Abstract: A multiplexer includes a first filter circuit including a pass band that is a first frequency band, a second filter circuit including a pass band that is a second frequency band, and an additional circuit. The first filter circuit includes a first terminal connected to a common terminal and a second terminal connected to a first input/output terminal. The second filter circuit includes a third terminal connected to the common terminal and a fourth terminal connected to a second input/output terminal. The additional circuit is connected to the fourth terminal and one of the first and second terminals and includes a series-arm circuit on a series-arm path connecting the fourth terminal to the one of the terminals and a parallel-arm circuit on a parallel-arm path connecting the series-arm path to the ground. The parallel-arm circuit includes only an inductor, a capacitor, or an LC parallel-arm resonant circuit in series with the parallel-arm path.

Abstract: A multiplexer includes a first filter circuit including a pass band that is a first frequency band, a second filter circuit including a pass band that is a second frequency band, and an additional circuit. The first filter circuit includes a first terminal connected to a common terminal and a second terminal connected to a first input/output terminal. The second filter circuit includes a third terminal connected to the common terminal and a fourth terminal connected to a second input/output terminal. The additional circuit is connected to the fourth terminal and one of the first and second terminals and includes a series-arm circuit on a series-arm path connecting the fourth terminal to the one of the terminals and a parallel-arm circuit on a parallel-arm path connecting the series-arm path to the ground. The parallel-arm circuit includes only an inductor, a capacitor, or an LC parallel-arm resonant circuit in series with the parallel-arm path.

Abstract: A surface acoustic wave device includes a piezoelectric substrate, an IDT electrode, a support layer, a cover layer, and a pillar-shaped electrode. The IDT electrode is provided on a main surface of the piezoelectric substrate. The support layer is disposed around a region where the IDT electrode is provided and has a larger height from the main surfaces than a height of the IDT electrode therefrom. The cover layer is disposed on the support layer and covers the IDT electrode. The pillar-shaped electrode is located on one of the main surfaces where the pillar-shaped electrode is in contact with the support layer. The pillar-shaped electrode is electrically connected to the IDT electrode. The pillar-shaped electrode includes a top surface and a side surface. Each of the top surface and the side surface includes a portion exposed to outside.

Abstract: An elastic wave device includes a piezoelectric substrate, filter electrodes, input terminal electrodes, output terminal electrodes, and ground terminal electrodes. The filter electrodes are disposed along a first direction. The ground terminal electrodes corresponding to the filter electrodes are respectively disposed between adjacent filter electrodes, and are common to the adjacent filter electrodes.

Abstract: A high-frequency module includes a longitudinally coupled surface acoustic wave filter and a low-noise amplifier that is connected to the surface acoustic wave filter. The input impedance of the surface acoustic wave filter connected to the low-noise amplifier differs from the output impedance thereof. On a Smith chart, the output impedance in the pass band of the surface acoustic wave filter is present in a region between a first output impedance and a second output impedance, the first output impedance being the output impedance of the surface acoustic wave filter where a gain of the low-noise amplifier is maximum, the second output impedance being the output impedance of the surface acoustic wave filter where a noise figure of the low-noise amplifier is minimum.

Abstract: An elastic wave device includes a piezoelectric substrate, filter electrodes, input terminal electrodes, output terminal electrodes, and ground terminal electrodes. The filter electrodes are disposed along a first direction. The ground terminal electrodes corresponding to the filter electrodes are respectively disposed between adjacent filter electrodes, and are common to the adjacent filter electrodes.

Abstract: A surface acoustic wave device includes a piezoelectric substrate, an IDT electrode, a support layer, a cover layer, and a pillar-shaped electrode. The IDT electrode is provided on a main surface of the piezoelectric substrate. The support layer is disposed around a region where the IDT electrode is provided and has a larger height from the main surfaces than a height of the IDT electrode therefrom. The cover layer is disposed on the support layer and covers the IDT electrode. The pillar-shaped electrode is located on one of the main surfaces where the pillar-shaped electrode is in contact with the support layer. The pillar-shaped electrode is electrically connected to the IDT electrode. The pillar-shaped electrode includes a top surface and a side surface. Each of the top surface and the side surface includes a portion exposed to outside.

Abstract: A high-frequency module includes a longitudinally coupled surface acoustic wave filter and a low-noise amplifier that is connected to the surface acoustic wave filter. The input impedance of the surface acoustic wave filter connected to the low-noise amplifier differs from the output impedance thereof. On a Smith chart, the output impedance in the pass band of the surface acoustic wave filter is present in a region between a first output impedance and a second output impedance, the first output impedance being the output impedance of the surface acoustic wave filter where a gain of the low-noise amplifier is maximum, the second output impedance being the output impedance of the surface acoustic wave filter where a noise figure of the low-noise amplifier is minimum.

Abstract: An acoustic wave duplexer has a satisfactory isolation characteristic between a reception acoustic wave filter chip and a transmission acoustic wave filter chip, and includes a reception surface acoustic wave filter chip and a transmission surface acoustic wave filter chip mounted on a substrate. The substrate includes first and second balanced terminals and a common terminal. At least one of the transmission surface acoustic wave filter chip and the reception surface acoustic wave filter chip is a balanced filter unit that includes, as an input terminal or an output terminal, a first balanced signal terminal and a second balanced signal terminal. The acoustic wave duplexer further includes a first interconnection arranged to connect the balanced filter unit and the first balanced terminal and a second interconnection arranged to connect the balanced filter unit and the second balanced terminal. The first and second interconnections intersect with each other while being insulated from each other.

Abstract: An acoustic wave duplexer has a satisfactory isolation characteristic between a reception acoustic wave filter chip and a transmission acoustic wave filter chip, and includes a reception surface acoustic wave filter chip and a transmission surface acoustic wave filter chip mounted on a substrate. The substrate includes first and second balanced terminals and a common terminal. At least one of the transmission surface acoustic wave filter chip and the reception surface acoustic wave filter chip is a balanced filter unit that includes, as an input terminal or an output terminal, a first balanced signal terminal and a second balanced signal terminal. The acoustic wave duplexer further includes a first interconnection arranged to connect the balanced filter unit and the first balanced terminal and a second interconnection arranged to connect the balanced filter unit and the second balanced terminal. The first and second interconnections intersect with each other while being insulated from each other.