Abstract: A remote maintenance system includes a maintenance management apparatus connected to a user apparatus and a communication relay apparatus connected to a remote-controlled apparatus. The maintenance management apparatus transmits, to the communication relay apparatus, message data whose destination is unique identification information of a mobile communication network assigned in advance to the communication relay apparatus. The communication relay apparatus notifies the maintenance management apparatus of an IP address that is dynamically assigned to itself upon reception of the message data. The maintenance management apparatus transmits, to the communication relay apparatus, information on remote operation received from the user apparatus whose destination is the notified IP address. The communication relay apparatus relays, to the remote-controlled apparatus, the information on the remote control received from the maintenance management apparatus.

Abstract: A remote maintenance system includes a maintenance management apparatus connected to a user apparatus and a communication relay apparatus connected to a remote-controlled apparatus. The maintenance management apparatus transmits, to the communication relay apparatus, message data whose destination is unique identification information of a mobile communication network assigned in advance to the communication relay apparatus. The communication relay apparatus notifies the maintenance management apparatus of an IP address that is dynamically assigned to itself upon reception of the message data. The maintenance management apparatus transmits, to the communication relay apparatus, information on remote operation received from the user apparatus whose destination is the notified IP address. The communication relay apparatus relays, to the remote-controlled apparatus, the information on the remote control received from the maintenance management apparatus.

Abstract: An etching chamber includes a chamber body including a flow channel and an opening mounted the substrate to be etched and the opening communicating with the flow channel and a sealing member provided in the periphery of the opening and configured to close a gap between the substrate and the chamber body when the substrate is mounted in the opening, wherein the sealing member includes a first groove provided on an upper surface of the sealing member which comes into abutment with the substrate when the substrate is mounted in the opening, a second groove provided on a sealing member bottom surface on a side opposite from the upper surface of the sealing member, and at least one communicating hole communicating with the first groove and the second groove.

Abstract: A method for processing a silicon wafer is provided. The method includes allowing an etchant to flow along a surface of the silicon wafer to form a line in which a plurality of apertures are arranged in a flow direction of the etchant from an upstream side to a downstream side. The apertures arranged in the line include a first aperture formed on the most upstream side and a second aperture formed downstream of the first aperture in the flow direction of the etchant. The first aperture and the second aperture are subjected to different processes after being formed.

Abstract: A method for producing a liquid-discharge-head substrate includes a step of preparing a silicon substrate including, at a front-surface side of the silicon substrate, an energy generating element; a step of forming a first etchant introduction hole on the front-surface side of the silicon substrate; a step of supplying a first etchant into the first etchant introduction hole formed on the front-surface side of the silicon substrate, and supplying a second etchant to a back-surface side of the silicon substrate; a step of stopping the supply of the second etchant; and a step of, after the supply of the second etchant has been stopped, forming a liquid supply port extending through front and back surfaces of the silicon substrate by the supply of the first etchant.

Abstract: Provided is a processing method for an ink jet head substrate, including: forming a barrier layer on a substrate and forming a seed layer on the barrier layer; forming a resist film on the seed layer and patterning the resist film so that the patterned resist film corresponds to a pad portion for electrically connecting an ink jet head to an outside of the ink jet head; forming the pad portion in an opening of the patterned resist film; removing the resist film; subjecting the substrate to anisotropic etching to form an ink supply port; removing the barrier layer and the seed layer; and performing laser processing from a surface of the substrate.

Abstract: A substrate for a liquid ejection head, including: forming a sacrifice layer on a first surface of a silicon substrate in a region in which a liquid supply port is to open, the sacrifice layer containing aluminum which is selectively etched with respect to the silicon substrate; forming an etching mask on a second surface which is a rear surface of the first surface of the silicon substrate, the etching mask having an opening corresponding to the sacrifice layer; a first etching step of etching the silicon substrate by using the etching mask as a mask and by using a first etchant containing 8 mass % or more and less than 15 mass % of tetramethylammonium hydroxide; and after the first etching step, a second etching step of removing the sacrifice layer by using a second etchant containing 15 mass % or more and 25 mass % or less of tetramethylammonium hydroxide.

Abstract: A method for processing a silicon wafer is provided, the method including allowing an etchant to flow along a surface of the silicon wafer to form a line in which a plurality of apertures are arranged in a flow direction of the etchant from an upstream side to a downstream side, wherein the apertures arranged in the line includes a first aperture formed on the most upstream side and a second aperture formed downstream of the first aperture in the flow direction of the etchant, and wherein the first aperture and the second aperture are subjected to different processes after being formed.

Abstract: A method of processing an inkjet head substrate includes, in series, a step of forming a barrier layer on a substrate and forming a seed layer on the barrier layer, a step of forming a resist film on the seed layer and patterning the resist film such that the resist film has an opening corresponding to a wiring section configured to drive ink discharge energy-generating elements, a step of forming the wiring section in the opening of the patterned resist film, a step of removing the resist film, a step of laser-processing a surface of the substrate, a step of forming an ink supply port by anisotropically etching the substrate, and a step of removing the barrier layer and the seed layer.

Abstract: A liquid composition used to carry out crystal anisotropic etching of a silicon substrate provided with an etching mask formed of a silicon oxide film with the silicon oxide film used as a mask includes cesium hydroxide, an alkaline organic compound, and water.

Abstract: The present invention is a method of manufacturing a liquid discharge head, which includes providing a substrate on which a solid member is disposed to surround a region that becomes the flow path, and a metal layer made of a metal or a metal compound is disposed inside of the region, forming a mold made of a metal or a metal compound inside of the region, disposing a cover layer made of a resin to cover the solid member and the mold in contact with the solid member and the mold wherein the solid member and the metal are formed with a distance therebetween, and removing the mold to form the flow path.

Abstract: A method for producing a liquid-discharge-head substrate includes a step of preparing a silicon substrate including, at a front-surface side of the silicon substrate, an energy generating element; a step of forming a first etchant introduction hole on the front-surface side of the silicon substrate; a step of supplying a first etchant into the first etchant introduction hole formed on the front-surface side of the silicon substrate, and supplying a second etchant to a back-surface side of the silicon substrate; a step of stopping the supply of the second etchant; and a step of, after the supply of the second etchant has been stopped, forming a liquid supply port extending through front and back surfaces of the silicon substrate by the supply of the first etchant.

Abstract: A liquid composition used to carry out crystal anisotropic etching of a silicon substrate provided with an etching mask formed of a silicon oxide film with the silicon oxide film used as a mask includes cesium hydroxide, an alkaline organic compound, and water.

Abstract: A substrate for a liquid ejection head, including: forming a sacrifice layer on a first surface of a silicon substrate in a region in which a liquid supply port is to open, the sacrifice layer containing aluminum which is selectively etched with respect to the silicon substrate; forming an etching mask on a second surface which is a rear surface of the first surface of the silicon substrate, the etching mask having an opening corresponding to the sacrifice layer; a first etching step of etching the silicon substrate by using the etching mask as a mask and by using a first etchant containing 8 mass % or more and less than 15 mass % of tetramethylammonium hydroxide; and after the first etching step, a second etching step of removing the sacrifice layer by using a second etchant containing 15 mass % or more and 25 mass % or less of tetramethylammonium hydroxide.

Abstract: The present invention is a method of manufacturing a liquid discharge head, which includes providing a substrate on which a solid member that becomes a flow path wall member is disposed to surround a region that becomes a flow path, forming a mold made of a metal or a metal compound inside of the region, disposing a cover layer made of a resin to cover the solid member and the mold, and removing the mold to form the flow path.

Abstract: A liquid composition used to carry out crystal anisotropic etching of a silicon substrate provided with an etching mask formed of a silicon oxide film with the silicon oxide film used as a mask includes cesium hydroxide, an alkaline organic compound, and water.