Abstract: Methods of optical communication and optical communication systems are described. According to a first aspect, a method of optical communication includes providing an optical signal and providing a plurality of data signals. This aspect also includes passing a plurality of desired portions of the optical signal using a plurality of respective optical modulators, the desired portions individually having at least one predefined wavelength. The method also includes optically modulating the desired portions of the optical signal using the respective optical modulators and responsive to respective ones of the data signals and outputting the desired portions of the optical signal to an optical communication medium after the modulating.

Abstract: Pressure-actuated bi-stable optical switching is provided. In this regard, a pressure-actuated bi-stable optical switch includes an optical path and a cavity intersecting the optical path. The cavity defines a first position along the optical path and a second position displaced from the optical path. An index-matching liquid, which exhibits an index of refraction closer to an index of refraction of the optical path than to that of a vacuum, is arranged within the cavity. A pressure generator generates pressure that selective moves the liquid between the first and second positions. Additionally, a potential profile maintains the liquid in the one of the first and second positions to which it was most recently moved while the pressure generator is not generating pressure. Methods, systems and other switches also are provided.

Abstract: Systems and methods of monitoring thin film deposition are described. In one aspect, a thin film deposition sensor includes an acoustical resonator (e.g., a thin film bulk acoustical resonator) that has an exposed surface and is responsive to thin film material deposits on the exposed surface. A substrate clip may be configured to attach the thin film deposition sensor to a substrate. A transceiver circuit may be configured to enable the thin film deposition sensor to be interrogated wirelessly. A method of monitoring a thin film deposition on a substrate also is described.

Abstract: Systems and methods of monitoring thin film deposition are described. In one aspect, a thin film deposition sensor includes an acoustical resonator (e.g., a thin film bulk acoustical resonator) that has an exposed surface and is responsive to thin film material deposits on the exposed surface. A substrate clip may be configured to attach the thin film deposition sensor to a substrate. A transceiver circuit may be configured to enable the thin film deposition sensor to be interrogated wirelessly. A method of monitoring a thin film deposition on a substrate also is described.

Abstract: Pressure-actuated bi-stable optical switching is provided. In this regard, a pressure-actuated bi-stable optical switch includes an optical path and a cavity intersecting the optical path. The cavity defines a first position along the optical path and a second position displaced from the optical path. An index-matching liquid, which exhibits an index of refraction closer to an index of refraction of the optical path than to that of a vacuum, is arranged within the cavity. A pressure generator generates pressure that selective moves the liquid between the first and second positions. Additionally, a potential profile maintains the liquid in the one of the first and second positions to which it was most recently moved while the pressure generator is not generating pressure. Methods, systems and other switches also are provided.

Abstract: Methods of optical communication and optical communication systems are described. According to a first aspect, a method of optical communication includes providing an optical signal and providing a plurality of data signals. This aspect also includes passing a plurality of desired portions of the optical signal using a plurality of respective optical modulators, the desired portions individually having at least one predefined wavelength. The method also includes optically modulating the desired portions of the optical signal using the respective optical modulators and responsive to respective ones of the data signals and outputting the desired portions of the optical signal to an optical communication medium after the modulating.

Abstract: Systems and methods of monitoring thin film deposition are described. In one aspect, a thin film deposition sensor includes an acoustical resonator (e.g., a thin film bulk acoustical resonator) that has an exposed surface and is responsive to thin film material deposits on the exposed surface. A substrate clip may be configured to attach the thin film deposition sensor to a substrate. A transceiver circuit may be configured to enable the thin film deposition sensor to be interrogated wirelessly. A method of monitoring a thin film deposition on a substrate also is described.

Abstract: Systems and methods of monitoring thin film deposition are described. In one aspect, a thin film deposition sensor includes an acoustical resonator (e.g., a thin film bulk acoustical resonator) that has an exposed surface and is responsive to thin film material deposits on the exposed surface. A substrate clip may be configured to attach the thin film deposition sensor to a substrate. A transceiver circuit may be configured to enable the thin film deposition sensor to be interrogated wirelessly. A method of monitoring a thin film deposition on a substrate also is described.

Abstract: The present invention provides a vertical cavity surface emitting laser having high gain and high reflectivity in the desired wavelength range and good thermal and electrical conductivity. The laser structure is comprised of a first mirror region, a second mirror region, and an active region positioned between the first and second mirror regions. Unlike, prior VCSELs, the active region is fused to both the first mirror region and the second mirror region. This allows the laser designer to optimize laser performance for the desired wavelength range by allowing the choice of different materials for the first mirror region, the second mirror region, and the active region.

Abstract: A method of precisely mounting a planar optical component on a mounting member includes the step of placing a plurality of balls on the mounting member to precisely define a geometric plane. The planar optical component is then placed against each of the balls on the mounting member such that the planar optical component is along the defined geometric plane on the mounting member. In addition, the planar optical component can also be mounted on the mounting member by first forming a groove in the mounting member. An end of the planar optical component is then shaped to match that of at least one wall of the groove. The planar optical component can then be placed in the groove such that the shaped end of the planar optical component is placed against the wall of the groove.

Abstract: A switch for selectively coupling light from an input optical fiber to a selected one of a plurality of output optical fibers. The switch includes a first carriage having one end of the input optical fiber attached thereto and a second carriage having the output optical fibers attached thereto such that one end of each of the output optical fiber lies between first and second distances with respect to the end of the input optical fiber when the output optical fiber is aligned with the input optical fiber. A lens that is fixed with respect to the end of the input optical fiber images light leaving the input optical fiber onto a plane lying between the first and second distances from the end of the input optical fiber. In one embodiment of the present invention, an encoder is integrated into the first and second carriages. The encoder includes an encoding input optical fiber having one end attached to the first carriage, the encoding input optical fiber being a single mode optical fiber.

Abstract: Method for deposit of a p type dopant from a dopant layer into a predetermined region of a III-V semiconductor layer or multiple layers. The p type dopant is deposited in very high concentration in a semiconductor layer adjacent to the predetermined region. A second semiconductor layer, doped with a lower concentration of an n type dopant, is later deposited so that the high concentration p type dopant layer lies between the predetermined region and the n type dopant layer. The p type dopant is diffused into the predetermined region by thermally driven diffusion, which may be carried out at a lower temperature or for a shorter diffusion time interval than with conventional diffusion, and p type dopant diffusion may extend over greater distances.