Abstract: A manufacturing method of a semiconductor apparatus according to an embodiment includes forming an electrode on a first main surface of a semiconductor substrate made from a compound semiconductor; forming, at a location where the electrode is formed, a via hole that penetrates the first main surface and a second main surface of the semiconductor substrate, wherein a ratio of a thickness of the semiconductor substrate to a maximum value of a width of an opening in the second main surface is greater than 1; forming a rear-side electrode on a second main surface of the semiconductor substrate in such a manner that the rear-side electrode is electrically coupled to the electrode in the via hole; forming an insulating layer arranged at least a layer above the opening; and forming a solder layer in a layer above the rear-side electrode and the insulating layer.

Abstract: The present disclosure provides a medium processing apparatus, including: a housing provided with a surface facing a customer operating the medium processing apparatus; and a rolled coin device housed in the housing and configured to process rolled coins formed by bundling a plurality of loose coins. The surface of the housing includes a designated area located in a height range conforming to Americans with Disabilities Act (ADA) standard with respect to a height direction of the medium processing apparatus, and a rolled coin dispensing port of the rolled coin device for dispensing the rolled coins is arranged in the designated area.

Abstract: A solid-state imaging device package comprises a solid-state imaging device including a functional portion that performs imaging at the center portion of a surface, a frame provided to surround the functional portion at the outer peripheral portion of the solid-state imaging device, and a transparent substrate that is opposite to the functional portion and fixed to the frame to cover the solid-state imaging device. A manufacturing method includes the steps of forming the frame by laminating a resin in multiple layers by a 3D printer on either one of the solid-state imaging device or the transparent substrate, and bonding one other of the solid-state imaging device or the transparent substrate to the frame. The step of forming the frame further includes laminating the resin so that a surface roughness Ra of an inner peripheral surface of the frame is 50 nm or more and 30 ?m or less.

Abstract: According to one embodiment, a high-frequency amplifier includes an active element and an output matching circuit. The active element is provided on a substrate. The active element is configured to amplify a signal having a frequency band. The active element includes a cell region. The output matching circuit is connected to the active element. The output matching circuit includes a wire, a transmission line and an output terminal. The wire includes an input end and an output end. The input end of the wire is connected to an output part of the cell region of the active element. The transmission line is provided on the substrate. The transmission line includes an input part and an output part. The input part of the transmission line is connected to the output end of the wire. The output terminal is provided on the substrate.

Abstract: Certain embodiments provide a semiconductor device of an example including a semiconductor substrate, a semiconductor layer provided on the semiconductor substrate, a drain electrode and source electrode provided on the semiconductor layer, a gate electrode provided between the drain electrode and the source electrode on the semiconductor layer, and a heat transfer unit provided so as to fill a groove which penetrates the semiconductor layer right below the drain electrode till reaches the semiconductor substrate. The heat transfer unit includes a material different from that of the drain electrode and having thermal conductivity higher than that of the semiconductor substrate and the semiconductor layer under an operating temperature of the semiconductor device.

Abstract: According to one embodiment, a high-frequency amplifier includes an active element and an output matching circuit. The active element is provided on a substrate. The active element is configured to amplify a signal having a frequency band. The active element includes a cell region. The output matching circuit is connected to the active element. The output matching circuit includes a wire, a transmission line and an output terminal. The wire includes an input end and an output end. The input end of the wire is connected to an output part of the cell region of the active element. The transmission line is provided on the substrate. The transmission line includes an input part and an output part. The input part of the transmission line is connected to the output end of the wire. The output terminal is provided on the substrate.

Abstract: A semiconductor power amplifier comprises an input-side amplifier for inputting and amplifying an input signal, a balanced amplifier which is connected to an output terminal of the input-side amplifier, comprises two hybrid couplers and a plurality of power amplifiers, passes the input signal, and converts a reflective wave into thermal energy, and an output-side amplifier which is connected to an output terminal of the balanced amplifier and amplifies an output signal.

Abstract: A semiconductor power amplifier comprises an input-side amplifier for inputting and amplifying an input signal, a balanced amplifier which is connected to an output terminal of the input-side amplifier, comprises two hybrid couplers and a plurality of power amplifiers, passes the input signal, and converts a reflective wave into thermal energy, and an output-side amplifier which is connected to an output terminal of the balanced amplifier and amplifies an output signal.

Abstract: An amplifier comprises a power amplifier for amplifying an unmodulated high-frequency input signal, a first branching device which is provided at an input terminal side of the power amplifier and extracts a signal, a second branching device which is provided at an output terminal side of the power amplifier and extracts a signal, a mixer for mixing a signal from the first branching device and a signal from the second branching device, a low-pass filter for removing a frequency band component of the input signal from an output signal of the mixer, a high-pass filter for removing a DC component from an output signal of the low-pass filter, and a wave detector for extracting a signal.

Abstract: A microwave harmonic processing circuit includes (n?1) parallel open ended stubs differing in length, connected in parallel to an output terminal of a serial transmission line at a single point, and having predetermined electrical lengths corresponding to second to higher n-th (n is any integer) harmonics, respectively, the serial transmission line having an input terminal connected to an output terminal of a transistor and having a predetermined electrical length; a first strip conductor connecting the serial transmission line to two parallel open ended stubs of the (n?1) parallel open ended stubs at a single connecting point; a second strip conductor connecting the (n?3) parallel open ended stubs to each other at a single connecting point; a ground layer disposed between first strip conductor and second strip conductor; and a via electrically connecting a connecting portion of first strip conductor and a connecting portion of second strip conductor.

Abstract: A microwave harmonic processing circuit includes (n?1) parallel open ended stubs differing in length, connected in parallel to an output terminal of a serial transmission line at a single point, and having predetermined electrical lengths corresponding to second to higher n-th (n is any integer) harmonics, respectively, the serial transmission line having an input terminal connected to an output terminal of a transistor and having a predetermined electrical length; a first strip conductor connecting the serial transmission line to two parallel open ended stubs of the (n?1) parallel open ended stubs at a single connecting point; a second strip conductor connecting the (n?3) parallel open ended stubs to each other at a single connecting point; a ground layer disposed between first strip conductor and second strip conductor; and a via electrically connecting a connecting portion of first strip conductor and a connecting portion of second strip conductor.