Abstract: Provided is a duplex stainless steel having a high strength and a high toughness. A stainless steel according to the present invention includes: a chemical composition containing, in mass percent, C: at most 0.030%, Si: 0.20 to 1.00%, Mn: at most 8.00%, P: at most 0.040%, S: at most 0.0100%, Cu: more than 2.00% and at most 4.00%, Ni: 4.00 to 8.00%, Cr: 20.0 to 30.0%, Mo: at least 0.50% and less than 2.00%, N: 0.100 to 0.350%, and sol. Al: at most 0.040%, the balance being Fe and impurities; and a structure, wherein a rate of ferrite in the structure is 30 to 70%, and a hardness of the ferrite in the structure is at least 300 Hv10gf.

Abstract: According to the embodiment, the semiconductor device includes: a substrate; a stacked body; and a plurality of columnar portions. The stacked body is provided on the substrate. The stacked body includes a plurality of electrode layers stacked with an insulator interposed. The stacked body includes a stacked portion and a staircase portion. The plurality of electrode layers includes a first portion and a second portion. The columnar portions are provided in the stacked portion of the stacked body. The columnar portions extend in a stacking direction of the stacked body. The columnar portions include a semiconductor body extending in the stacking direction and a charge storage film. The second portion includes a third portion. A thickness of the third portion along the stacking direction is thinner than a thickness of the first portion along the stacking direction.

Abstract: According to an embodiment, a semiconductor memory device comprises: a stacked body including control gate electrodes stacked upwardly of a substrate; a semiconductor layer facing the control gate electrodes; and a gate insulating layer provided between the control gate electrode and the semiconductor layer. The stacked body comprises: a first metal layer configuring the control gate electrode; a first barrier metal layer contacting an upper surface of this first metal layer; a first silicon nitride layer contacting an upper surface of this first barrier metal layer; a first inter-layer insulating layer contacting an upper surface of this first silicon nitride layer; a second barrier metal layer contacting a lower surface of the first metal layer; a second silicon nitride layer contacting a lower surface of this second barrier metal layer; and a second inter-layer insulating layer contacting a lower surface of this second silicon nitride layer.

Abstract: A bias circuit supplies a bias voltage VBIAS to a microphone. A variable gain amplifier amplifies a reference voltage VREF. A low-pass filter removes a high-frequency component from the output of the variable gain amplifier. A voltage follower amplifier receives the output voltage of the low-pass filter, and supplies the output voltage to the microphone.

Abstract: Providing a parameter calculation unit that calculates parameters representing medical functional information for pixel positions of the medical image, wherein the upper and lower limit values of the parameter medically represent the same functional information and whose value changes cyclically between these values, an interpolation parameter calculation unit that obtains, for a pixel position for which the parameter is not calculated, a parameter by interpolation, the unit calculating a parameter obtained by the interpolation using a cyclic function in which the interpolation direction differs according to the difference between the parameters calculated for two pixel positions, a display color group storage unit that includes a color group in which the same color corresponds to the upper and lower limit values of the parameter and whose color changes with the magnitude of the parameter, and a mapping unit that maps the parameters based on the color group.

Abstract: [Problem] To perform an assembling operation easily while attaining improvement in engine efficiency. [Solution] An outboard motor 10 according to the invention includes an upstream side duct 42 which is fixed to an engine upper cover 27, and a downstream side duct 43 which is fixed to an engine 14 side. The upstream side duct 42 includes an exhaust port 52 which is opened at its side face. The downstream side duct 43 includes a downstream side lower duct 59 and a downstream side upper duct 60. In the downstream side lower duct 59, a suction port 61 is provided at a position opposed to the exhaust port 52 and separately at a predetermined distance from the exhaust port 52. In the downstream side upper duct 60, an exhaust port formed toward a throttle body 36 of the engine 14 is provided above the downstream side lower duct 59. The upstream side duct 42 and the downstream side duct 43 are formed so as not to interfere with each other when the engine upper cover 27 is moved vertically.

Abstract: A semiconductor memory device includes a substrate, a plurality of first control gate electrodes, a plurality of second control gate electrodes, first to second select gate electrodes, first to second gate electrodes, a bit line, first to second semiconductor pillars, and a controller. The controller applies a first potential to the first select gate electrode, a third potential lower than the first potential to the second select gate electrode, a second potential to the first gate electrode and the second gate electrode, a selecting potential not less than the third potential to one of the plurality of the first control gate electrodes, and an unselecting potential higher than the selecting potential to other than the one of the plurality of first control gate electrodes in a reading operation.

Abstract: A semiconductor memory device includes a substrate, a plurality of first control gate electrodes, a plurality of second control gate electrodes, first to second select gate electrodes, first to second gate electrodes, a bit line, first to second semiconductor pillars, and a controller. The controller applies a first potential to the first select gate electrode, a third potential lower than the first potential to the second select gate electrode, a second potential to the first gate electrode and the second gate electrode, a selecting potential not less than the third potential to one of the plurality of the first control gate electrodes, and an unselecting potential higher than the selecting potential to other than the one of the plurality of first control gate electrodes in a reading operation.

Abstract: A welded joint of duplex stainless steel, which can suppress precipitation ? phase under high heat input welding, is excellent in SCC resistance under high-temperature chloride environments. A weld metal of the welded joint contains, in mass percent, C: at most 0.030%, Si: 0.20 to 1.00%, Mn: at most 8.00%, P: at most 0.040%, S: at most 0.0100%, Cu: at most 2.00%, Ni: 7.00 to 12.00%, Cr: 20.0 to 30.0%, Mo: 1 to 4%, N: 0.100 to 0.350%, sol. Al: at most 0.040%, and O: at most 0.035%, the balance being Fe and impurities. The weld metal satisfies Expressions (1) and (3): 2.2Cr+7Mo+3Cu>66??(1) Cr+11Mo+10Ni?12(Cu+30N)<100??(3) where a content (mass percent) of each element in one of the base metal and weld metal is used for each element in Expressions (1) and (3).

Abstract: A process for producing a welded joint, which includes a weld metal having high strength and high toughness, and containing fewer blowholes, includes the steps of: preparing a base material containing, by mass %, not less than 10.5% of Cr; and subjecting the base material to GMA welding using a shielding gas containing 1 to 2 volume % or 35 to 50 volume % of CO2 gas, and the balance being inert gas, thereby forming a weld metal includes, by mass %, C: not more than 0.080%, Si: 0.20 to 1.00%, Mn: not more than 8.00%, P: not more than 0.040%, S: not more than 0.0100%, Cu: not more than 2.0%, Cr: 20.0 to 30.0%, Ni: 7.00 to 12.00%, N: 0.100 to 0.350%, O: 0.02 to 0.11%, sol. Al: not more than 0.040%, at least one of Mo: 1.00 to 4.00% and W: 1.00 to 4.00%, and the balance being Fe and impurities.

Abstract: An input to set a correction contour line inside one region from an operator is received, and a contour line of the one region is corrected so that the correction contour line becomes a part of a contour line after correction. In this case, when a start point of the correction contour line is located on a unique contour line of each region and an end point thereof is located on a contour line shared by the two regions, the contour line of the other region is maintained, and when the start point is located on the shared contour line and the end point is located on the unique contour line, the contour line of the other region is also corrected so that the correction contour line becomes the shared contour line in the contour lines of the two regions after the correction.

Abstract: [Problem] To perform an assembling operation easily while attaining improvement in engine efficiency. [Solution] An outboard motor 10 according to the invention includes an upstream side duct 42 which is fixed to an engine upper cover 27, and a downstream side duct 43 which is fixed to an engine 14 side. The upstream side duct 42 includes an exhaust port 52 which is opened at its side face. The downstream side duct 43 includes a downstream side lower duct 59 and a downstream side upper duct 60. In the downstream side lower duct 59, a suction port 61 is provided at a position opposed to the exhaust port 52 and separately at a predetermined distance from the exhaust port 52. In the downstream side upper duct 60, an exhaust port formed toward a throttle body 36 of the engine 14 is provided above the downstream side lower duct 59. The upstream side duct 42 and the downstream side duct 43 are formed so as not to interfere with each other when the engine upper cover 27 is moved vertically.

Abstract: An input to set a correction contour line inside one region from an operator is received, and a contour line of the one region is corrected so that the correction contour line becomes a part of a contour line after correction. In this case, when a start point of the correction contour line is located on a unique contour line of each region and an end point thereof is located on a contour line shared by the two regions, the contour line of the other region is maintained, and when the start point is located on the shared contour line and the end point is located on the unique contour line, the contour line of the other region is also corrected so that the correction contour line becomes the shared contour line in the contour lines of the two regions after the correction.

Abstract: A first tomographic image of a three-dimensional image is displayed on a display screen, and a cursor to be operated by a user is also displayed in the displayed first tomographic image, and at least one second tomographic image intersecting the first tomographic image at a three-dimensional position in the three-dimensional image corresponding to a two-dimensional position pointed by the cursor in the first tomographic image is also displayed. A user input by a button operation giving an instruction to move the cursor is received. The cursor is moved to a two-dimensional position in one of the at least one second tomographic image corresponding to the three-dimensional position in the three-dimensional image corresponding to the two-dimensional position pointed by the cursor in the first tomographic image.

Abstract: A curved line correction apparatus includes a correction target receiving unit that receives selection of a correction target point when an instruction mark is placed on an arbitrary point on a curved line composed of a plurality of arranged points, a correction target range setting unit that sets a certain range of the curved line, including the correction target point, as a correction target range, and a correction unit that corrects a portion of the curved line within the correction target range by moving the correction target point and a point within the correction target range when movement of the instruction mark is received, in which the correction target range setting unit changes the size of the correction target range when an instruction input to change the range is received with the instruction mark being placed on the correction target point.

Abstract: A nonvolatile semiconductor memory device includes a plurality of memory strings including a plurality of memory transistors connected in series and a selection transistor disposed on either end of the plurality of memory transistors, which together form a memory cell. The memory transistors and the selection transistors each include a polysilicon layer formed on an insulating film as a channel region thereof. A drain region is in a first diffusion layer region in the polysilicon layer in a location adjacent to a selection transistor at a first end of the memory string, and a source region is in a second diffusion layer region in the polysilicon layer in a location adjacent to a selection transistor at a second end of the memory string. In at least one of the first and the second diffusion regions, the grain size of the polysilicon is smaller than in other portions of the polysilicon.

Abstract: A bias circuit supplies a bias voltage VBIAS to a microphone. A variable gain amplifier amplifies a reference voltage VREF. A low-pass filter removes a high-frequency component from the output of the variable gain amplifier. A voltage follower amplifier receives the output voltage of the low-pass filter, and supplies the output voltage to the microphone.

Abstract: Extracting a tubular structure from volume data, determining a target region which should be reached by an endoscope through the tubular structure, extracting, among plurality on a route of the tubular structure, a point that satisfies a given condition as a target point that should be reached by a distal end portion of the endoscope, and identifying and determining a route of the tubular structure from a predetermined start point in the tubular structure to the extracted target point as a route through which the endoscope should be passed.

Abstract: In a computer with a touch panel, displaying a plurality of images on the touch panel using a display parameter preset to each image, and changing, when a touch gesture associated with changing the display parameter is performed on the touch panel for any one of the plurality of displayed images, the display parameter according to the touch gesture for all of the images other than an image somewhere in the display area of which is being pressed when the touch gesture is performed.

Abstract: Providing a parameter calculation unit that calculates parameters representing medical functional information for pixel positions of the medical image, wherein the upper and lower limit values of the parameter medically represent the same functional information and whose value changes cyclically between these values, an interpolation parameter calculation unit that obtains, for a pixel position for which the parameter is not calculated, a parameter by interpolation, the unit calculating a parameter obtained by the interpolation using a cyclic function in which the interpolation direction differs according to the difference between the parameters calculated for two pixel positions, a display color group storage unit that includes a color group in which the same color corresponds to the upper and lower limit values of the parameter and whose color changes with the magnitude of the parameter, and a mapping unit that maps the parameters based on the color group.