Abstract: The present invention is a hydraulic pressure control device for an automatic transmission that performs a gear shift by switching between engagement and disengagement of a plurality of friction engagement elements and includes solenoid valves, provided corresponding to the friction engagement elements, respectively, that switches between engagement and disengagement of the friction engagement elements by switching between supply and non-supply of hydraulic pressures to the friction engagement elements, and a control device that switches between supply and non-supply of the hydraulic pressures to the friction engagement elements by supplying a predetermined control current to the solenoid valves, in which the control device supplies a fixation preventing current lower than the control current to at least one of the solenoid valves corresponding to the friction engagement elements in a disengagement state of the plurality of friction engagement elements.

Abstract: The present invention is a hydraulic pressure control device for an automatic transmission that performs a gear shift by switching between engagement and disengagement of a plurality of friction engagement elements and includes solenoid valves, provided corresponding to the friction engagement elements, respectively, that switches between engagement and disengagement of the friction engagement elements by switching between supply and non-supply of hydraulic pressures to the friction engagement elements, and a control device that switches between supply and non-supply of the hydraulic pressures to the friction engagement elements by supplying a predetermined control current to the solenoid valves, in which the control device supplies a fixation preventing current lower than the control current to at least one of the solenoid valves corresponding to the friction engagement elements in a disengagement state of the plurality of friction engagement elements.

Abstract: An electronic device has a power semiconductor device, a first semiconductor integrated circuit device, and a second semiconductor integrated circuit device. The power semiconductor device has a terminal outputting sense current. The first semiconductor integrated circuit device has an overcurrent detection circuit detecting overcurrent on the basis of the sense current, and a temperature detection circuit detecting temperature of the power semiconductor device. The second semiconductor integrated circuit device has a storage device storing a temperature characteristic of a current mirror ratio of the power semiconductor device, a temperature detecting unit calculating temperature on the basis of an output of the temperature detection circuit, and an overcurrent detection control unit controlling the overcurrent detection circuit on the basis of the temperature detected by the temperature detecting unit and the temperature characteristic of the current mirror ratio stored in the storage device.

Abstract: A semiconductor device, includes a semiconductor chip which includes: first and second terminals; a first conductive film pattern for the first terminal, formed over an interlayer insulation film; an insulation film formed over the interlayer insulation film so as to cover the first conductive film pattern; a first opening for the first terminal formed in the insulation film, and for exposing a part of the first conductive film pattern; and a nickel film formed over the first conductive film pattern at a portion thereof exposed from the first opening, wherein a semiconductor element controls a conduction between the first terminal and the second terminal, wherein the first terminal is formed of the first conductive film pattern and the nickel film, wherein the first conductive film pattern is formed of a lamination film having a first conductor film containing aluminum, and a second conductor film.

Abstract: An electronic device has a power semiconductor device, a first semiconductor integrated circuit device, and a second semiconductor integrated circuit device. The power semiconductor device has a terminal outputting sense current. The first semiconductor integrated circuit device has an overcurrent detection circuit detecting overcurrent on the basis of the sense current, and a temperature detection circuit detecting temperature of the power semiconductor device. The second semiconductor integrated circuit device has a storage device storing a temperature characteristic of a current mirror ratio of the power semiconductor device, a temperature detecting unit calculating temperature on the basis of an output of the temperature detection circuit, and an overcurrent detection control unit controlling the overcurrent detection circuit on the basis of the temperature detected by the temperature detecting unit and the temperature characteristic of the current mirror ratio stored in the storage device.

Abstract: A semiconductor device, includes a semiconductor chip which includes: first and second terminals; a first conductive film pattern for the first terminal, formed over an interlayer insulation film; an insulation film formed over the interlayer insulation film so as to cover the first conductive film pattern; a first opening for the first terminal formed in the insulation film, and for exposing a part of the first conductive film pattern; and a nickel film formed over the first conductive film pattern at a portion thereof exposed from the first opening, wherein a semiconductor element controls a conduction between the first terminal and the second terminal, wherein the first terminal is formed of the first conductive film pattern and the nickel film, wherein the first conductive film pattern is formed of a lamination film having a first conductor film containing aluminum, and a second conductor film.

Abstract: The reliability of a semiconductor device is improved. The semiconductor device includes a wire which is a conductive film pattern for a terminal formed over a first insulation film over a semiconductor substrate, a second insulation film formed over the first insulation film in such a manner as to cover the wire, and a nickel layer formed over the wire at a portion thereof exposed from an opening in the second insulation film. The wire is formed of a lamination film having a main conductor film containing aluminum as a main component, and a conductor film formed over the entire top surface of the main conductor film. The conductor film is formed of a titanium film, a tungsten film, or a titanium tungsten film. The nickel layer is formed over the conductor film at a portion thereof exposed from the opening.

Abstract: The reliability of a semiconductor device is improved. The semiconductor device includes a wire which is a conductive film pattern for a terminal formed over a first insulation film over a semiconductor substrate, a second insulation film formed over the first insulation film in such a manner as to cover the wire, and a nickel layer formed over the wire at a portion thereof exposed from an opening in the second insulation film. The wire is formed of a lamination film having a main conductor film containing aluminum as a main component, and a conductor film formed over the entire top surface of the main conductor film. The conductor film is formed of a titanium film, a tungsten film, or a titanium tungsten film. The nickel layer is formed over the conductor film at a portion thereof exposed from the opening.