Abstract: A wiring member includes a wiring body and a pattern. The wiring body includes a plurality of wire-like transmission members and a base material. The plurality of wire-like transmission members are fixed to the base material in an aligned state, and the pattern is provided on the wiring body. The pattern makes a two-dimensional position of at least a part of a portion related to the base material recognizable in the wiring body.

Abstract: A connection structure of a shield terminal (30) is electrically connected and fixed to an opening end part of a tubular braided wire (20) covering a covered wire (10) along the long direction. The shield terminal (30) has: a tubular caulked part (33) for which the part folded back outwardly at the opening end part of the braided wire (20) is fixed by caulking to the outer peripheral surface by a caulking sleeve (40); and a pressure energizing part (35) provided near the caulked part (33) and pressed and energized so that the braided wire (20) does not move in relation to the covered wire (10).

Abstract: A connection structure of a shield terminal (30) is electrically connected and fixed to an opening end part of a tubular braided wire (20) covering a covered wire (10) along the long direction. The shield terminal (30) has: a tubular caulked part (33) for which the part folded back outwardly at the opening end part of the braided wire (20) is fixed by caulking to the outer peripheral surface by a caulking sleeve (40); and a pressure energizing part (35) provided near the caulked part (33) and pressed and energized so that the braided wire (20) does not move in relation to the covered wire (10).

Abstract: A plasma processing method according to an aspect includes: preparing a plasma processing apparatus including: a chamber; a lower electrode; an upper electrode; a focus ring surrounding a peripheral edge of the lower electrode; and an annular coil disposed on an upper portion of the upper electrode at a more outer position than the peripheral edge of the lower electrode; placing a substrate on the lower electrode, with a peripheral edge of the substrate surrounded by the focus ring; introducing process gas into the chamber; generating plasma of the process gas by applying high-frequency power across the upper electrode and the lower electrode; and leveling an interface of a plasma sheath on an upper portion of the substrate with that on an upper portion of the focus ring by generating a magnetic field by supplying a current to the annular coil.

Abstract: A plug connector is provided in a plug housing and has a conductive braided wire that connects ends of a plurality of plug terminals opposite to contact points with receptacle terminals such that each plug terminal can move relatively to each other. A service plug has a plug connector and a receptacle connector.

Abstract: A plug connector is provided in a plug housing and has a conductive braided wire that connects ends of a plurality of plug terminals opposite to contact points with receptacle terminals such that each plug terminal can move relatively to each other. A service plug has a plug connector and a receptacle connector.

Abstract: A plasma processing method according to an aspect includes: preparing a plasma processing apparatus including: a chamber; a lower electrode; an upper electrode; a focus ring surrounding a peripheral edge of the lower electrode; and an annular coil disposed on an upper portion of the upper electrode at a more outer position than the peripheral edge of the lower electrode; placing a substrate on the lower electrode, with a peripheral edge of the substrate surrounded by the focus ring; introducing process gas into the chamber; generating plasma of the process gas by applying high-frequency power across the upper electrode and the lower electrode; and leveling an interface of a plasma sheath on an upper portion of the substrate with that on an upper portion of the focus ring by generating a magnetic field by supplying a current to the annular coil.

Abstract: A substrate cleaning apparatus includes a supporting unit, provided in a processing chamber having a gas exhaust port, for supporting a substrate; one or more nozzle units, each for ejecting gas clusters to a peripheral portion of the substrate supported by the supporting unit to remove unnecessary substances from the peripheral portion; and a moving mechanism for changing relative positions of the supporting unit and the nozzle unit during ejecting the gas clusters. Each nozzle unit discharges a cleaning gas having a pressure higher than that in the processing chamber so that the cleaning gas is adiabatically expanded to form aggregates of atoms and/or molecules.

Abstract: In a plasma etching method for etching a metal layer of a substrate to be processed through a hard mask by using a plasma etching apparatus, a first step in which a first etching gas comprising a mixed gas of O2, CF4 and HBr is used as an etching gas, and a second step in which a second etching gas comprising a mixed gas of O2 and CF4 is used as an etching gas, are continuously and alternately repeated a plurality of times. At this time, a first high-frequency power of a first frequency and a second high-frequency power of a second frequency, which is lower than the first frequency, are applied to a lower electrode, and the first high-frequency power is applied in a pulse form.

Abstract: In a plasma etching method for etching a metal layer of a substrate to be processed through a hard mask by using a plasma etching apparatus, a first step in which a first etching gas comprising a mixed gas of O2, CF4 and HBr is used as an etching gas, and a second step in which a second etching gas comprising a mixed gas of O2 and CF4 is used as an etching gas, are continuously and alternately repeated a plurality of times. At this time, a first high-frequency power of a first frequency and a second high-frequency power of a second frequency, which is lower than the first frequency, are applied to a lower electrode, and the first high-frequency power is applied in a pulse form.

Abstract: A substrate cleaning apparatus includes a supporting unit, provided in a processing chamber having a gas exhaust port, for supporting a substrate; one or more nozzle units, each for ejecting gas clusters to a peripheral portion of the substrate supported by the supporting unit to remove unnecessary substances from the peripheral portion; and a moving mechanism for changing relative positions of the supporting unit and the nozzle unit during ejecting the gas clusters. Each nozzle unit discharges a cleaning gas having a pressure higher than that in the processing chamber so that the cleaning gas is adiabatically expanded to form aggregates of atoms and/or molecules.