Abstract: The present applicant has discovered that one can make a surface emitting laser with enhanced operating characteristics by etching away the outer reflector stack peripheral to the intended active area and protecting the reflector stack mesa remaining over the active area by in situ metalization in high vacuum. The active area can be isolated, as by ion implantation, providing an electrical path through the active region free of the outer reflector stack. The result is a surface emitting laser having reduced series resistance. The device lases at lower voltage and provides an enhanced intensity of optical output as compared with conventional planar devices.

Abstract: The present applicants have discovered that one can make a surface emitting laser with enhanced optical confinement and improved heat sinking characteristics by etching away portions of the growth layers peripheral to the intended laser cavity and regrowing peripheral regions of material having a lower index of refraction than the active region. Using low damage etching and either in situ regrowth or hydrogen plasma cleaning followed by regrowth, a surface emitting laser having enhanced optical isolation and heat sinking characteristics can be made.