Abstract: A semiconductor device includes a substrate; a semiconductor layer provided on the substrate; a source electrode and a drain electrode provided on the semiconductor layer; a first film including a first insulating film that is provided on the semiconductor layer and is located between the source electrode and the drain electrode; a gate electrode provided between the source electrode and the drain electrode; and a silicon carbide layer covering the gate electrode. The first film has an opening. The gate electrode includes a first portion that is located within the opening in a plan view, and a second portion that is connected to the first portion, is disposed on the first film, and is located closer to the drain electrode than the first portion is.

Abstract: A semiconductor device and a process of forming the semiconductor device are disclosed. The semiconductor device type of a high electron mobility transistor (HEMT) has double SiN films on a semiconductor layer, where the first SiN film is formed by the lower pressure chemical vapor deposition (LPCVD) technique, while, the second SiN film is deposited by the plasma assisted CVD (p-CVD) technique. Moreover, the gate electrode has an arrangement of double metals, one of which contains nickel (Ni) as a Schottky metal, while the other is free from Ni and covers the former metal. A feature of the invention is that the first metal is in contact with the semiconductor layer but apart from the second SiN film.

Abstract: To obtain an image desired by a user by performing an intuitive operation. An image display system includes a first display control unit that displays a reference image on a display surface, and a second display control unit that selectably displays a plurality of candidate images each having image information different from the reference image in the periphery of a display area of the reference image on the display surface, wherein each image data of the plurality of candidate images is included in a search area on a predetermined space determined based on the image data of the reference image.

Abstract: A semiconductor device includes a substrate, a semiconductor layer that is provided on the substrate and includes channel layers that are stacked, a source electrode and a drain electrode that are electrically connected to the channel layers, and gate electrodes that are provided between the source electrode and the drain electrode, are arranged in a direction intersecting with a direction from the source electrode to the drain electrode, and are embedded in the semiconductor layer so as to extend from a top face of the semiconductor layer to at least a channel layer closest to the substrate, wherein a width between two adjacent gate electrodes of the gate electrodes in a channel layer farther from the substrate of two channel layers of the channel layers, is narrower than a width between the two adjacent gate electrodes in a channel layer closer to the substrate of the two channel layers.

Abstract: [Problem] To obtain an image desired by a user by performing an intuitive operation. [Solution] An image display system includes a first display control unit that displays a reference image on a display surface, and a second display control unit that selectably displays a plurality of candidate images each having image information different from the reference image in the periphery of a display area of the reference image on the display surface, wherein each image data of the plurality of candidate images is included in a search area on a predetermined space determined based on the image data of the reference image.

Abstract: A method of manufacturing a semiconductor device including a substrate; a first nitride layer containing gallium on the substrate; and a second nitride layer containing silicon on the first nitride layer includes generating an etchant of a gas containing chlorine atoms or bromine atoms; and selectively removing the second nitride layer, wherein the etchant is generated by plasma discharge of the gas, wherein the second nitride layer and the first nitride layer are prevented from being irradiated with ultraviolet rays generated at a time of the plasma discharge, and wherein the selectively removing the second nitride layer includes etching the second nitride layer under a first atmosphere at a first pressure that is lower than a first saturated vapor pressure of a silicon compound and that is higher than a second saturated vapor pressure of a gallium compound.

Abstract: A semiconductor device and a process of forming the semiconductor device are disclosed. The semiconductor device type of a high electron mobility transistor (HEMT) has double SiN films on a semiconductor layer, where the first SiN film is formed by the lower pressure chemical vapor deposition (LPCVD) technique, while, the second SiN film is deposited by the plasma assisted CVD (p-CVD) technique. Moreover, the gate electrode has an arrangement of double metals, one of which contains nickel (Ni) as a Schottky metal, while the other is free from Ni and covers the former metal. A feature of the invention is that the first metal is in contact with the semiconductor layer but apart from the second SiN film.

Abstract: The purpose of the present invention is to provide: a resin material that has a novel structure and can be suitably used in a printed wiring board: and a resin composition that contains this resin material and has a cured product thereof having a low dielectric loss tangent and excellent adhesion, heat resistance, and mechanical characteristics. The present invention provides: a polyamic acid resin that is a reaction product of an amino phenol compound (a), an aliphatic diamino compound (b), a tetrabasic acid dianhydride (c), and an aromatic diamino compound (d), said polyamic acid resin having an amino group at both ends thereof: a polyimide resin being an imidization compound of the polyamic acid resin: a resin composition containing the polyimide resin: and a cured product thereof.

Abstract: A method of manufacturing a semiconductor device including a substrate; a first nitride layer containing gallium on the substrate; and a second nitride layer containing silicon on the first nitride layer includes generating an etchant of a gas containing chlorine atoms or bromine atoms; and selectively removing the second nitride layer, wherein the etchant is generated by plasma discharge of the gas, wherein the second nitride layer and the first nitride layer are prevented from being irradiated with ultraviolet rays generated at a time of the plasma discharge, and wherein the selectively removing the second nitride layer includes etching the second nitride layer under a first atmosphere at a first pressure that is lower than a first saturated vapor pressure of a silicon compound and that is higher than a second saturated vapor pressure of a gallium compound.

Abstract: A semiconductor device and a process of forming the semiconductor device are disclosed. The semiconductor device type of a high electron mobility transistor (HEMT) has double SiN films on a semiconductor layer, where the first SiN film is formed by the lower pressure chemical vapor deposition (LPCVD) technique, while, the second SiN film is deposited by the plasma assisted CVD (p-CVD) technique. Moreover, the gate electrode has an arrangement of double metals, one of which contains nickel (Ni) as a Schottky metal, while the other is free from Ni and covers the former metal. A feature of the invention is that the first metal is in contact with the semiconductor layer but apart from the second SiN film.

Abstract: An upper side joint section that extends inward in a vehicle width direction from a vicinity of a rear side frame and a lateral side joint section that extends downward from the upper side joint section and that is separated in the vehicle width direction from the rear side frame are provided on a rear floor panel of a vehicle body rear part structure. The rear panel has: a frame joint part to which the rear side frame is joined; a first floor joint part to which the upper side joint section of the rear floor panel is joined; and a second floor joint part to which the lateral side joint section of the rear floor panel is joined. A longitudinal bead is provided on a part of the rear panel between the frame joint part and the second floor joint part. The longitudinal bead extends to a lower end of the rear panel and is opened downward.

Abstract: A semiconductor device and a process of forming the semiconductor device are disclosed. The semiconductor device type of a high electron mobility transistor (HEMT) has double SiN films on a semiconductor layer, where the first SiN film is formed by the lower pressure chemical vapor deposition (LPCVD) technique, while, the second SiN film is deposited by the plasma assisted CVD (p-CVD) technique. Moreover, the gate electrode has an arrangement of double metals, one of which contains nickel (Ni) as a Schottky metal, while the other is free from Ni and covers the former metal. A feature of the invention is that the first metal is in contact with the semiconductor layer but apart from the second SiN film.

Abstract: A display control method includes generating first virtual space data defining a first virtual space including a first virtual camera and a display object. The method includes displaying a first visual-field image on a head-mounted display based on a visual field of the first virtual camera and the first virtual space data. The method includes updating the first visual-field image by moving the first virtual camera in synchronization with detected movement of the head-mounted display. The method includes generating second virtual space data for defining a second virtual space including a second virtual camera. The method includes displaying a second visual-field image on the display object based on a visual field of the second virtual camera and the second virtual space data. The method includes updating the second visual-field image by moving the second virtual camera in the second virtual space in synchronization with the detected movement.

Abstract: A semiconductor device made of primarily nitride semiconductor materials is disclosed. The semiconductor device includes a substrate; a semiconductor stack on the substrate; electrodes of a gate, a source, and a drain each provided on the semiconductor stack, where the gate electrode contains nickel (Ni); a Si compound covering surfaces of the semiconductor stack; an aluminum oxide (Al2O3) film covering the gate electrode exposed from the Si compound; and another Si compound covering the Al2O3 film and the Si compound exposed from the Al2O3 film. A feature of the semiconductor device of the invention is that the Al2O3 film exposes the Si compound at least between the gate electrode and the drain electrode.

Abstract: An upper side joint section that extends inward in a vehicle width direction from a vicinity of a rear side frame and a lateral side joint section that extends downward from the upper side joint section and that is separated in the vehicle width direction from the rear side frame are provided on a rear floor panel of a vehicle body rear part structure. The rear panel has: a frame joint part to which the rear side frame is joined; a first floor joint part to which the upper side joint section of the rear floor panel is joined; and a second floor joint part to which the lateral side joint section of the rear floor panel is joined. A longitudinal bead is provided on a part of the rear panel between the frame joint part and the second floor joint part. The longitudinal bead extends to a lower end of the rear panel and is opened downward.

Abstract: A method includes receiving a signal requesting content, wherein the content defines a virtual space displayable on a head mounted display (HMD). The method further includes determining sub-content to be displayed in the virtual space. The method further includes determining a display condition, wherein the display condition defines a timing for displaying the sub-content in the virtual space. The method further includes instructing a user terminal including the HMD to display the content and the sub-content based on the determined display condition.

Abstract: A display control method includes generating first virtual space data defining a first virtual space including a first virtual camera and a display object. The method includes displaying a first visual-field image on a head-mounted display based on a visual field of the first virtual camera and the first virtual space data. The method includes updating the first visual-field image by moving the first virtual camera in synchronization with detected movement of the head-mounted display. The method includes generating second virtual space data for defining a second virtual space including a second virtual camera. The method includes displaying a second visual-field image on the display object based on a visual field of the second virtual camera and the second virtual space data. The method includes updating the second visual-field image by moving the second virtual camera in the second virtual space in synchronization with the detected movement.