Abstract: The disclosure aims to provide a polytetrafluoroethylene fine powder containing less water and less impurities. Provided is a polytetrafluoroethylene fine powder substantially free from water and a fluorine-containing compound having a molecular weight of 1000 or less.

Abstract: The disclosure aims to provide a polytetrafluoroethylene powder for an electrode binder which is a sustainable product and can reduce or prevent gas generation inside a battery cell and deterioration of battery characteristics, an electrode binder, an electrode mixture, an electrode, and a secondary battery. Provided is a polytetrafluoroethylene powder for use as an electrode binder, the polytetrafluoroethylene powder being substantially free from water and a fluorine-containing compound having a molecular weight of 1000 or less.

Abstract: A shaped body of a fluororesin obtained using a shaping material comprising a powder of a fluororesin. The powder of the fluororesin has a static bulk density of 0.3 g/ml or more and 1.5 g/ml or less, and a particle diameter of 10 ?m or more and 300 ?m or less in terms of D50. Also disclosed is a three-dimensional structure containing the shaped body, and a method of shaping the shaping material.

Abstract: A molded body which is formed from a shaping material containing a fluororesin powder. The fluororesin powder has a D50 of 30 ?m or more and 200 ?m or less and a D10 of 12 ?m or more. Also disclosed is a method for forming a molded body from a shaping material containing the fluororesin powder, the method including controlling the temperature of the fluororesin powder; and irradiating the fluororesin powder with a laser at the controlled temperature to fuse the same.

Abstract: A shaping material for a powder bed fusion method, containing a powder of a fluororesin.

Abstract: A molded body which is formed from a shaping material containing a fluororesin powder. The fluororesin powder has a D50 of 30 µm or more and 200 µm or less and a D10 of 12 µm or more. Also disclosed is a method for forming a molded body from a shaping material containing the fluororesin powder, the method including controlling the temperature of the fluororesin powder; and irradiating the fluororesin powder with a laser at the controlled temperature to fuse the same.

Abstract: A three-dimensional shaped object including a fluororesin, wherein the three-dimensional shaped object is a laminate of a layer according to the slice data of the three-dimensional structure. The three-dimensional shaped object has a tensile stress at break of 9 MPa or more, and a tensile elongation at break in the direction perpendicular to the shaped plane of 20% or more. Also disclosed is a method for producing the three-dimensional shaped object.

Abstract: A shaping material for a powder bed fusion method, including a powder of a fluororesin, wherein the fluororesin has a D50 of 30 ?m or more and 200 ?m or less, and the fluororesin has a D10 of 12 ?m or more.

Abstract: It is an object of the present invention to provide a silicon carbide substrate having a low defect density that does not contaminate a process device and a silicon carbide semiconductor device including the silicon carbide substrate. A silicon carbide substrate according to the present invention is a silicon carbide substrate including: a substrate inner portion; and a substrate outer portion surrounding the substrate inner portion, wherein non-dopant metal impurity concentration of the substrate inner portion is 1×1016 cm?3 or more, and a region of the substrate outer portion at least on a surface side thereof is a substrate surface region in which the non-dopant metal impurity concentration is less than 1×1016 cm?3.

Abstract: A shaping material for a powder bed fusion method, containing a powder of a fluororesin.

Abstract: A shaping material for a powder bed fusion method, including a powder of a fluororesin, wherein the fluororesin has a D50 of 30 ?m or more and 200 ?m or less, and the fluororesin has a D10 of 12 ?m or more.

Abstract: It is an object of the present invention to provide a silicon carbide substrate having a low defect density that does not contaminate a process device and a silicon carbide semiconductor device including the silicon carbide substrate. A silicon carbide substrate according to the present invention is a silicon carbide substrate including: a substrate inner portion; and a substrate outer portion surrounding the substrate inner portion, wherein non-dopant metal impurity concentration of the substrate inner portion is 1×1016 cm?3 or more, and a region of the substrate outer portion at least on a surface side thereof is a substrate surface region in which the non-dopant metal impurity concentration is less than 1×1016 cm?3.