Abstract: An acoustic device for a gas turbine combustor includes: a first region positioned at a downstream side of a combustion cylinder, the first region existing at a position which is at least one of a pair of positions across the combustion cylinder in a radial direction of the combustion cylinder; a pair of second regions whose axial-direction position with respect to the combustion cylinder overlaps at least partially with the pair of positions, and whose circumferential-direction position with respect to the combustion cylinder is different from that of the pair of positions, the pair of second regions existing at positions across the combustion cylinder in the radial direction; and a third region positioned at an upstream side of the first region and the second region with respect to the combustion cylinder.

Abstract: Provided are an information selection system, an information selection method, and an information selection program for efficiently and appropriately selecting information for use in information processing. A control unit of an assistance server generates a plurality of analysis models, using one or more pieces of information among information constituted by a plurality of pieces of training data, and calculates the accuracy of each of the analysis models. The control unit assigns distribution values according to each accuracy to information used for generating the analytical models, calculates statistics of the distribution values, for each piece of information used for generating the analytical models, and selects, using the statistics, information for use in generating the analytical models.

Abstract: A control unit of a support server identifies, with respect to input data, a nearby node among existing nodes. The control unit calculates the distance between the input data and the nearby node. If the distance is greater than a maximum distance, the control unit uses the input data to add a new node to the existing nodes, and updates the activity value and the age of the new node and the nearby node in accordance with the distance to the nearby node. The control unit generates a self-organizing map by using the activity value of each node and the activity value of each path to calculate an age-based degree of activity, and by determining the presence or absence of each node and each path according to the degree of activity.

Abstract: A superconducting magnet device includes a tubular cryostat defining a central cavity therein, a first superconducting coil set and a second superconducting coil set disposed outside the central cavity and inside the tubular cryostat, and a power supply system being capable of controlling a magnitude of a first exciting current to the first superconducting coil set and a magnitude of a second exciting current to the second superconducting coil set independently of each other. The first superconducting coil set generates a magnetic field distribution, which is convex downward on an X axis and convex upward on a Y axis when the first exciting current is supplied, in the central cavity. The second superconducting coil set generates a magnetic field distribution, which is convex upward on the X axis and convex downward on the Y axis when the second exciting current is supplied, in the central cavity.

Abstract: An optical connector cleaning tool includes a cleaning portion pressed against a coupling end face of an optical connector, a container storing a cleaning liquid, and an atomizer spraying the cleaning liquid to the cleaning portion.

Abstract: A recipe search support apparatus 10 is provided with: a storage unit 11 to hold recipe information; an information storage unit 100 configured to, when a recipe site receives a use report of a recipe from a user, receive an input of feature information of the recipe and store the feature information in association with the recipe and the use report in the storage unit 11; and an information output unit 101 configured to, when the recipe site receives a recipe search request, search the storage unit 11 for feature information matching a search keyword included in the request and output at least one of a recipe and a use report associated with the feature information.

Abstract: A semiconductor device may include: a semiconductor substrate; a surface electrode covering a surface of the semiconductor substrate; an insulating protection film covering a part of a surface of the surface electrode; and a solder-bonding metal film, the solder-bonding metal film covering a range spreading from a surface of the insulating protection film to the surface of the surface electrode, wherein the surface electrode may include: a first metal film provided on the semiconductor substrate; a second metal film being in contact with a surface of the first metal film, and having tensile strength higher than tensile strength of the first metal film; and a third metal film being in contact with a surface of the second metal film, and having tensile strength which is lower than the tensile strength of the second metal film and is higher than the tensile strength of the first metal film.

Abstract: A semiconductor device is provided with: a semiconductor substrate; a first electrode disposed on a surface of the semiconductor device and configured to be soldered to a conductive member; and a second electrode disposed on the surface of the semiconductor device and configured to be wire-bonded to a conductive member. The first electrode includes first, second and third metal layers. The second metal layer is located between the first and third metal layers. A metallic material of the second metal layer is greater in tensile strength than a metallic material of each one of the first metal layer and the third metal layer. The second electrode includes a layer made of a same metallic material as one of the first metal layer and the third metal layer, and does not include any layers made of a same metallic material as the second metal layer.

Abstract: A semiconductor device is provided with: a semiconductor substrate; a first electrode disposed on a surface of the semiconductor device and configured to be soldered to a conductive member; and a second electrode disposed on the surface of the semiconductor device and configured to be wire-bonded to a conductive member. The first electrode includes first, second and third metal layers. The second metal layer is located between the first and third metal layers. A metallic material of the second metal layer is greater in tensile strength than a metallic material of each one of the first metal layer and the third metal layer. The second electrode includes a layer made of a same metallic material as one of the first metal layer and the third metal layer, and does not include any layers made of a same metallic material as the second metal layer.

Abstract: A semiconductor device may include: a semiconductor substrate; a surface electrode covering a surface of the semiconductor substrate; an insulating protection film covering a part of a surface of the surface electrode; and a solder-bonding metal film, the solder-bonding metal film covering a range spreading from a surface of the insulating protection film to the surface of the surface electrode, wherein the surface electrode may include: a first metal film provided on the semiconductor substrate; a second metal film being in contact with a surface of the first metal film, and having tensile strength higher than tensile strength of the first metal film; and a third metal film being in contact with a surface of the second metal film, and having tensile strength which is lower than the tensile strength of the second metal film and is higher than the tensile strength of the first metal film.

Abstract: A switching device including a semiconductor substrate including a trench (gate electrode) extending in a mesh shape is provided, and the upper surface of the semiconductor substrate is covered by the interlayer insulating film. Within an element range a contact hole is provided in an interlayer insulating film above each cell region while within a surrounding range an entire upper surface of each cell region is covered by the interlayer insulating film. The first metal layer covers the interlayer insulating film, and has recesses above the contact holes. The insulating protective film covers an outer peripheral side portion of the first metal layer within the surrounding range. The second metal layer covers the first metal layer within an opening of the insulating protective film. Within the surrounding range, a second conductivity-type region extending to below lower ends of the trench and is electrically connected to the body region, is provided.

Abstract: A switching device including a semiconductor substrate including a trench (gate electrode) extending in a mesh shape is provided, and the upper surface of the semiconductor substrate is covered by the interlayer insulating film. Within an element range a contact hole is provided in an interlayer insulating film above each cell region while within a surrounding range an entire upper surface of each cell region is covered by the interlayer insulating film. The first metal layer covers the interlayer insulating film, and has recesses above the contact holes. The insulating protective film covers an outer peripheral side portion of the first metal layer within the surrounding range. The second metal layer covers the first metal layer within an opening of the insulating protective film. Within the surrounding range, a second conductivity-type region extending to below lower ends of the trench and is electrically connected to the body region, is provided.