member is interposed between the inner perimeter of the opening and the outer perimeter of the upper face of the light transmissive member.

Abstract: A semiconductor device manufacturing method includes: (A) orienting an upper surface of a semiconductor element which has the upper surface and a suction surface of a collet which has a suction hole so that the upper surface of the semiconductor device and the suction surface of the collet face each other, the upper surface including a first region and a second region, the second region lying higher than the first region; (B) bringing the suction surface of the collet into contact with a part of the second region of the semiconductor element; and (C) picking up the semiconductor element using the collet while the collet sucks in air between the first region and the suction surface via the suction hole, wherein in (B), an entirety of an uppermost surface of the second region is in contact with a region of the suction surface exclusive of the suction hole.

Abstract: Converting lightness of each pixel even for images having continuous lightness includes: setting a local area around a pixel for which lightness is converted, in the original image; setting an upper limit conversion function which continuously monotonically increases with respect to the lightness, and determines an output upper limit of lightness conversion; setting a lower limit conversion function which continuously monotonically increases with respect to the lightness, and determines an output lower limit of lightness conversion; calculating upper and lower limit values (upper and lower limit conversion function of lightness of the pixel to be converted); calculating a ratio for setting a value between the upper limit value and the lower limit value according to lightness of each pixel in the local area; and calculating converted lightness of a pixel for which the lightness is converted based on the upper limit value, the lower limit value and the ratio.

Abstract: Converting lightness of each pixel even for images having continuous lightness includes: setting a local area around a pixel for which lightness is converted, in the original image; setting an upper limit conversion function which continuously monotonically increases with respect to the lightness, and determines an output upper limit of lightness conversion; setting a lower limit conversion function which continuously monotonically increases with respect to the lightness, and determines an output lower limit of lightness conversion; calculating upper and lower limit values (upper and lower limit conversion function of lightness of the pixel to be converted); calculating a ratio for setting a value between the upper limit value and the lower limit value according to lightness of each pixel in the local area; and calculating converted lightness of a pixel for which the lightness is converted based on the upper limit value, the lower limit value and the ratio.

Abstract: In an image processing technology, an original image is inputted by accepting an input of an original image to be image-processed; a local area is set, with a pixel of which brightness is to be converted being a center of the local area, from the original image; a local histogram relating to brightness of the local area is calculated; a local cumulative histogram is calculated by accumulating the local histogram; first and second monotone increasing functions are determined, respectively, corresponding to cumulative frequency values in first and second classes of the local cumulative histogram; first and second weighting functions are determined, respectively, corresponding to the first and second monotone increasing functions; a conversion function relating to brightness of the pixel is produced from the first monotone increasing function weighted by the first weighting function and the second monotone increasing function weighted by the second weighting function; and the brightness of the pixel is then conv

Abstract: A digital signal delay measuring circuit for measuring a delay time of a digital signal of a scan-testable digital circuit inside a device to be tested is provided. The circuit includes: outputting means for outputting a delay time measuring signal as a digital signal; delay means for delaying a timing when a state of the delay time measuring signal is changed; and at least two signal holding means, each receiving the delay time measuring signal and holding the state of the delay time measuring signal at a holding-command input timing.

Abstract: In an image processing technology, an original image is inputted by accepting an input of an original image to be image-processed; a local area is set, with a pixel of which brightness is to be converted being a center of the local area, from the original image; a local histogram relating to brightness of the local area is calculated; a local cumulative histogram is calculated by accumulating the local histogram; first and second monotone increasing functions are determined, respectively, corresponding to cumulative frequency values in first and second classes of the local cumulative histogram; first and second weighting functions are determined, respectively, corresponding to the first and second monotone increasing functions; a conversion function relating to brightness of the pixel is produced from the first monotone increasing function weighted by the first weighting function and the second monotone increasing function weighted by the second weighting function; and the brightness of the pixel is then conv

Abstract: A digital signal delay measuring circuit for measuring a delay time of a digital signal of a scan-testable digital circuit inside a device to be tested is provided. The circuit includes: outputting means for outputting a delay time measuring signal as a digital signal; delay means for delaying a timing when a state of the delay time measuring signal is changed; and at least two signal holding means, each receiving the delay time measuring signal and holding the state of the delay time measuring signal at a holding-command input timing. The holding-command input timing is identical between the at least two signal holding means, the timing when the state of the delay time measuring signal input to each of the signal holding means is changed is different depending on the delay means, and the delay time is obtained based on a difference in the state of the delay time measuring signal held by each of the signal holding means.

Abstract: An image evaluation circuit is connected to an image compression circuit and an image extension circuit. In the image evaluation circuit, original image data and extended image data reproduced from compressed image data are compared in each block pixel by pixel to generate block noise. The comparison is carried out twice to provide two block noises by two compression factors, and an optimum compression factor is determined in accordance with the two compression factors and the two block noises.