Abstract: A transmission lubricating assembly of a helicopter includes: a transmission including a speed change structure that changes the speed of rotation produced by rotational power input from a prime mover and outputs the resulting rotational power and a housing accommodating the speed change structure; and a lubricator that lubricates the speed change structure. The lubricator includes a collector that collects a mist of a lubricating oil in an internal space of the housing and a dropper that is disposed below the collector and that applies droplets of the lubricating oil to the speed change structure, the droplets resulting from the collected mist being gathered under its own weight.

Abstract: A blade ring assembly including: a turbine blade ring extending in a circumferential direction about an axis; a component to be cooled, disposed on an inner circumferential side of the turbine blade ring; and an outer circumferential side component disposed on an outer circumferential side of the turbine blade ring. The turbine blade ring has a cooling medium intake port leading from an outer circumferential surface to an inner circumferential surface of the turbine blade ring. The outer circumferential side component includes: a first wall portion which covers at least a portion of the cooling medium intake port from the outer circumferential side of the turbine blade ring; and a second wall portion which extends from an end portion of the first wall portion on the axially downstream thereof toward the outer circumferential side of the turbine blade ring.

Abstract: A superconducting magnet device includes a tubular cryostat defining a central cavity therein, a first superconducting coil set and a second superconducting coil set disposed outside the central cavity and inside the tubular cryostat, and a power supply system being capable of controlling a magnitude of a first exciting current to the first superconducting coil set and a magnitude of a second exciting current to the second superconducting coil set independently of each other. The first superconducting coil set generates a magnetic field distribution, which is convex downward on an X axis and convex upward on a Y axis when the first exciting current is supplied, in the central cavity. The second superconducting coil set generates a magnetic field distribution, which is convex upward on the X axis and convex downward on the Y axis when the second exciting current is supplied, in the central cavity.

Abstract: A control apparatus includes a controller. The controller is configured to, upon acquiring travel request information indicating a travel request of a user from a terminal apparatus of the user, select at least one candidate service from among a plurality of mobility services based on at least one piece of information from among physical condition information on the user, schedule information on the user, weather information for a scheduled travel date and time, and day of week information for the scheduled travel date, acquire a result of a route search using the at least one candidate service, and transmit the result to the terminal apparatus.

Abstract: An optical connector cleaning tool includes a cleaning portion pressed against a coupling end face of an optical connector, a container storing a cleaning liquid, and an atomizer spraying the cleaning liquid to the cleaning portion.

Abstract: An information processing method includes receiving first information indicating a travel plan of a user, acquiring, for each on-demand vehicle service, second information indicating boarding/alighting points and operation status of a vehicle, determining and presenting, based on the first and second information, a recommended route for transferring bet ween first and second vehicles belonging to first and second on-demand vehicle services, and making a reservation with the first and second on-demand vehicle services in accordance with the recommended route.

Abstract: A recipe search support apparatus 10 is provided with: a storage unit 11 to hold recipe information; an information storage unit 100 configured to, when a recipe site receives a use report of a recipe from a user, receive an input of feature information of the recipe and store the feature information in association with the recipe and the use report in the storage unit 11; and an information output unit 101 configured to, when the recipe site receives a recipe search request, search the storage unit 11 for feature information matching a search keyword included in the request and output at least one of a recipe and a use report associated with the feature information.

Abstract: A semiconductor device may include: a semiconductor substrate; a surface electrode covering a surface of the semiconductor substrate; an insulating protection film covering a part of a surface of the surface electrode; and a solder-bonding metal film, the solder-bonding metal film covering a range spreading from a surface of the insulating protection film to the surface of the surface electrode, wherein the surface electrode may include: a first metal film provided on the semiconductor substrate; a second metal film being in contact with a surface of the first metal film, and having tensile strength higher than tensile strength of the first metal film; and a third metal film being in contact with a surface of the second metal film, and having tensile strength which is lower than the tensile strength of the second metal film and is higher than the tensile strength of the first metal film.

Abstract: A semiconductor device is provided with: a semiconductor substrate; a first electrode disposed on a surface of the semiconductor device and configured to be soldered to a conductive member; and a second electrode disposed on the surface of the semiconductor device and configured to be wire-bonded to a conductive member. The first electrode includes first, second and third metal layers. The second metal layer is located between the first and third metal layers. A metallic material of the second metal layer is greater in tensile strength than a metallic material of each one of the first metal layer and the third metal layer. The second electrode includes a layer made of a same metallic material as one of the first metal layer and the third metal layer, and does not include any layers made of a same metallic material as the second metal layer.

Abstract: A semiconductor device is provided with: a semiconductor substrate; a first electrode disposed on a surface of the semiconductor device and configured to be soldered to a conductive member; and a second electrode disposed on the surface of the semiconductor device and configured to be wire-bonded to a conductive member. The first electrode includes first, second and third metal layers. The second metal layer is located between the first and third metal layers. A metallic material of the second metal layer is greater in tensile strength than a metallic material of each one of the first metal layer and the third metal layer. The second electrode includes a layer made of a same metallic material as one of the first metal layer and the third metal layer, and does not include any layers made of a same metallic material as the second metal layer.

Abstract: A semiconductor device may include: a semiconductor substrate; a surface electrode covering a surface of the semiconductor substrate; an insulating protection film covering a part of a surface of the surface electrode; and a solder-bonding metal film, the solder-bonding metal film covering a range spreading from a surface of the insulating protection film to the surface of the surface electrode, wherein the surface electrode may include: a first metal film provided on the semiconductor substrate; a second metal film being in contact with a surface of the first metal film, and having tensile strength higher than tensile strength of the first metal film; and a third metal film being in contact with a surface of the second metal film, and having tensile strength which is lower than the tensile strength of the second metal film and is higher than the tensile strength of the first metal film.

Abstract: A switching device including a semiconductor substrate including a trench (gate electrode) extending in a mesh shape is provided, and the upper surface of the semiconductor substrate is covered by the interlayer insulating film. Within an element range a contact hole is provided in an interlayer insulating film above each cell region while within a surrounding range an entire upper surface of each cell region is covered by the interlayer insulating film. The first metal layer covers the interlayer insulating film, and has recesses above the contact holes. The insulating protective film covers an outer peripheral side portion of the first metal layer within the surrounding range. The second metal layer covers the first metal layer within an opening of the insulating protective film. Within the surrounding range, a second conductivity-type region extending to below lower ends of the trench and is electrically connected to the body region, is provided.

Abstract: A switching device including a semiconductor substrate including a trench (gate electrode) extending in a mesh shape is provided, and the upper surface of the semiconductor substrate is covered by the interlayer insulating film. Within an element range a contact hole is provided in an interlayer insulating film above each cell region while within a surrounding range an entire upper surface of each cell region is covered by the interlayer insulating film. The first metal layer covers the interlayer insulating film, and has recesses above the contact holes. The insulating protective film covers an outer peripheral side portion of the first metal layer within the surrounding range. The second metal layer covers the first metal layer within an opening of the insulating protective film. Within the surrounding range, a second conductivity-type region extending to below lower ends of the trench and is electrically connected to the body region, is provided.