Abstract: A semiconductor device package includes a multi-layer substrate including a bottom layer and a top layer. One or more dies are mounted on and electrically coupled to the top layer of the substrate. An electromagnetic interference (EMI) shield encapsulates the substrate and the semiconductor dies. A first plurality of conductive stubs is positioned around edges of the top layer of the substrate. Each of the conductive stubs includes an edge portion having a first thickness and in contact with the EMI shield. A second plurality of conductive stubs is positioned around edges of the bottom layer of the substrate. Each of the second plurality of conductive stubs includes an edge portion having a second thickness less than the first thickness and in contact with the EMI shield.

Abstract: A semiconductor package includes a substrate having a top planar surface and a semiconductor die mounted on the top planar surface of the substrate. Bond wires electrically connect the semiconductor die to the substrate. Flow control dams are integrally formed with the top planar surface of the substrate and each flow control dam protrudes from the top planar surface of the substrate at a location proximate to the bond wires. The flow control dams reduce the occurrence of wire sweep in the bond wires electrically connected to the substrate and semiconductor die.

Abstract: A Printed Circuit Board (PCB) or substrate has a bump pad layer and a separate trace metal layer. The bump pad layer substantially covers or overlays the trace metal layer. A first surface of a bump pad in the bump pad layer is electrically coupled to a trace in the trace metal layer. A second surface of the bump pad in the bump pad layer extends above a surface of the bump pad layer. When a component is mounted on the substrate during a component mounting process, a pillar or other electrical connection mechanism of the component is electrically coupled to the bump pad without the risk of solder non-wetting and/or the formation of solder bridges between traces and bump pads on the substrate.

Abstract: A semiconductor device package includes a multi-layer substrate including a bottom layer and a top layer. One or more dies are mounted on and electrically coupled to the top layer of the substrate. An electromagnetic interference (EMI) shield encapsulates the substrate and the semiconductor dies. A first plurality of conductive stubs is positioned around edges of the top layer of the substrate. Each of the conductive stubs includes an edge portion having a first thickness and in contact with the EMI shield. A second plurality of conductive stubs is positioned around edges of the bottom layer of the substrate. Each of the second plurality of conductive stubs includes an edge portion having a second thickness less than the first thickness and in contact with the EMI shield.

Abstract: A semiconductor package includes a substrate having a top planar surface and a semiconductor die mounted on the top planar surface of the substrate. Bond wires electrically connect the semiconductor die to the substrate. Flow control dams are integrally formed with the top planar surface of the substrate and each flow control dam protrudes from the top planar surface of the substrate at a location proximate to the bond wires. The flow control dams reduce the occurrence of wire sweep in the bond wires electrically connected to the substrate and semiconductor die.

Abstract: A semiconductor device package includes a substrate, a first heat-generating component positioned on a surface of the substrate, an encapsulant at least partially encapsulating the first heat-generating component, and one or more channels extending through a portion of the encapsulant toward the first heat-generating component. Each of the one or more channels contains a thermally conductive material having a thermal conductivity greater than a thermal conductivity of the encapsulant.

Abstract: A semiconductor device package includes a substrate, a first heat-generating component positioned on a surface of the substrate, an encapsulant at least partially encapsulating the first heat-generating component, and one or more channels extending through a portion of the encapsulant toward the first heat-generating component. Each of the one or more channels contains a thermally conductive material having a thermal conductivity greater than a thermal conductivity of the encapsulant.