Abstract: A method and apparatus for depositing a conformal dielectric layer employing a dep-etch technique features selectively reducing the flow of deposition gases into a process chamber where a substrate having a stepped surface to be covered by the conformal dielectric layer is disposed. By selectively reducing the flow of deposition gases into the process chamber, the concentration of a sputtering gas, from which a plasma is formed, in the process chamber is increased without increasing the pressure therein. It is preferred that the flow of deposition gases be periodically terminated so as to provide a sputtering gas concentration approaching 100%. In this fashion, the etch rate of a conformal dielectric layer having adequate gap-filling characteristics may be greatly increased, while allowing an increase in the deposition rate of the same.

Abstract: A layer of reduced stress is formed on a substrate using an HDP-CVD system by delaying or interrupting the application of capacitively coupled RF energy. The layer is formed by introducing a process gas into the HDP system chamber and forming a plasma from the process gas by the application of RF power to an inductive coil. After a selected period, a second layer of the film is deposited by maintaining the inductively-coupled plasma and biasing the plasma toward the substrate to enhance the sputtering effect of the plasma. In a preferred embodiment, the deposited film is a silicon oxide film, and biasing is performed by application of capacitively coupled RF power from RF generators to a ceiling plate electrode and wafer support electrode.

Abstract: A method and apparatus for depositing a conformal dielectric layer employing a dep-etch technique features selectively reducing the flow of deposition gases into a process chamber where a substrate having a stepped surface to be covered by the conformal dielectric layer is disposed. By selectively reducing the flow of deposition gases into the process chamber, the concentration of a sputtering gas, from which a plasma is formed, in the process chamber is increased without increasing the pressure therein. It is preferred that the flow of deposition gases be periodically terminated so as to provide a sputtering gas concentration approaching 100%. In this fashion, the etch rate of a conformal dielectric layer having adequate gap-filling characteristics may be greatly increased, while allowing an increase in the deposition rate of the same.

Abstract: A process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber after depositing a layer of material over a substrate disposed in the chamber. In one embodiment the process comprises transferring the substrate out of the chamber; flowing a first gas into the substrate processing chamber and forming a plasma within the chamber from the first gas in order to heat the chamber; and thereafter, extinguishing the plasma, flowing an etchant gas into a remote plasma source, forming reactive species from the etchant gas and transporting the reactive species into the substrate processing chamber to etch the unwanted deposition build-up.

Abstract: A method and apparatus for depositing a conformal dielectric layer employing a dep-etch technique features selectively reducing the flow of deposition gases into a process chamber where a substrate having a stepped surface to be covered by the conformal dielectric layer is disposed. By selectively reducing the flow of deposition gases into the process chamber, the concentration of a sputtering gas, from which a plasma is formed, in the process chamber is increased without increasing the pressure therein. It is preferred that the flow of deposition gases be periodically terminated so as to provide a sputtering gas concentration approaching 100%. In this fashion, the etch rate of a conformal dielectric layer having adequate gap-filling characteristics may be greatly increased, while allowing an increase in the deposition rate of the same.

Abstract: A method and apparatus for depositing a conformal dielectric layer employing a dep-etch technique features selectively reducing the flow of deposition gases into a process chamber where a substrate having a stepped surface to be covered by the conformal dielectric layer is disposed. By selectively reducing the flow of deposition gases into the process chamber, the concentration of a sputtering gas, from which a plasma is formed, in the process chamber is increased without increasing the pressure therein. It is preferred that the flow of deposition gases be periodically terminated so as to provide a sputtering gas concentration approaching 100%. In this fashion, the etch rate of a conformal dielectric layer having adequate gap-filling characteristics may be greatly increased, while allowing an increase in the deposition rate of the same.

Abstract: Embodiments of the present invention include a method of depositing an improved seasoning film. In one embodiment the method includes, prior to performing a substrate processing operation, forming a layer of silicon over an interior surface of the substrate processing chamber as opposed to a layer of silicon oxide. In certain embodiments, the layer of silicon comprises at least 70% atomic silicon, is deposited from a high density silane (SinH2n+2) process gas and/or is deposited from a plasma having a density of at least 1×1011 ions/cm3.

Abstract: A method of operating a substrate processing chamber. In one embodiment the method includes processing one or more substrates in the substrate processing chamber and subsequently cleaning the chamber using a dry cleaning process. This substrate processing and dry cleaning sequence is then repeated multiple times before chamber is further cleaned by flowing a cleaning gas into the chamber and forming a plasma within the chamber from the cleaning gas in an extended cleaning process. During the extended cleaning process the plasma is maintained within the chamber for a total of at least 5 minutes before the chamber is reused to process a substrate.

Abstract: A method for depositing a conformal dielectric layer employing a dep-etch technique features selectively decreasing the deposition gas present in a process chamber where a substrate to be covered by the conformal dielectric layer is disposed. By selectively decreasing the deposition gas present in the process chamber, the concentration of a sputtering gas, from which a plasma is formed, in the process chamber is increased. It is preferred that the flow of deposition gases be periodically terminated so as to provide a sputtering gas concentration approaching 100%. In this fashion, the etch rate of a conformal dielectric layer having adequate gap-filling characteristics may be greatly increased, while allowing an increase in the deposition rate of the same.

Abstract: A substrate processing system and a computer-readable storage medium for directing operation of a substrate processing system are provided for preparing a substrate for processing. The substrate processing system has a chamber with a substrate receiving portion and systems equipped to implement plasma processes. The computer-readable storage medium has a program that directs operation of the systems. The substrate is positioned within the chamber in a location not on the substrate receiving portion. A gaseous flow is provided to the chamber, from which a plasma is struck to heat the substrate. After the substrate has been heated, it is moved to the substrate receiving portion for processing.

Abstract: Methods are provided for identifying root causes of particle issues and for developing particle-robust process recipes in plasma deposition processes. The presence of in situ particles within the substrate processing system is detected over a period of time that spans multiple distinct processing steps in the recipe. The time dependence of in situ particle levels is determined from these results. Then, the processing steps are correlated with the time dependence to identify relative particle levels with the processing steps. This information provides a direct indication of which steps result in the production of particle contaminants so that those steps may be targeted for modification in the development of particle recipes.

Abstract: Embodiments of the present invention include a method of depositing an improved seasoning film. In one embodiment the method includes, prior to performing a substrate processing operation, forming a layer of silicon over an interior surface of the substrate processing chamber as opposed to a layer of silicon oxide. In certain embodiments, the layer of silicon comprises at least 70% atomic silicon, is deposited from a high density silane (SinH2n+2) process gas and/or is deposited from a plasma having a density of at least 1×1011 ions/cm3.

Abstract: A method of operating a substrate processing chamber. In one embodiment the method includes processing one or more substrates in the substrate processing chamber and subsequently cleaning the chamber using a dry cleaning process. This substrate processing and dry cleaning sequence is then repeated multiple times before chamber is further cleaned by flowing a cleaning gas into the chamber and forming a plasma within the chamber from the cleaning gas in an extended cleaning process. During the extended cleaning process the plasma is maintained within the chamber for a total of at least 5 minutes before the chamber is reused to process a substrate.

Abstract: Embodiments of the present invention include a method of depositing an improved seasoning film. In one embodiment the method includes, prior to performing a substrate processing operation, forming a layer of silicon over an interior surface of the substrate processing chamber as opposed to a layer of silicon oxide. In certain embodiments, the layer of silicon comprises at least 70% atomic silicon, is deposited from a high density silane (SinH2n+2) process gas and/or is deposited from a plasma having a density of at least 1×1011 ions/cm3.

Abstract: A trench-fill material is deposited to fill a trench in a substrate disposed in a process chamber. An inert gas is introduced into the process chamber and a plasma is formed to heat the substrate to a preset temperature, which is typically the temperature at which deposition of the trench-fill material is to take place. The plasma is terminated upon reaching the preset temperature for the substrate. A process gas is then flowed into the process chamber without plasma excitation until the process gas flow and distribution achieve a generally steady state in the process chamber. A plasma is then formed to deposit the trench-fill material on the surface of the substrate and fill the trench. By establishing generally steady state conditions in the chamber prior to deposition, transient effects are reduced and more uniform deposition of the trench-fill material is obtained.

Abstract: Method and apparatus for depositing an amorphous silicon film on a substrate using a high density plasma chemical vapor deposition (HDP-CVD) technique is provided. The method generally comprises positioning a substrate in a processing chamber, introducing an inert gas into the processing chamber, introducing a silicon source gas into the processing chamber generating a high density plasma, and depositing the amorphous silicon film. The amorphous silicon film is deposited at a substrate temperature 500° C. or less. The amorphous silicon film may then be annealed to improve film properties.

Abstract: A method is provided for preparing a substrate for processing in a chamber that has a substrate receiving portion. The substrate is positioned within the chamber in a location not on the substrate receiving portion. A gaseous flow is provided to the chamber, from which a plasma is struck to heat the substrate. After the substrate has been heated, it is moved to the substrate receiving portion for processing.

Abstract: An apparatus for depositing a conformal dielectric layer employing a dep-etch technique features selectively reducing the flow of deposition gases into a process chamber where a substrate having a stepped surface to be covered by the conformal dielectric layer is disposed. By selectively reducing the flow of deposition gases into the process chamber, the concentration of a sputtering gas, from which a plasma is formed, in the process chamber is increased without increasing the pressure therein. It is preferred that the flow of deposition gases be periodically terminated so as to provide a sputtering gas concentration approaching 100%. In this fashion, the etch rate of a conformal dielectric layer having adequate gap-filling characteristics may be greatly increased, while allowing an increase in the deposition rate of the same.

Abstract: Method for processing gallium arsenide (GaAs) wafers is provided. One embodiment of the invention provides a method for processing a substrate comprising disposing the substrate on a substrate support member in a high density plasma chemical vapor deposition chamber, depositing a film onto a surface of the substrate, and after deposition of the film, flowing a heat transfer gas in one or more channels on a substrate support surface of the substrate support member.

Abstract: A process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber after depositing a layer of material over a substrate disposed in the chamber. In one embodiment the process comprises transferring the substrate out of the chamber; flowing a first gas into the substrate processing chamber and forming a plasma within the chamber from the first gas in order to heat the chamber; and thereafter, extinguishing the plasma, flowing an etchant gas into a remote plasma source, forming reactive species from the etchant gas and transporting the reactive species into the substrate processing chamber to etch the unwanted deposition build-up.