Patents by Inventor Kentaro Doguchi

Kentaro Doguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240421349
    Abstract: A solid electrolyte contains a borate containing Li, an element R selected from a group including Yb, Er, Tm, and La, and an element M1 selected from a group including Mg, Sr, and Ca.
    Type: Application
    Filed: August 23, 2024
    Publication date: December 19, 2024
    Inventors: YOHEI MASADA, TAKAHARU AOTANI, KENTARO DOGUCHI
  • Publication number: 20230387459
    Abstract: A solid electrolyte contains a borate containing Li, an element R selected from a group including Yb, Er, Ho, Tm, La, Nd, and Sm, and an element M selected from a group including Zr, Ce, and Sn.
    Type: Application
    Filed: August 15, 2023
    Publication date: November 30, 2023
    Inventors: Kentaro DOGUCHI, Yohei MASADA, Takaharu AOTANI, Hiroshi TANIUCHI
  • Publication number: 20220302497
    Abstract: An ion conductive solid comprising an oxide represented by general formula: Li6-x-y-2zY1-x-y-zM1xM2yM3zB3O9 in formula, M1 and M2 are each independently at least one metal element selected from a group of Zr, Ce and Sn, M3 is Nb, and x, y, and z represent real numbers satisfying 0.000?x+y<1.000, 0.000?z?1.000, and 0.000<x+y+z<1.000.
    Type: Application
    Filed: June 6, 2022
    Publication date: September 22, 2022
    Inventors: Yoshitaka SHIBA, Noriko SAKAMOTO, Kentaro DOGUCHI, Takeshi KOBAYASHI, Toyoki OKUMURA, Hironori KOBAYASHI, Tomonari TAKEUCHI
  • Patent number: 8338003
    Abstract: An optical element comprising a vacuum-sintered body comprising a plurality of particles each having a two-layer structure comprising a ceramic particle and a coating layer, wherein the ceramic particle comprises LnxAlyO[x+y]×1.5, where Ln represents a rare-earth element, x represents 1?x?10, and y represents 1?y?5, and has an average particle diameter of 1 ?m or more and 10 ?m or less, and wherein the coating layer comprises a ceramic having a lower sintering temperature than a sintering temperature of the ceramic particle.
    Type: Grant
    Filed: March 31, 2011
    Date of Patent: December 25, 2012
    Assignee: Canon Kabushiki Kaisha
    Inventors: Kohei Nakata, Michio Endo, Kentaro Doguchi, Shigeru Fujino
  • Patent number: 8202813
    Abstract: An optical element is formed by vacuum-sintering a molded body of ceramic particles having an average particle diameter of 1 ?m or more and 10 ?m or less and including LnxAlyO[x+y]×1.5 (Ln represents a rare-earth element, 1?x?10, and 1?y?5). Ln preferably includes at least one kind selected from La, Gd, Yb, and Lu. The optical element preferably has a refractive index of 1.85 or more and 2.06 or less, and an Abbe number of 48 or more and 65 or less. The obtained optical element has optical properties of high refractive index and low dispersibility.
    Type: Grant
    Filed: February 1, 2012
    Date of Patent: June 19, 2012
    Assignee: Canon Kabushiki Kaisha
    Inventors: Kohei Nakata, Michio Endo, Kentaro Doguchi, Shigeru Fujino
  • Publication number: 20120126437
    Abstract: An optical element is formed by vacuum-sintering a molded body of ceramic particles having an average particle diameter of 1 ?m or more and 10 ?m or less and including LnxAlyO[x+y]×1.5 (Ln represents a rare-earth element, 1?x?10, and 1?y?5). Ln preferably includes at least one kind selected from La, Gd, Yb, and Lu. The optical element preferably has a refractive index of 1.85 or more and 2.06 ?m or less, and an Abbe number of 48 or more and 65 or less. The obtained optical element has optical properties of high refractive index and low dispersibility.
    Type: Application
    Filed: February 1, 2012
    Publication date: May 24, 2012
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Kohei Nakata, Michio Endo, Kentaro Doguchi, Shigeru Fujino
  • Publication number: 20110177323
    Abstract: Provided is an optical element, which is formed by vacuum-sintering a molded body of ceramic particles having an average particle diameter of 1 ?m or more and 10 ?m or less and including LnxAlyO|x+y|×1.5 (Ln represents a rare-earth element, x represents 1?x?10, and y represents 1?y?5). Ln preferably includes at least one kind selected from La, Gd, Yb, and Lu. The optical element preferably has a refractive index of 1.85 or more and 2.06 ?m or less, and an Abbe number of 48 or more and 65 or less. The optical element having optical properties of high refractive index and low dispersibility is obtained.
    Type: Application
    Filed: March 31, 2011
    Publication date: July 21, 2011
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Kohei Nakata, Michio Endo, Kentaro Doguchi, Shigeru Fujino
  • Publication number: 20100141911
    Abstract: An exposure apparatus, exposing a substrate via liquid so as to transfer a pattern of a mask onto the substrate, includes a stage configured to move while holding the substrate. The stage includes a substrate supporting portion on which the substrate is disposed, a supporting surface disposed outside the substrate supporting portion configured to support the liquid together with the substrate, and a frame portion formed so as to surround the supporting surface. The frame portion includes a depression and a member whose top surface is located in a plane including the supporting surface.
    Type: Application
    Filed: December 7, 2009
    Publication date: June 10, 2010
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Keiji Emoto, Yutaka Watanabe, Yasuyuki Tamura, Noriyasu Hasegawa, Kentaro Doguchi, Hisashi Namba, Keiji Yamashita
  • Publication number: 20100097584
    Abstract: An exposure apparatus which exposes a substrate via a liquid supplied between a projection optical system and the substrate, the apparatus comprises a gas supply-recovery mechanism configured to blow a gas around the liquid, wherein the gas supply-recovery mechanism includes a nozzle unit in which a supply port configured to supply the gas, and a recovery port which is arranged nearer to an optical axis of the projection optical system than the supply port and is configured to recover the gas are formed, and wherein the nozzle unit is configured such that a first portion which is adjacent to the supply port and is nearer to the optical axis than the supply port is closer to an image plane of the projection optical system than a second portion which is adjacent to the supply port and is farther from the optical axis than the supply port.
    Type: Application
    Filed: December 5, 2007
    Publication date: April 22, 2010
    Applicant: CANON KABUSHIKI KAISHA
    Inventor: Kentaro Doguchi
  • Publication number: 20100081561
    Abstract: Provided is an optical element, which is formed by vacuum-sintering a molded body of ceramic particles having an average particle diameter of 1 ?m or more and 10 ?m or less and including LnxAlyO[x+y]×1.5 (Ln represents a rare-earth element, x represents 1?x?10, and y represents 1?y?5). Ln preferably includes at least one kind selected from La, Gd, Yb, and Lu. The optical element preferably has a refractive index of 1.85 or more and 2.06 ?m or less, and an Abbe number of 48 or more and 65 or less. The optical element having optical properties of high refractive index and low dispersibility is obtained.
    Type: Application
    Filed: September 1, 2009
    Publication date: April 1, 2010
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Kohei Nakata, Michio Endo, Kentaro Doguchi, Shigeru Fujino
  • Publication number: 20050227849
    Abstract: A method for manufacturing fluoride crystal includes the steps of adding scavenger and a material to a crucible, melting the scavenger and material at a temperature higher than a melting point so that a ratio of a thickness of the fluoride crystal that has been melted to an inner diameter of the crucible may be 0.2 or higher, and gradually crystallizing and purifying the material.
    Type: Application
    Filed: May 18, 2005
    Publication date: October 13, 2005
    Inventor: Kentaro Doguchi
  • Patent number: 6929694
    Abstract: A method for manufacturing fluoride crystal includes the steps of adding scavenger and a material to a crucible, melting the scavenger and material at a temperature higher than a melting point so that a ratio of a thickness of the fluoride crystal that has been melted to an inner diameter of the crucible may be 0.2 or higher, and gradually crystallizing and purifying the material.
    Type: Grant
    Filed: February 19, 2003
    Date of Patent: August 16, 2005
    Assignee: Canon Kabushiki Kaisha
    Inventor: Kentaro Doguchi
  • Publication number: 20040261691
    Abstract: A crystallization apparatus includes a crucible housing a crystalloid material, which includes a seed crystal housing part for housing a seed crystal that is grown into a single crystal from the material, a support component that is connected with the seed crystal housing part of the crucible to support the crucible, a heater that is arranged in a periphery part of the crucible for heating the crucible, and a cooling component with an adjustable cooling capacity that is arrange inside the support component.
    Type: Application
    Filed: June 23, 2004
    Publication date: December 30, 2004
    Inventor: Kentaro Doguchi
  • Publication number: 20030154905
    Abstract: A method for manufacturing fluoride crystal includes the steps of adding scavenger and a material to a crucible, melting the scavenger and material at a temperature higher than a melting point so that a ratio of a thickness of the fluoride crystal that has been melted to an inner diameter of the crucible may be 0.2 or higher, and gradually crystallizing and purifying the material.
    Type: Application
    Filed: February 19, 2003
    Publication date: August 21, 2003
    Inventor: Kentaro Doguchi
  • Patent number: 5712504
    Abstract: A pin type light-receiving device according to the present invention comprises (a) a semiconductor substrate, (b) a first semiconductor layer formed on a semiconductor substrate and doped with an impurity of a first conduction type, (c) a second semiconductor layer formed in a mesa shape on the first semiconductor layer and made of a first semiconductor material without intentionally doping the first semiconductor material with an impurity, (d) a third semiconductor layer formed in a mesa shape on the second semiconductor layer and made of the first semiconductor material doped with an impurity of a second conduction type different from the first conduction type, (e) a first electrode layer formed in ohmic contact on the first semiconductor layer, (f) a second electrode layer formed in ohmic contact on the third semiconductor layer, and (g) a fourth semiconductor layer formed around the first to the third semiconductor layers and made of a second semiconductor material having a band gap energy greater than th
    Type: Grant
    Filed: February 2, 1996
    Date of Patent: January 27, 1998
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Hiroshi Yano, Kentaro Doguchi, Sosaku Sawada, Takeshi Sekiguchi
  • Patent number: 5546489
    Abstract: In an optical link apparatus of the present invention, a hybrid IC which is a main amplifier of a receiver circuit, and a hybrid IC which is a transmitter circuit are mounted on an island of a lead frame. An OEIC in which electronic devices and a light receiving device which constitute a preamplifier of the receiver circuit are integrated is housed in a light receiving device unit. A light emitting device is housed in a light emitting device unit. Sleeves which are optical link components are installed at the light receiving device unit and the light emitting device unit, and one ends of the sleeves are protruded from a plastic molding to the outside. As wires are connected to lead pins, the hybrid ICs are electrically connected with the light receiving device unit and the light emitting device unit. The lead pins, the hybrid ICs, the light receiving device unit, the light emitting device unit, and the sleeves are integrally sealed by a plastic molding which is superior in productivity and processability.
    Type: Grant
    Filed: August 28, 1995
    Date of Patent: August 13, 1996
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Goro Sasaki, Hiroshi Yano, Sosaku Sawada, Kentaro Doguchi
  • Patent number: 5489798
    Abstract: In an opto-electronic integrated circuit of the present invention, in a first surface region of a semiconductor substrate, a pin-type photodiode is constituted on the basis of a photodiode layer formed on a first transistor layer. In a second surface region of the semiconductor substrate, a heterojunction bipolar transistor is constituted on the basis of only a second transistor layer separated form the first transistor layer. Since a plurality of heterojunction bipolar transistors are normally integrated for one pin-type photodiode, the thickness of the heterojunction bipolar transistors larger in number than the pin-type photodiode is set regardless of the thickness of the pin-type photodiode. The thickness of a high-resistance layer in the pin-type photodiode is set with an increased degree of freedom.
    Type: Grant
    Filed: June 29, 1994
    Date of Patent: February 6, 1996
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Kentaro Doguchi, Goro Sasaki, Hiroshi Yano, Sosaku Sawada