Abstract: Embodiments provided herein describe systems and methods for aligning sputtering sources, such as in a substrate processing tool. The substrate processing tool includes at least one sputtering source and a device. Each of sputtering sources includes a target having a central axis. The device has an axis and is detachably coupled to the at least one sputtering source. The device indicates to a user a direction in which the central axis of the target of the at least one sputtering source is oriented.

Abstract: Embodiments provided herein describe substrate processing tools. The substrate processing tools include a housing defining a processing chamber. A substrate support is coupled to the housing and configured to support a substrate within the processing chamber. The substrate has a central axis. A first annular member is moveably coupled to the housing and positioned within the processing chamber. The first annular member circumscribes the central axis of the substrate. A second annular member is moveably coupled to the housing and positioned within the processing chamber. The second annular member circumscribes the central axis of the substrate. Movement of the first annular member and the second annular member relative to the housing changes a flow of processing fluid through the processing chamber.

Abstract: A combinatorial processing chamber is provided. The processing chamber includes a substrate support rotatable around a central axis. The substrate support has a plurality of subsections operable to be isolated from each other. The plurality of subsections has a rotatable support cell independently controllable from the substrate support. A vacuum source in fluid communication with a gap defined around a peripheral region of the substrate support is provided. The vacuum source is in fluid communication with a peripheral region of each rotatable support cell of the plurality of subsections.

Abstract: A sputter source is provided. The sputter source includes a shaft extending through a central region of the sputter source. A first end of the shaft is coupled to a drive and a second end of the shaft is coupled to a bottom plate. A first plate having a ramped surface is included where the first plate is stationary. A second plate having a ramped surface is provided where the second plate is disposed above the first plate such that portions of the ramped surfaces contact each other. The second plate is coupled to the shaft, wherein the second plate is operable to rotate and move axially as the shaft rotates in a first direction and wherein the second plate is operable to remain stationary as the shaft rotates in a second direction.

Abstract: Methods and apparatuses for combinatorial processing using a remote plasma source are disclosed. The apparatus includes a remote plasma source and an inner chamber enclosing a substrate support. An aperture is operable to provide plasma exposure to a site-isolated region on a substrate. A transport system moves the substrate support and is capable of positioning the substrate such that the site-isolated region can be located anywhere on the substrate. Barriers and a gas purge system operate to provide site-isolation. Plasma exposure parameters can be varied in a combinatorial manner. Such parameters include source gases for the plasma generator, plasma filtering parameters, exposure time, gas flow rate, frequency, plasma generator power, plasma generation method, chamber pressure, substrate temperature, distance between plasma source and substrate, substrate bias voltage, or combinations thereof.

Abstract: An apparatus for combinatorial RF biasing at selectable spots includes one or more RF biasing elements that can be moved to or selectively activated to provide an RF hot spot. The RF hot spot may be selectively provided at various locations of a substrate such as a wafer undergoing combinatorial processing. An RF biasing element may be moved, via a movable arm, to a select location. Alternatively or additionally, more than one RF biasing element may be provided in an array so that an RF biasing element corresponding to the select location is activated. The apparatus may be coupled to or disposed within a substrate support such as a chuck such that the apparatus can operate with a combinatorial processing apparatus.

Abstract: Induction heating systems and methods for combinatorial heating of a substrate are disclosed. The induction heating system includes a susceptor segmented into multiple regions (e.g., two to 20 regions) that are separated from one another by a reflective channel that is purged with a liquid (e.g., gas or liquid). The induction heating system includes multiple induction coils, each induction coil corresponding to one of the susceptor regions or segments. The distance between each induction coil and the susceptor region can be varied using an independent lift for each region. The relative distance between the coils and the corresponding susceptor regions is used to vary the temperature of a substrate so that different regions of the substrate can be independently heated to different temperatures.

Abstract: In some embodiments of the present invention, a shield is provided wherein the shield comprises a ceramic insulation material. The ceramic insulation material fills the space between the shield and the substrate surface and maintains a gap of less than about 2 mm and advantageously, less than about 1 mm. The shield may further be connected to ground through a low-pass filter operable to prevent the loss of high frequency RF power through the shield to ground but allow the dissipation of charge from the shield to ground through a low frequency or DC signal. In some embodiments, the ceramic insulating material further comprises a removable ceramic insert. The ceramic insert may be used to select the size of the aperture. The ceramic insert further comprises a slot operable to isolate the bottom lip of the ceramic insert from the upper portion for a PVD deposition.

Abstract: An inductively coupled heating system having a segmented susceptor is disclosed. The segmented susceptor includes two or more segments, each segment having a side edge that is mateable with a side edge of another segment. The two mated side edges form an interface, increasing eddy currents near the interface. An inductively coupled heating system having a susceptor with multiple doped regions is also disclosed.

Abstract: A protective chuck is magnetically levitated on a substrate with a gas layer between the bottom surface of the protective chuck and the substrate surface. The gas layer protects a surface region of the substrate against a fluid layer covering the remaining of the substrate surface without contacting the substrate, reducing or eliminating potential damage to the substrate surface. The magnetically levitated protective chuck can enable combinatorial processing of a substrate, providing multiple isolated processing regions on a single substrate with different material and processing conditions.

Abstract: A substrate clamped to a stage is moved in a rastering motion in a site-isolated deposition chamber. The raster pattern may be a radial pattern, predetermined X-Y pattern, horizontal/vertical pattern or random (free-form) pattern. The chamber includes a sputter source to generate the sputtered material which is delivered through an aperture positioned over the substrate. By moving the substrate in a rastering motion, the sputtered material is deposited more equally and uniformly.

Abstract: In one aspect of the invention, a process chamber is provided. The chamber includes a plurality of sputter guns with a target affixed to one end of each of the sputter guns. Each of the plurality of sputter guns is coupled to a first power source. The first power source is operable to provide a pulsed power supply to each of the plurality of sputter guns. The pulsed power supply has a duty cycle that is less than 30%. A substrate support disposed at a distance from the plurality of sputter guns is included. The substrate support is coupled to a second power source. The second power source is operable to bias a substrate disposed on the substrate support, wherein the duty cycle of the second power source is synchronized with a duty cycle of the first power source. A method of performing a deposition process is also included.

Abstract: A sputter gun is provided in the embodiments contained herein. The sputter gun includes an impeller disposed within a backside portion of an opening within a housing of the sputter gun, the housing including an inlet directing fluid to rotate the impeller around an axis. A plate is disposed next to the impeller, the plate has openings extending therethrough, the openings enabling the fluid access to a backside portion of the opening within the housing. A plurality of magnets is disposed within the front side of the plate and extending from a surface of the plate such that as the impeller rotates with the plurality of magnets. A thermally conductive membrane extends across a front surface of the front portion of the opening, wherein the fluid contacts the thermally conductive membrane prior to exiting the opening within the housing. A method of performing a deposition process is also included.

Abstract: A multi-zone, combinatorial, single wafer showerhead is used to concurrently develop hardware, materials, unit processes, and unit process sequences. The multi-zone, combinatorial, single wafer showerhead utilizes showerhead pucks to perform process sequences on isolated regions of a single substrate. The showerhead pucks are designed so that they are easily interchangeable to allow the characterization of the interaction between hardware characteristics, process parameters, and their influence on the result of the process sequence.

Abstract: A dual purpose processing chamber is provided. The dual purpose processing chamber includes a lid disposed over a top surface of a processing region of the processing chamber. A plurality of sputter guns with a target affixed to one end of each of the sputter guns is included. The plurality of sputter guns extend through the lid of the process chamber, wherein each of the plurality of sputter guns is oriented such that a surface of the target affixed to each gun is angled toward an outer periphery of a substrate. In another embodiment, each of the sputter guns is affixed to an extension arm and the extension arm is configured to enable movement in four degrees of freedom. A method of performing a deposition process is also included.

Abstract: A system for processing a substrate is provided. The system includes a power source for providing a current, and an RF coil which generates a magnetic field when supplied with the current from the power source. The system further includes a susceptor for supporting the substrate. The susceptor is inductively heated by the magnetic field. The heat from the susceptor is transferred to the substrate so as to heat the substrate.

Abstract: An end effector for a transport robot arm for a wafer wet cleaning system has an arm with a chuck at an end of the arm to support a wafer. The chuck also includes a cavity to spray a bottom surface of the wafer with a cleaning fluid. At least two branches extend from the chuck away from the arm with a roller at the end of each branch to hold the wafer. A spray bar is coupled to the arm. The spray bar is configured to hold and spray a top surface of the wafer with the cleaning fluid.

Abstract: An end effector for a transport robot arm for a wafer wet cleaning system has an arm with a chuck at an end of the arm to support a wafer. The chuck also includes a cavity to spray a bottom surface of the wafer with a cleaning fluid. At least two branches extend from the chuck away from the arm with a roller at the end of each branch to hold the wafer. A spray bar is coupled to the arm. The spray bar is configured to hold and spray a top surface of the wafer with the cleaning fluid.

Abstract: An apparatus for leveling and centering a catch-cup chamber to a diverter chamber of a semiconductor processing chamber is described. In one embodiment, the apparatus has a frame with branches. A coupler is mounted to the end of each branch. A measuring device is mounted to each branch. The apparatus is placed in the diverter. The measuring device measures a distance from a branch to a top surface of the catch-cup chamber.