Abstract: One or more embodiments of the disclosure may be a surgical system that may include: a surgical robot; an operating device configured to be operated by a doctor to operate the surgical robot; and a controller. The operating device includes a component for which a setting is adjustable, and an information reader configured to acquire user information from a storage medium that stores the user information including user identification information and setting information of the component. The controller is configured control the component to adjust the setting of the component based on the setting information acquired from the storage medium by the information reader.

Abstract: The semiconductor device includes a Hall element, a first differential pair, a second differential pair, an output amplifier circuit, and a voltage divider circuit. The Hall element outputs a signal that is dependent on stress to be applied to a semiconductor substrate to the first differential pair. The voltage divider circuit divides a voltage into a divided voltage having a voltage dividing ratio that is dependent on the stress. The first differential pair outputs a first current based on the signal. The second differential pair outputs a second current based on the divided voltage and a reference voltage. The output amplifier circuit outputs a voltage based on the first and second currents. A gain of the output amplifier circuit is approximated by a sum of a difference between stress dependence coefficients of transconductances of the first and second differential pairs and a stress dependence coefficient of the voltage dividing ratio.

Abstract: A semiconductor device formed on a semiconductor substrate of a P type includes: a vertical resistor circuit including a resistor of an N type, the resistor forming a current path in a direction perpendicular to a surface of the semiconductor substrate; a Hall element provided on the semiconductor substrate, the Hall element being configured to supply a voltage proportional to a magnetic flux density in the direction perpendicular to the surface of the semiconductor substrate; an amplifier configured to amplify the voltage supplied from the Hall element, and supply the amplified voltage; a current/voltage conversion circuit configured to supply, as a comparison reference voltage, a voltage containing a product of a reference current IREF flowing through the vertical resistor circuit and a resistance value RREF of the vertical resistor circuit; and a comparator configured to receive the voltage supplied from the amplifier and the comparison reference voltage.

Abstract: The semiconductor device includes a Hall element, a first differential pair, a second differential pair, an output amplifier circuit, and a voltage divider circuit. The Hall element outputs a signal that is dependent on stress to be applied to a semiconductor substrate to the first differential pair. The voltage divider circuit divides a voltage into a divided voltage having a voltage dividing ratio that is dependent on the stress. The first differential pair outputs a first current based on the signal. The second differential pair outputs a second current based on the divided voltage and a reference voltage. The output amplifier circuit outputs a voltage based on the first and second currents. A gain of the output amplifier circuit is approximated by a sum of a difference between stress dependence coefficients of transconductances of the first and second differential pairs and a stress dependence coefficient of the voltage dividing ratio.

Abstract: A stress compensation control circuit of the present invention is provided which is capable of using a compensation error similar to that at room temperature even at a high temperature and reducing the area of a chip for a semiconductor sensor as compared with the related art. The stress compensation control circuit compensates for a change in detection sensitivity due to a stress to be applied to the semiconductor sensor. The stress compensation control circuit includes a stress compensation voltage generating circuit generating a stress compensation voltage corresponding to the applied stress in accordance with a difference between changes in transconductance due to stresses in a first depletion transistor and a first enhancement transistor, and performs compensation for the detection sensitivity in correspondence to the stress applied to the semiconductor sensor.

Abstract: The semiconductor device includes a Hall element, a first differential pair, a second differential pair, an output amplifier circuit, and a voltage divider circuit. The Hall element outputs a signal that is dependent on stress to be applied to a semiconductor substrate to the first differential pair. The voltage divider circuit divides a voltage into a divided voltage having a voltage dividing ratio that is dependent on the stress. The first differential pair outputs a first current based on the signal. The second differential pair outputs a second current based on the divided voltage and a reference voltage. The output amplifier circuit outputs a voltage based on the first and second currents. A gain of the output amplifier circuit is approximated by a sum of a difference between stress dependence coefficients of transconductances of the first and second differential pairs and a stress dependence coefficient of the voltage dividing ratio.

Abstract: A semiconductor device formed on a semiconductor substrate of a P type includes: a vertical resistor circuit including a resistor of an N type, the resistor forming a current path in a direction perpendicular to a surface of the semiconductor substrate; a Hall element provided on the semiconductor substrate, the Hall element being configured to supply a voltage proportional to a magnetic flux density in the direction perpendicular to the surface of the semiconductor substrate; an amplifier configured to amplify the voltage supplied from the Hall element, and supply the amplified voltage; a current/voltage conversion circuit configured to supply, as a comparison reference voltage, a voltage containing a product of a reference current IREF flowing through the vertical resistor circuit and a resistance value RREF of the vertical resistor circuit; and a comparator configured to receive the voltage supplied from the amplifier and the comparison reference voltage.

Abstract: A constant current circuit includes a depletion-type NMOS transistor having a drain connected to a constant current output terminal, and a resistance element provided between the depletion-type NMOS transistor and a ground terminal. The depletion-type NMOS transistor includes a first depletion-type NMOS transistor and a second depletion-type NMOS transistor which are connected in parallel and arranged to have current directions forming an angle of 90 degrees. The resistance element includes a first resistor and a second resistor which are arranged to have current directions forming an angle of 90 degrees.

Abstract: The semiconductor device includes a Hall element, a first differential pair, a second differential pair, an output amplifier circuit, and a voltage divider circuit. The Hall element outputs a signal that is dependent on stress to be applied to a semiconductor substrate to the first differential pair. The voltage divider circuit divides a voltage into a divided voltage having a voltage dividing ratio that is dependent on the stress. The first differential pair outputs a first current based on the signal. The second differential pair outputs a second current based on the divided voltage and a reference voltage. The output amplifier circuit outputs a voltage based on the first and second currents. A gain of the output amplifier circuit is approximated by a sum of a difference between stress dependence coefficients of transconductances of the first and second differential pairs and a stress dependence coefficient of the voltage dividing ratio.

Abstract: A stress compensation control circuit of the present invention is provided which is capable of using a compensation error similar to that at room temperature even at a high temperature and reducing the area of a chip for a semiconductor sensor as compared with the related art. The stress compensation control circuit compensates for a change in detection sensitivity due to a stress to be applied to the semiconductor sensor. The stress compensation control circuit includes a stress compensation voltage generating circuit generating a stress compensation voltage corresponding to the applied stress in accordance with a difference between changes in transconductance due to stresses in a first depletion transistor and a first enhancement transistor, and performs compensation for the detection sensitivity in correspondence to the stress applied to the semiconductor sensor.

Abstract: Provided are a magnetic sensor, which is capable of accurately determining abnormalities, such as disconnection and a short circuit, of wiring of a magnetic sensor device, and the magnetic sensor device. An output control circuit of the magnetic sensor includes a voltage divider circuit, which is connected to an output terminal of the magnetic sensor, and an amplifier, which is configured to control a gate voltage of a MOS transistor, which is connected to the output terminal of the magnetic sensor, so that a voltage of the voltage divider circuit and a reference voltage become equal to each other, with the result that an output voltage of the magnetic sensor is determined by the reference voltage and a voltage dividing ratio of the voltage divider circuit.

Abstract: Provided are a magnetic sensor, which is capable of accurately determining abnormalities, such as disconnection and a short circuit, of wiring of a magnetic sensor device, and the magnetic sensor device. An output control circuit of the magnetic sensor includes a voltage divider circuit, which is connected to an output terminal of the magnetic sensor, and an amplifier, which is configured to control a gate voltage of a MOS transistor, which is connected to the output terminal of the magnetic sensor, so that a voltage of the voltage divider circuit and a reference voltage become equal to each other, with the result that an output voltage of the magnetic sensor is determined by the reference voltage and a voltage dividing ratio of the voltage divider circuit.

Abstract: Provided are a magnetic sensor, which is capable of accurately determining abnormalities, such as disconnection and a short circuit, of wiring of a magnetic sensor device, and the magnetic sensor device. An output control circuit of the magnetic sensor includes a voltage divider circuit, which is connected to an output terminal of the magnetic sensor, and an amplifier, which is configured to control a gate voltage of a MOS transistor, which is connected to the output terminal of the magnetic sensor, so that a voltage of the voltage divider circuit and a reference voltage become equal to each other, with the result that an output voltage of the magnetic sensor is determined by the reference voltage and a voltage dividing ratio of the voltage divider circuit.

Abstract: To provide a magnetic sensor which is reduced in power consumption without reducing magnetism detection sensitivity of a magnetoelectric transducing element. One end of a magnetoelectric transducing element is connected to an output electrode of a constant current circuit, and the other end thereof is connected to a power supply electrode on the positive side of one or plural signal processing circuits, and the like built in a magnetic sensor, whereby a connection relation of the magnetoelectric transducing element and the signal processing circuit is configured such that they are connected in series with a voltage source.

Abstract: Provided are a magnetic sensor, which is capable of accurately determining abnormalities, such as disconnection and a short circuit, of wiring of a magnetic sensor device, and the magnetic sensor device. An output control circuit of the magnetic sensor includes a voltage divider circuit, which is connected to an output terminal of the magnetic sensor, and an amplifier, which is configured to control a gate voltage of a MOS transistor, which is connected to the output terminal of the magnetic sensor, so that a voltage of the voltage divider circuit and a reference voltage become equal to each other, with the result that an output voltage of the magnetic sensor is determined by the reference voltage and a voltage dividing ratio of the voltage divider circuit.

Abstract: To provide a magnetic sensor circuit that outputs a desired detection pulse while preventing an erroneous detection/erroneous release pulse output when a fluctuation in a power supply voltage occurs within an operating power supply voltage range. A magnetic sensor circuit is configured to include a detection circuit that detects a fluctuation in a power supply voltage or an internal power supply voltage and so as not to latch a determination output of a comparator by a latch circuit that, on the basis of a power supply fluctuation detection signal output from the detection circuit, holds the logic of a control clock signal output from an oscillation circuit for a prescribed period of time and determines the output logic of an output terminal.

Abstract: The sensor device includes: a physical quantity voltage conversion element; a differential amplifier; a first capacitor that includes one terminal connected to a first output terminal of the differential amplifier; a comparator; a low pass filter circuit arranged at the first output terminal of the differential amplifier; a control circuit configured to on/off control the physical quantity voltage conversion element, the differential amplifier, the comparator, and the low pass filter circuit; and a logic circuit configured to output a result of operation processing performed on an output signal of the comparator. The logic circuit is configured to: successively verify, in a case where there is a change between a previous logic output and a first logic output, the logic outputs a plurality of times; and output a control signal to the control circuit so that the low pass filter circuit is turned on in a second signal processing period and thereafter.

Abstract: To provide a magnetic sensor device which maintains accuracy thereof while reducing current consumption by switching drive power of a Hall element to two drive power. A magnetic sensor device is equipped with a driving circuit which supplies power to a sensor element, a switch changeover circuit which restricts the supply of the power from the driving circuit to the sensor element, a differential amplifier circuit which performs arithmetic processing on an output signal of the sensor element, a threshold voltage generating circuit which generates a threshold voltage used in magnetism determination, a comparison circuit which compares and determines a voltage of the differential amplifier circuit and the threshold voltage, and a logic circuit which according to the output of the comparison circuit, switches the power outputted from the driving circuit, switches the threshold voltage and controls on/off of the switch changeover circuit in a constant cycle.

Abstract: Provided is a magnetic sensor device capable of performing signal processing at high speed with high accuracy. The magnetic sensor device includes: a plurality of Hall elements; a plurality of differential amplifiers to which the plurality of Hall elements are connected, respectively; a detection voltage setting circuit for outputting a reference voltage; and a comparator including: a plurality of differential input pairs connected to the plurality of differential amplifiers, respectively; and a differential input pair connected to the detection voltage setting circuit.

Abstract: Provided is a sensor device capable of removing the influence of each offset voltage of a sensor element, a differential amplifier, and an amplifier of the sensor device, to thereby detect a physical quantity with high precision and respond to high-speed operation.