Abstract: There is provided a semiconductor device that comprises a layered structure configured by layering a first compound semiconductor layer, an active layer, and a second compound semiconductor layer. The semiconductor device further includes a substrate, a first light reflecting layer arranged on the first surface side of the first compound semiconductor layer, and a second light reflecting layer arranged on the second surface side of the second compound semiconductor layer. Further, the second light reflecting layer has a flat shape, a concave surface portion is formed on a substrate surface, the first light reflecting layer is formed on at least the concave surface portion, the first compound semiconductor layer is formed to extend from the substrate surface onto the concave surface portion, and a cavity is present between the first light reflecting layer and the first compound semiconductor layer.

Abstract: A conductive layer structure includes a first conductive layer and a second conductive layer that is electrically coupled to the first conductive layer with an adhesion layer interposed. The adhesion layer has conductivity and has a higher adhesiveness to each of the first conductive layer and the second conductive layer than adhesiveness between the first conductive layer and the second conductive layer. The second conductive layer is less likely to deteriorate than the adhesion layer, and covers an end surface and an upper surface of the adhesion layer while covering a portion of the first conductive layer.

Abstract: A light emitting element includes a stacked structure including, in a stacked state, a first light reflection layer 41 in which a plurality of thin films is stacked, a light emitting structure 20, and a second light reflection layer 42 in which a plurality of thin films is stacked. The light emitting structure includes a first compound semiconductor layer 21, an active layer 23 and, a second compound semiconductor layer 22 which are stacked. The light emitting structure 20 is formed with a light absorbing material layer 71 (32) in parallel to a virtual plane occupied by the active layer 23.

Abstract: A cephalopod breeding method, which is for breeding cephalopod larvae in a breeding water tank, comprises, during the floating breeding period of the cephalopod larvae, forming a high concentration area where the salinity concentration is higher compared to seawater at the bottom of the breeding water tank and, after the passage of a predetermined time from the formation of the high concentration area, removing the high concentration area.

Abstract: Provided is a method for rearing Artemias in a feeding water tank, wherein a feed containing a mollusk-derived feed is poured into the feeding water tank. Provided is a feed for Artemia that contains a mollusk-derived feed. Provided is an Artemia which satisfies at least one of the following requirements at 6 days of age: body width being greater than 0.183 mm; body height being greater than 0.179 mm; and volume greater than 0.099 mm3.

Abstract: This cephalopod breeding method is a method for breeding cephalopod larvae in a rearing tank having a water changing means. The method includes a water-changing period during which the ratio of water changed by the water-changing means per day is 200% or more relative to the quantity of water in the rearing tank in a floating breeding period of the cephalopod larvae.

Abstract: A light emitting element comprising a layered structure configured by layering a first light reflecting layer 41 configured by layering a plurality of thin films, a light emitting structure 20, and a second light reflecting layer 42 configured by layering a plurality of thin films, wherein the light emitting structure 20 is configured by layering, from the first light reflecting layer side, a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22, a second electrode 32 and an intermediate layer 70 are formed between the second compound semiconductor layer 22 and the second light reflecting layer 42 from the second compound semiconductor layer side, and the value of a surface roughness of a second surface 72 of the intermediate layer 70 in contact with the second light reflecting layer 42 is less than the value of a surface roughness of a first surface 71 of the intermediate layer 70 facing the second electrode 32.

Abstract: The present disclosure relates to an imaging device, an imaging operation device, and a control method that enable better imaging. A reaction force generating unit generates a reaction force with respect to the operation direction of the operation unit, and a control unit sets the reaction force on the basis of imaging-related information during operation on the operation unit. Further, the operation unit gives an instruction on a start of image capture by the imaging device, a position detection unit detects an amount of operation with respect to the operation direction of the operation unit, and the control unit sets the reaction force according to the amount of operation. The present technology can be applied, for example, to imaging devices such as single-lens reflex cameras and compact cameras.

Abstract: The present disclosure relates to an imaging device, an imaging operation device, and a control method that enable better imaging. A reaction force generating unit generates a reaction force with respect to the operation direction of the operation unit, and a control unit sets the reaction force on the basis of imaging-related information during operation on the operation unit. Further, the operation unit gives an instruction on a start of image capture by the imaging device, a position detection unit detects an amount of operation with respect to the operation direction of the operation unit, and the control unit sets the reaction force according to the amount of operation. The present technology can be applied, for example, to imaging devices such as single-lens reflex cameras and compact cameras.

Abstract: A light emitting element comprising a layered structure configured by layering a first light reflecting layer 41 configured by layering a plurality of thin films, a light emitting structure 20, and a second light reflecting layer 42 configured by layering a plurality of thin films, wherein the light emitting structure 20 is configured by layering, from the first light reflecting layer side, a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22, a second electrode 32 and an intermediate layer 70 are formed between the second compound semiconductor layer 22 and the second light reflecting layer 42 from the second compound semiconductor layer side, and the value of a surface roughness of a second surface 72 of the intermediate layer 70 in contact with the second light reflecting layer 42 is less than the value of a surface roughness of a first surface 71 of the intermediate layer 70 facing the second electrode 32.

Abstract: Provided is a light-emitting device that includes a first electrode layer, a first conduction type layer, a second conduction type layer, an active layer, and a second electrode layer. The first conduction type layer includes a current injection region formed by the first electrode layer and a current non-injection region. A waveguide structure included in the first conduction type layer, the active layer, and the second conduction type layer includes a first region and a second region. The first region has a first waveguide that is the current injection region and the current non-injection region and has a first refractive index difference. The second region has a second waveguide arranged to be extended from the first waveguide to the first end and has a second refractive index difference greater than the first refractive index difference. The second waveguide has a region narrowing toward the first end.

Abstract: A semiconductor device comprising: a layered structure 20 configured by layering a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22; a substrate 11; a first light reflecting layer 41 arranged on the first surface side of the first compound semiconductor layer 21; and a second light reflecting layer 42 arranged on the second surface side of the second compound semiconductor layer 22, wherein the second light reflecting layer 42 has a flat shape; a concave surface portion 12 is formed on a substrate surface 11b; the first light reflecting layer 41 is formed on at least the concave surface portion 12; the first compound semiconductor layer 21 is formed to extend from the substrate surface 11b onto the concave surface portion 12; and a cavity is present between the first light reflecting layer 41 formed on the concave surface portion 12 and the first compound semiconductor layer 21.

Abstract: [Object] To provide an optical device and a display apparatus capable of decreasing a waveguide loss, inhibiting a laser oscillation, and achieving a high-output. [Solving Means] An optical device includes a first electrode layer, a first conduction type layer, a second conduction type layer, an active layer, and a second electrode layer. The first conduction type layer includes a current injection region formed by the first electrode layer and a current non-injection region. A waveguide structure included in the first conduction type layer, the active layer, and the second conduction type layer includes a first region and a second region. The first region has a first waveguide that is the current injection region and the current non-injection region and having a first refractive index difference. The second region has a second waveguide arranged to be extended from the first waveguide to the first end and has a second refractive index difference greater than the first refractive index difference.

Abstract: In a power generation system, exhausted fuel gas exhausted from a solid oxide fuel cell (SOFC) is used as a fuel of a first combustor or a second combustor of a gas turbine, and at the same time, a part of compressed air compressed by a compressor of the gas turbine is used to drive the SOFC. The gas turbine includes the first combustor for burning fuel gas which is different from the exhausted fuel gas, a first turbine configured to be driven by combustion gas supplied from the first combustor, the second combustor for burning at least a part of the exhausted fuel gas, and a second turbine coupled with the first turbine and configured to be driven by combustion gas supplied from the second combustor.

Abstract: A light emitting element includes a stacked structure including, in a stacked state, a first light reflection layer 41 in which a plurality of thin films is stacked, a light emitting structure 20, and a second light reflection layer 42 in which a plurality of thin films is stacked. The light emitting structure includes a first compound semiconductor layer 21, an active layer 23 and, a second compound semiconductor layer 22 which are stacked. The light emitting structure 20 is formed with a light absorbing material layer 71 (32) in parallel to a virtual plane occupied by the active layer 23.

Abstract: [Object] To provide an optical device and a display apparatus capable of decreasing a waveguide loss, inhibiting a laser oscillation, and achieving a high-output. [Solving Means] An optical device includes a first electrode layer, a first conduction type layer, a second conduction type layer, an active layer, and a second electrode layer. The first conduction type layer includes a current injection region formed by the first electrode layer and a current non-injection region. A waveguide structure included in the first conduction type layer, the active layer, and the second conduction type layer includes a first region and a second region. The first region has a first waveguide that is the current injection region and the current non-injection region and having a first refractive index difference. The second region has a second waveguide arranged to be extended from the first waveguide to the first end and has a second refractive index difference greater than the first refractive index difference.

Abstract: [Object] To provide an optical element and a display apparatus capable of reducing a waveguide loss and achieving laser oscillation suppression and a high output. [Solving Means] An optical element according to the present technology includes a substrate, a first end which is a light emission end, and a second end provided on an opposite side to the first end, the optical element including a first electrode layer, a first semiconductor layer, a second semiconductor layer, an active layer, and a second electrode layer. The first electrode layer has a stripe form extended from the second end toward the first end. A waveguide structure included in the first conductivity type layer, the active layer, and second conductivity type layer includes a first waveguide and a second waveguide, and the second waveguide has a tapered structure that makes a beam spot of light incident from the first waveguide smaller.

Abstract: [Object] To provide an optical element and a display apparatus capable of reducing a waveguide loss and achieving laser oscillation suppression and a high output. [Solving Means] An optical element according to the present technology includes a substrate, a first end which is a light emission end, and a second end provided on an opposite side to the first end, the optical element including a first electrode layer, a first semiconductor layer, a second semiconductor layer, an active layer, and a second electrode layer. The first electrode layer has a stripe form extended from the second end toward the first end. A waveguide structure included in the first conductivity type layer, the active layer, and second conductivity type layer includes a first waveguide and a second waveguide, and the second waveguide has a tapered structure that makes a beam spot of light incident from the first waveguide smaller.

Abstract: In a power generation system, exhausted fuel gas exhausted from a solid oxide fuel cell (SOFC) is used as a fuel of a first combustor or a second combustor of a gas turbine, and at the same time, a part of compressed air compressed by a compressor of the gas turbine is used to drive the SOFC. The gas turbine includes the first combustor for burning fuel gas which is different from the exhausted fuel gas, a first turbine configured to be driven by combustion gas supplied from the first combustor, the second combustor for burning at least a part of the exhausted fuel gas, and a second turbine coupled with the first turbine and configured to be driven by combustion gas supplied from the second combustor.