Patents by Inventor Kentaro Doguchi
Kentaro Doguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240421349Abstract: A solid electrolyte contains a borate containing Li, an element R selected from a group including Yb, Er, Tm, and La, and an element M1 selected from a group including Mg, Sr, and Ca.Type: ApplicationFiled: August 23, 2024Publication date: December 19, 2024Inventors: YOHEI MASADA, TAKAHARU AOTANI, KENTARO DOGUCHI
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Publication number: 20230387459Abstract: A solid electrolyte contains a borate containing Li, an element R selected from a group including Yb, Er, Ho, Tm, La, Nd, and Sm, and an element M selected from a group including Zr, Ce, and Sn.Type: ApplicationFiled: August 15, 2023Publication date: November 30, 2023Inventors: Kentaro DOGUCHI, Yohei MASADA, Takaharu AOTANI, Hiroshi TANIUCHI
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Publication number: 20220302497Abstract: An ion conductive solid comprising an oxide represented by general formula: Li6-x-y-2zY1-x-y-zM1xM2yM3zB3O9 in formula, M1 and M2 are each independently at least one metal element selected from a group of Zr, Ce and Sn, M3 is Nb, and x, y, and z represent real numbers satisfying 0.000?x+y<1.000, 0.000?z?1.000, and 0.000<x+y+z<1.000.Type: ApplicationFiled: June 6, 2022Publication date: September 22, 2022Inventors: Yoshitaka SHIBA, Noriko SAKAMOTO, Kentaro DOGUCHI, Takeshi KOBAYASHI, Toyoki OKUMURA, Hironori KOBAYASHI, Tomonari TAKEUCHI
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Patent number: 8338003Abstract: An optical element comprising a vacuum-sintered body comprising a plurality of particles each having a two-layer structure comprising a ceramic particle and a coating layer, wherein the ceramic particle comprises LnxAlyO[x+y]×1.5, where Ln represents a rare-earth element, x represents 1?x?10, and y represents 1?y?5, and has an average particle diameter of 1 ?m or more and 10 ?m or less, and wherein the coating layer comprises a ceramic having a lower sintering temperature than a sintering temperature of the ceramic particle.Type: GrantFiled: March 31, 2011Date of Patent: December 25, 2012Assignee: Canon Kabushiki KaishaInventors: Kohei Nakata, Michio Endo, Kentaro Doguchi, Shigeru Fujino
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Patent number: 8202813Abstract: An optical element is formed by vacuum-sintering a molded body of ceramic particles having an average particle diameter of 1 ?m or more and 10 ?m or less and including LnxAlyO[x+y]×1.5 (Ln represents a rare-earth element, 1?x?10, and 1?y?5). Ln preferably includes at least one kind selected from La, Gd, Yb, and Lu. The optical element preferably has a refractive index of 1.85 or more and 2.06 or less, and an Abbe number of 48 or more and 65 or less. The obtained optical element has optical properties of high refractive index and low dispersibility.Type: GrantFiled: February 1, 2012Date of Patent: June 19, 2012Assignee: Canon Kabushiki KaishaInventors: Kohei Nakata, Michio Endo, Kentaro Doguchi, Shigeru Fujino
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Publication number: 20120126437Abstract: An optical element is formed by vacuum-sintering a molded body of ceramic particles having an average particle diameter of 1 ?m or more and 10 ?m or less and including LnxAlyO[x+y]×1.5 (Ln represents a rare-earth element, 1?x?10, and 1?y?5). Ln preferably includes at least one kind selected from La, Gd, Yb, and Lu. The optical element preferably has a refractive index of 1.85 or more and 2.06 ?m or less, and an Abbe number of 48 or more and 65 or less. The obtained optical element has optical properties of high refractive index and low dispersibility.Type: ApplicationFiled: February 1, 2012Publication date: May 24, 2012Applicant: CANON KABUSHIKI KAISHAInventors: Kohei Nakata, Michio Endo, Kentaro Doguchi, Shigeru Fujino
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Publication number: 20110177323Abstract: Provided is an optical element, which is formed by vacuum-sintering a molded body of ceramic particles having an average particle diameter of 1 ?m or more and 10 ?m or less and including LnxAlyO|x+y|×1.5 (Ln represents a rare-earth element, x represents 1?x?10, and y represents 1?y?5). Ln preferably includes at least one kind selected from La, Gd, Yb, and Lu. The optical element preferably has a refractive index of 1.85 or more and 2.06 ?m or less, and an Abbe number of 48 or more and 65 or less. The optical element having optical properties of high refractive index and low dispersibility is obtained.Type: ApplicationFiled: March 31, 2011Publication date: July 21, 2011Applicant: CANON KABUSHIKI KAISHAInventors: Kohei Nakata, Michio Endo, Kentaro Doguchi, Shigeru Fujino
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Publication number: 20100141911Abstract: An exposure apparatus, exposing a substrate via liquid so as to transfer a pattern of a mask onto the substrate, includes a stage configured to move while holding the substrate. The stage includes a substrate supporting portion on which the substrate is disposed, a supporting surface disposed outside the substrate supporting portion configured to support the liquid together with the substrate, and a frame portion formed so as to surround the supporting surface. The frame portion includes a depression and a member whose top surface is located in a plane including the supporting surface.Type: ApplicationFiled: December 7, 2009Publication date: June 10, 2010Applicant: CANON KABUSHIKI KAISHAInventors: Keiji Emoto, Yutaka Watanabe, Yasuyuki Tamura, Noriyasu Hasegawa, Kentaro Doguchi, Hisashi Namba, Keiji Yamashita
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Publication number: 20100097584Abstract: An exposure apparatus which exposes a substrate via a liquid supplied between a projection optical system and the substrate, the apparatus comprises a gas supply-recovery mechanism configured to blow a gas around the liquid, wherein the gas supply-recovery mechanism includes a nozzle unit in which a supply port configured to supply the gas, and a recovery port which is arranged nearer to an optical axis of the projection optical system than the supply port and is configured to recover the gas are formed, and wherein the nozzle unit is configured such that a first portion which is adjacent to the supply port and is nearer to the optical axis than the supply port is closer to an image plane of the projection optical system than a second portion which is adjacent to the supply port and is farther from the optical axis than the supply port.Type: ApplicationFiled: December 5, 2007Publication date: April 22, 2010Applicant: CANON KABUSHIKI KAISHAInventor: Kentaro Doguchi
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Publication number: 20100081561Abstract: Provided is an optical element, which is formed by vacuum-sintering a molded body of ceramic particles having an average particle diameter of 1 ?m or more and 10 ?m or less and including LnxAlyO[x+y]×1.5 (Ln represents a rare-earth element, x represents 1?x?10, and y represents 1?y?5). Ln preferably includes at least one kind selected from La, Gd, Yb, and Lu. The optical element preferably has a refractive index of 1.85 or more and 2.06 ?m or less, and an Abbe number of 48 or more and 65 or less. The optical element having optical properties of high refractive index and low dispersibility is obtained.Type: ApplicationFiled: September 1, 2009Publication date: April 1, 2010Applicant: CANON KABUSHIKI KAISHAInventors: Kohei Nakata, Michio Endo, Kentaro Doguchi, Shigeru Fujino
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Publication number: 20050227849Abstract: A method for manufacturing fluoride crystal includes the steps of adding scavenger and a material to a crucible, melting the scavenger and material at a temperature higher than a melting point so that a ratio of a thickness of the fluoride crystal that has been melted to an inner diameter of the crucible may be 0.2 or higher, and gradually crystallizing and purifying the material.Type: ApplicationFiled: May 18, 2005Publication date: October 13, 2005Inventor: Kentaro Doguchi
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Patent number: 6929694Abstract: A method for manufacturing fluoride crystal includes the steps of adding scavenger and a material to a crucible, melting the scavenger and material at a temperature higher than a melting point so that a ratio of a thickness of the fluoride crystal that has been melted to an inner diameter of the crucible may be 0.2 or higher, and gradually crystallizing and purifying the material.Type: GrantFiled: February 19, 2003Date of Patent: August 16, 2005Assignee: Canon Kabushiki KaishaInventor: Kentaro Doguchi
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Publication number: 20040261691Abstract: A crystallization apparatus includes a crucible housing a crystalloid material, which includes a seed crystal housing part for housing a seed crystal that is grown into a single crystal from the material, a support component that is connected with the seed crystal housing part of the crucible to support the crucible, a heater that is arranged in a periphery part of the crucible for heating the crucible, and a cooling component with an adjustable cooling capacity that is arrange inside the support component.Type: ApplicationFiled: June 23, 2004Publication date: December 30, 2004Inventor: Kentaro Doguchi
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Publication number: 20030154905Abstract: A method for manufacturing fluoride crystal includes the steps of adding scavenger and a material to a crucible, melting the scavenger and material at a temperature higher than a melting point so that a ratio of a thickness of the fluoride crystal that has been melted to an inner diameter of the crucible may be 0.2 or higher, and gradually crystallizing and purifying the material.Type: ApplicationFiled: February 19, 2003Publication date: August 21, 2003Inventor: Kentaro Doguchi
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Patent number: 5712504Abstract: A pin type light-receiving device according to the present invention comprises (a) a semiconductor substrate, (b) a first semiconductor layer formed on a semiconductor substrate and doped with an impurity of a first conduction type, (c) a second semiconductor layer formed in a mesa shape on the first semiconductor layer and made of a first semiconductor material without intentionally doping the first semiconductor material with an impurity, (d) a third semiconductor layer formed in a mesa shape on the second semiconductor layer and made of the first semiconductor material doped with an impurity of a second conduction type different from the first conduction type, (e) a first electrode layer formed in ohmic contact on the first semiconductor layer, (f) a second electrode layer formed in ohmic contact on the third semiconductor layer, and (g) a fourth semiconductor layer formed around the first to the third semiconductor layers and made of a second semiconductor material having a band gap energy greater than thType: GrantFiled: February 2, 1996Date of Patent: January 27, 1998Assignee: Sumitomo Electric Industries, Ltd.Inventors: Hiroshi Yano, Kentaro Doguchi, Sosaku Sawada, Takeshi Sekiguchi
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Patent number: 5546489Abstract: In an optical link apparatus of the present invention, a hybrid IC which is a main amplifier of a receiver circuit, and a hybrid IC which is a transmitter circuit are mounted on an island of a lead frame. An OEIC in which electronic devices and a light receiving device which constitute a preamplifier of the receiver circuit are integrated is housed in a light receiving device unit. A light emitting device is housed in a light emitting device unit. Sleeves which are optical link components are installed at the light receiving device unit and the light emitting device unit, and one ends of the sleeves are protruded from a plastic molding to the outside. As wires are connected to lead pins, the hybrid ICs are electrically connected with the light receiving device unit and the light emitting device unit. The lead pins, the hybrid ICs, the light receiving device unit, the light emitting device unit, and the sleeves are integrally sealed by a plastic molding which is superior in productivity and processability.Type: GrantFiled: August 28, 1995Date of Patent: August 13, 1996Assignee: Sumitomo Electric Industries, Ltd.Inventors: Goro Sasaki, Hiroshi Yano, Sosaku Sawada, Kentaro Doguchi
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Patent number: 5489798Abstract: In an opto-electronic integrated circuit of the present invention, in a first surface region of a semiconductor substrate, a pin-type photodiode is constituted on the basis of a photodiode layer formed on a first transistor layer. In a second surface region of the semiconductor substrate, a heterojunction bipolar transistor is constituted on the basis of only a second transistor layer separated form the first transistor layer. Since a plurality of heterojunction bipolar transistors are normally integrated for one pin-type photodiode, the thickness of the heterojunction bipolar transistors larger in number than the pin-type photodiode is set regardless of the thickness of the pin-type photodiode. The thickness of a high-resistance layer in the pin-type photodiode is set with an increased degree of freedom.Type: GrantFiled: June 29, 1994Date of Patent: February 6, 1996Assignee: Sumitomo Electric Industries, Ltd.Inventors: Kentaro Doguchi, Goro Sasaki, Hiroshi Yano, Sosaku Sawada