Abstract: The automatic analyzer includes: a sample dispensing unit that dispenses a sample into a reaction vessel; a reagent dispensing unit that dispenses a reagent into the reaction vessel; a control unit that controls the sample dispensing unit and the reagent dispensing unit; and a measurement unit that measures a mixed solution of the sample and the reagent mixed in the reaction vessel. The reagent includes three types of reagents of: a first reagent that specifically binds to an antigen in the sample; a second reagent that specifically binds to a site different from that to which the first reagent binds with respect to the antigen and has a label to be detected by the measurement unit; and a third reagent that specifically binds to a site different from the binding site of the first reagent and the antigen and contains insoluble carriers.

Abstract: A printing method includes discharging ink to a substrate, heating a non-ink-discharged side of the substrate at T1, and heating an ink-discharged side of the substrate at T2, wherein the ink contains an organic solvent A (boiling point lower than 250 degrees C.), an organic solvent B (boiling point of 250 degrees C.), and a resin, where 0 degrees C. C?T2?T1?90 degrees C. is satisfied, the proportion (organic solvent A/ink) is 30 percent by mass or less, the proportion (organic solvent B/ink) is 1 to 3 percent by mass, the proportion (resin/ink) is 5 to 15 percent by mass, the ink has a viscosity of 8.0 to 11.0 mPa-s at 25 degrees C. and 5.5 to 11.0 mPa-s at 36 degrees C., and a 2.5 ?L ink droplet discharged to the substrate shrinks to 0.1 ?L within 10.0 seconds at 25 degrees C.

Abstract: An inkjet printing method including: discharging ink contained in an ink storage unit, from a nozzle of a nozzle forming surface of a discharging unit; and supplying the ink from the ink storage unit to the discharging unit. The ink includes specific components and satisfies a specific relation between dynamic surface tension and time. The supplying includes: forming a closed space by covering the nozzle forming surface with a lid member, and freely controlling a pressure between the discharging unit and the ink storage unit; and forming an open space by opening the lid member on the nozzle forming surface, and setting the pressure to be the same as atmospheric pressure. A negative pressure difference between the ink storage unit and the discharging unit is 70-120 mmAq before discharge of the ink, 30-80 mmAq during the discharging, and the former is equal to or greater than the latter.

Abstract: A printing method includes discharging ink to a substrate, heating a non-ink-discharged side of the substrate at T1, and heating an ink-discharged side of the substrate at T2, wherein the ink contains an organic solvent A (boiling point lower than 250 degrees C.), an organic solvent B (boiling point of 250 degrees C.), and a resin, where 0 degrees C. C?T2?T1?90 degrees C. is satisfied, the proportion (organic solvent A/ink) is 30 percent by mass or less, the proportion (organic solvent B/ink) is 1 to 3 percent by mass, the proportion (resin/ink) is 5 to 15 percent by mass, the ink has a viscosity of 8.0 to 11.0 mPa-s at 25 degrees C. and 5.5 to 11.0 mPa-s at 36 degrees C., and a 2.5 ?L ink droplet discharged to the substrate shrinks to 0.1 ?L within 10.0 seconds at 25 degrees C.

Abstract: The present invention addresses the subject of providing non-fried Chinese noodles with deterioration over time suppressed. The subject is solved by adding calcium monohydrogen phosphate hydrate to non-fried Chinese noodles to which sodium carbonate and/or potassium carbonate (kansui) has been added. The addition amount of the calcium monohydrogen phosphate hydrate relative to the addition amount of the sodium carbonate and/or potassium carbonate is preferably in the range of the following expression 1: 0.8X-2?Y?2X . . . (Expression 1) where X represents the addition amount (g) of the sodium carbonate and/or potassium carbonate based on 1 kg of a main raw material powder, and Y represents the addition amount (g) of the calcium monohydrogen phosphate hydrate based on 1 kg of the main raw material powder.

Abstract: An object of this disclosure is to provide a technique capable of suppressing decrease and deterioration of flavor and/or texture of a cereal processed food product over time after production as well as maintaining the flavor and/or the texture of the cereal processed food product. This disclosure further provides a technique capable of maintaining the flavor and/or the texture of a freshly made cereal processed food product even if the products are stored at room temperature or under a chilled state for a long period of time. This disclosure provides an improver for cereal processed food product containing maltol as a component (A) and at least one component selected from 5-Hydroxymethylfurfural, dimethyl sulfide, and 3-methylbutanal as a component (B).

Abstract: In this method for manufacturing a semiconductor element, a modified layer produced by subjecting a substrate (70) to mechanical polishing is removed by heating the substrate (70) under Si vapor pressure. An epitaxial layer formation step, an ion implantation step, an ion activation step, and a second removal step are then performed. In the second removal step, macro-step bunching and insufficient ion-implanted portions of the surface of the substrate (70) performed the ion activation step are removed by heating the substrate (70) under Si vapor pressure. After that, an electrode formation step in which electrodes are formed on the substrate (70) is performed.

Abstract: This invention provides a cooked-rice improver having flavor sustaining and/or flavor enhancement effects of cooked rice. The improver is obtained by mixing low-decomposition starch having a predetermined molecular weight and dextrin having a predetermined DE value at a predetermined ratio. This invention provides a cooked-rice improver flavor sustaining and/or flavor enhancement actions on cooked rice, and cooked rice produced by using the same. The cooked-rice improver contains low-decomposition starch having the molecular weight of 500,000 to 5,000,000 and dextrin having a DE value greater than one and equal to or lower than fifty at a ratio of 1:9 to 9:1 in a mass ratio.

Abstract: In this method for manufacturing a semiconductor element, a modified layer produced by subjecting a substrate (70) to mechanical polishing is removed by heating the substrate (70) under Si vapor pressure. An epitaxial layer formation step, an ion implantation step, an ion activation step, and a second removal step are then performed. In the second removal step, macro-step bunching and insufficient ion-implanted portions of the surface of the substrate (70) performed the ion activation step are removed by heating the substrate (70) under Si vapor pressure. After that, an electrode formation step in which electrodes are formed on the substrate (70) is performed.

Abstract: This method for treating a surface of a SiC substrate includes a first removal step in which a modified layer produced by subjecting the substrate (70) to mechanical polishing or chemical-mechanical polishing is removed by heating the substrate (70) under Si vapor pressure. A second removal step in which macro-step bunching occurred in an epitaxial layer (71) is removed by heating the substrate (70) under Si vapor pressure may also be performed. Since the etching rate can be varied, etching rate in the first removal step is high, so that the modified layer can be removed in a short time. Meanwhile, etching rate in the second removal step is comparatively low, so that excessive removal of the epitaxial layer (71) can be prevented.

Abstract: In this method for manufacturing a semiconductor element, a modified layer produced by subjecting a substrate (70) to mechanical polishing is removed by heating the substrate (70) under Si vapor pressure. An epitaxial layer formation step, an ion implantation step, an ion activation step, and a second removal step are then performed. In the second removal step, macro-step bunching and insufficient ion-implanted portions of the surface of the substrate (70) performed the ion activation step are removed by heating the substrate (70) under Si vapor pressure. After that, an electrode formation step in which electrodes are formed on the substrate (70) is performed.

Abstract: This method for treating a surface of a SiC substrate includes a first removal step in which a modified layer produced by subjecting the substrate (70) to mechanical polishing or chemical-mechanical polishing is removed by heating the substrate (70) under Si vapor pressure. A second removal step in which macro-step bunching occurred in an epitaxial layer (71) is removed by heating the substrate (70) under Si vapor pressure may also be performed. Since the etching rate can be varied, etching rate in the first removal step is high, so that the modified layer can be removed in a short time. Meanwhile, etching rate in the second removal step is comparatively low, so that excessive removal of the epitaxial layer (71) can be prevented.

Abstract: In this method for manufacturing a semiconductor element, a modified layer produced by subjecting a substrate (70) to mechanical polishing is removed by heating the substrate (70) under Si vapor pressure. An epitaxial layer formation step, an ion implantation step, an ion activation step, and a second removal step are then performed. In the second removal step, macro-step bunching and insufficient ion-implanted portions of the surface of the substrate (70) performed the ion activation step are removed by heating the substrate (70) under Si vapor pressure. After that, an electrode formation step in which electrodes are formed on the substrate (70) is performed.