Abstract: Exemplary semiconductor processing methods may include providing a first silicon-containing precursor and a second silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The first silicon-containing precursors may include Si—O bonding. The methods may include forming a plasma of the first silicon-containing precursor and the second silicon-containing precursor in the processing region. The methods may include forming a layer of silicon-containing material on the substrate. The layer of silicon-containing material may be characterized by a dielectric constant less than or about 3.0.

Abstract: Exemplary semiconductor processing methods may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma of the silicon-containing precursor in the processing region. The plasma may be at least partially formed by a pulsing RF power operating at less than or about 2,000 W. The methods may include forming a layer of silicon-containing material on the substrate. The layer of silicon-containing material may be characterized by a dielectric constant less than or about 3.0.

Abstract: Semiconductor packages and methods for metallization of non-conducting surfaces for fabricating semiconductor packages are provided. In an embodiment, the method includes depositing an adhesion layer on a polymeric surface by an electroless deposition process. The polymeric surface defines a sidewall of a through-hole via and the adhesion layer comprises a cobalt alloy or a nickel alloy. The method further includes depositing a copper seed layer on the adhesion layer by an immersion plating process. The copper seed layer displaces a portion of the adhesion layer. The method further includes filling the through-hole via with a copper containing layer.