Patents by Inventor Kentaro Harada

Kentaro Harada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20140340128
    Abstract: This disclosure relates to an organic zener diode having one electrode and one counter electrode, and an organic layer arrangement formed between the electrode and the counter electrode, wherein the organic layer arrangement includes the following organic layers: an electrically n-doped charge carrier injection layer on the electrode side, made from a mixture of an organic matrix material and an n-dopant, an electrically p-doped charge carrier injection layer on the counter electrode side, made from a mixture of another organic matrix material and a p-dopant, and an electrically undoped organic intermediate layer that is arranged between the electrically n-doped charge carrier injection layer on the electrode side and the electrically p-doped charge carrier injection layer on the counter electrode side. An electronic circuit arrangement with an organic zener diode and method for operating an organic zener diode are also provided.
    Type: Application
    Filed: July 30, 2014
    Publication date: November 20, 2014
    Inventors: Frank Lindner, Bjoern Luessem, Kentaro Harada, Karl Leo
  • Publication number: 20140166481
    Abstract: Provided is a Fe—Al alloy sputtering target having an Al content of 1 to 23 at %, an oxygen content of 100 wt ppm or less, and the balance being Fe and inevitable impurities. Also, provided is a method of producing a Fe—Al alloy sputtering target having an Al content of 1 to 23 at %, an oxygen content of 100 wt ppm or less, and the balance being Fe and inevitable impurities, the method in which: a Fe raw material and an Al raw material, i.e., 1 to 23 at % of Al and the balance being Fe and inevitable impurities, are melted at a melting temperature of 1200 to 1600° C. and an average rate of raising temperature of 300° C./hr or more (wherein, when the Al content is 15 to 23 at %, the melting is performed at a melting temperature in the range of 1400 to 1600° C. and an average rate of raising temperature of 320° C./hr or more or at a melting temperature from 1200° C. to less than 1400° C.
    Type: Application
    Filed: April 26, 2012
    Publication date: June 19, 2014
    Applicant: JX NIPPON MINING & METALS CORPORATION
    Inventor: Kentaro Harada
  • Patent number: 8703395
    Abstract: A pattern-forming method includes applying a photoresist composition to a substrate to form a resist film. The photoresist composition includes an acid generator and a first polymer that includes an acid-dissociable group. The resist film is exposed. The resist film is developed using a developer having an organic solvent content of 80 mass % or more to form a prepattern of the resist film. A polymer film having a phase separation structure in a space defined by the prepattern is formed using a composition that includes a plurality of second polymers. A part of the phase separation structure of the polymer film is removed.
    Type: Grant
    Filed: October 28, 2011
    Date of Patent: April 22, 2014
    Assignee: JSR Corporation
    Inventors: Hayato Namai, Hiroki Nakagawa, Kentaro Harada, Takehiko Naruoka
  • Publication number: 20130330146
    Abstract: In a screw installation structure in which a first member, made of an iron-based material and having a male screw-threaded portion, is fixed to a second member, made of an aluminum-based material and having a screw hole, by screw-threaded connection between the male screw-threaded portion and the screw hole, a non-circular deformed portion is partly formed on an outer periphery of a portion of the first member, exposed from the screw hole of the second member. Also provided is an anti-rotation and anti-loosening member configured to be brought into fitted-engagement with the non-circular deformed portion. The anti-rotation and anti-loosening member, in fitted-engagement with the non-circular deformed portion, is brazed onto a surface of the second member in wall contact with a contact surface of the anti-rotation and anti-loosening member, so as to prevent loosening of the first member relative to the second member.
    Type: Application
    Filed: June 5, 2013
    Publication date: December 12, 2013
    Inventors: Kentaro HARADA, Yasuaki Suzuki
  • Publication number: 20130213894
    Abstract: A cleaning method of an immersion liquid includes supplying an immersion liquid on a surface of a cleaning substrate. The immersion liquid is to be used in a liquid immersion lithography apparatus. The cleaning substrate has a substrate and an organic film laminated on a top face side of the substrate. The immersion liquid is allowed to move on the substrate to remove contaminants from the immersion liquid.
    Type: Application
    Filed: February 17, 2012
    Publication date: August 22, 2013
    Applicant: JSR Corporation
    Inventors: Kentaro HARADA, Goji Wakamatsu
  • Patent number: 8502200
    Abstract: The invention relates to an electroluminescent light-emitting device comprising an arrangement of organic layers which are applied to a substrate, and also to a method for its production. The arrangement of organic layers comprises the following layers: at least one charge carrier transport layer consisting of organic material, and at least one light-emitting layer consisting of organic material. The arrangement of organic layers furthermore comprises at least one doped fullerene layer which has a doping that increases the electrical conductivity.
    Type: Grant
    Filed: January 11, 2007
    Date of Patent: August 6, 2013
    Assignee: Novaled AG
    Inventors: Gregor Schwartz, Kentaro Harada, Karsten Walzer, Martin Pfeiffer, Karl Leo
  • Publication number: 20130107235
    Abstract: A pattern-forming method includes applying a photoresist composition to a substrate to form a resist film. The photoresist composition includes an acid generator and a first polymer that includes an acid-dissociable group. The resist film is exposed. The resist film is developed using a developer having an organic solvent content of 80 mass % or more to form a prepattern of the resist film. A polymer film having a phase separation structure in a space defined by the prepattern is formed using a composition that includes a plurality of second polymers. A part of the phase separation structure of the polymer film is removed.
    Type: Application
    Filed: October 28, 2011
    Publication date: May 2, 2013
    Applicant: JSR Corporation
    Inventors: Hayato NAMAI, Hiroki Nakagawa, Kentaro Harada, Takehiko Naruoka
  • Publication number: 20120293554
    Abstract: An image display method for displaying images in layouts having a hierarchic structure of each layout is disclosed. The each layout is geometrically similar each other. A lower layer layout is enlarged to cover and hide an upper layer layout. At least one region of the lowest layout is divided by applying the layout to generate new regions and images are displayed in the new regions. The above process is repeated more than once.
    Type: Application
    Filed: May 23, 2012
    Publication date: November 22, 2012
    Applicants: KEIO UNIVERSITY, OLYMPUS CORPORATION
    Inventors: Kentaro HARADA, Masahiko INAKAGE, Sayako SUZUKI, Maki SUGIMOTO, Makoto DANJYO, Rika MATSUI, Takashi NAOI
  • Publication number: 20120287155
    Abstract: An image display apparatus includes an image generation unit and a display unit. The image generation unit generates an image in which subject shape images shaped along the outer shapes of subjects are superimposed on a parallel image includes an array of multiple images to hide the borders or spaces between the multiple images. The display unit scrolls the image generated by the image generation unit in a direction in which the multiple images are arrayed and continuously and sequentially scroll-displays the multiple images.
    Type: Application
    Filed: May 23, 2012
    Publication date: November 15, 2012
    Applicants: KEIO UNIVERSITY, OLYMPUS CORPORATION
    Inventors: Kentaro HARADA, Masahiko INAKAGE, Rika MATSUI, Maki SUGIMOTO, Makoto DANJYO, Sayako SUZUKI, Takashi NAOI
  • Patent number: 8311336
    Abstract: A technology is disclosed for easily executing a compositional analysis to obtain a preferred composition. Image data is acquired, the image data is analyzed, and a plurality of composition lines expressing the feature of the image data on the composition are acquired. On the composition formed of the plurality of acquired composition lines, the ratio of lengths of two sides selected from the plurality of sides in the region partitioned by the plurality of composition lines is detected to be a specified value (for example, the golden ratio).
    Type: Grant
    Filed: July 15, 2009
    Date of Patent: November 13, 2012
    Assignees: Keio University, Olympus Corporation
    Inventors: Yasuhiro Sakamoto, Masahiko Inakage, Kentaro Harada
  • Patent number: 8258501
    Abstract: A method of using a metal complex as an n-dopant for doping an organic semiconducting matrix material in order to alter the latter's electrical characteristics is provided. In order to provide n-doped organic semiconductors with matrix materials having a low reduction potential, while achieving high conductivities, the n-dopant is a neutral electron-rich metal complex with a neutral or charged transition metal atom as a central atom and having at least 16 valence electrons. The complex can be polynuclear and can possess at least one metal-metal bond. At least one ligand can form a ? complex with the central atom, which can be a bridge ligand, or it can contain at least one carbanion-carbon atom or a divalent atom. Methods for providing the novel n-dopants are provided.
    Type: Grant
    Filed: March 3, 2005
    Date of Patent: September 4, 2012
    Assignee: Novaled AG
    Inventors: Ansgar Werner, Olaf Kühl, Simon Gessler, Horst Hartmann, Andre Grüssing, Michael Limmert, Andrea Lux, Kentaro Harada
  • Publication number: 20120075013
    Abstract: This disclosure relates to an organic zener diode having one electrode and one counter electrode, and an organic layer arrangement formed between the electrode and the counter electrode, wherein the organic layer arrangement includes the following organic layers: an electrically n-doped charge carrier injection layer on the electrode side, made from a mixture of an organic matrix material and an n-dopant, an electrically p-doped charge carrier injection layer on the counter electrode side, made from a mixture of another organic matrix material and a p-dopant, and an electrically undoped organic intermediate layer that is arranged between the electrically n-doped charge carrier injection layer on the electrode side and the electrically p-doped charge carrier injection layer on the counter electrode side. An electronic circuit arrangement with an organic zener diode and method for operating an organic zener diode are also provided.
    Type: Application
    Filed: March 19, 2010
    Publication date: March 29, 2012
    Applicant: NOVALED AG
    Inventors: Karl Leo, Kentaro Harada, Frank Lindner, Bjoern Luessem
  • Patent number: 8084766
    Abstract: The invention relates to an organic optoelectronic component comprising a base electrode, a top electrode that is provided with passages and an arrangement of organic layers, which is formed between the base electrode and the top electrode and makes electrical contact with said electrodes. In said component, light can be generated in a light-emitting region by the application of electrical energy to the base electrode and the top electrode. An organic current distribution layer also extends into the region containing the passages, said layer making electrical contact with the top electrode and the light-emitting region.
    Type: Grant
    Filed: January 11, 2007
    Date of Patent: December 27, 2011
    Assignee: Novaled AG
    Inventors: Ansgar Werner, Gregor Schwartz, Kentaro Harada, Karsten Walzer, Martin Pfeiffer, Karl Leo
  • Patent number: 8071976
    Abstract: The invention relates to an organic field-effect transistor, in particular an organic thin film field-effect transistor comprising a gate electrode, a drain electrode and a source electrode, a dielectric layer which is formed in contact with the gate electrode, an active layer made from an organic material which is in contact with the drain electrode and the source electrode and which is configured electrically undoped, a dopant material layer which contains a dopant material that is an electrical dopant for the organic material of the active layer, and a border surface region in which a planar contact is formed between the active layer and the dopant material layer, wherein mobility of similar electrical charge carriers, namely electrons or holes, in the dopant material layer is no more than half as great as in the active layer.
    Type: Grant
    Filed: August 3, 2009
    Date of Patent: December 6, 2011
    Assignee: Novaled AG
    Inventors: Qiang Huang, Tobias Canzler, Ulrich Denker, Ansgar Werner, Karl Leo, Kentaro Harada
  • Publication number: 20110186864
    Abstract: The invention relates to an electroluminescent light-emitting device comprising an arrangement of organic layers which are applied to a substrate, and also to a method for its production. The arrangement of organic layers comprises the following layers: at least one charge carrier transport layer consisting of organic material, and at least one light-emitting layer consisting of organic material. The arrangement of organic layers furthermore comprises at least one doped fullerene layer which has a doping that increases the electrical conductivity.
    Type: Application
    Filed: January 11, 2007
    Publication date: August 4, 2011
    Applicant: Novaled AG
    Inventors: Gregor Schwartz, Kentaro Harada, Karsten Walzer, Martin Pfeiffer, Karl Leo
  • Patent number: 7911129
    Abstract: The invention relates to an arrangement for an organic pin-type light-emitting diode with an electrode and a counter-electrode and a stack with organic layers between the electrode and the counter-electrode, where the stack with the organic layers comprises an emission layer comprising a k (k=1, 2, 3, . . . ) organic matrix materials, a doped charge carrier transport layer, which is arranged between the electrode and the emission layer, a further doped charge carrier transport layer, which is arranged between the counter-electrode and the emission layer, and one block layer, which is arranged between one of the doped charge carrier transport layers and the emission layer. The organic layers of the stack are formed by means of n (n?k+2) organic matrix materials, where the n organic matrix materials comprise the k organic matrix materials of the emission layer.
    Type: Grant
    Filed: April 12, 2006
    Date of Patent: March 22, 2011
    Assignee: Novaled AG
    Inventors: Michael Hofmann, Jan Birnstock, Jan Blochwitz-Nimoth, Ansgar Werner, Martin Pfeiffer, Kentaro Harada
  • Publication number: 20100289007
    Abstract: The invention relates to an organic optoelectronic component comprising a base electrode, a top electrode that is provided with passages and an arrangement of organic layers, which is formed between the base electrode and the top electrode and makes electrical contact with said electrodes. In said component, light can be generated in a light-emitting region by the application of electrical energy to the base electrode and the top electrode. An organic current distribution layer also extends into the region containing the passages, said layer making electrical contact with the top electrode and the light-emitting region.
    Type: Application
    Filed: January 11, 2007
    Publication date: November 18, 2010
    Inventors: Ansgar Werner, Gregor Schwartz, Kentaro Harada, Karsten Walzer, Martin Pfeiffer, Karl Leo
  • Publication number: 20100065833
    Abstract: The invention relates to an organic field-effect transistor, in particular an organic thin film field-effect transistor comprising a gate electrode, a drain electrode and a source electrode, a dielectric layer which is formed in contact with the gate electrode, an active layer made from an organic material which is in contact with the drain electrode and the source electrode and which is configured electrically undoped, a dopant material layer which contains a dopant material that is an electrical dopant for the organic material of the active layer, and a border surface region in which a planar contact is formed between the active layer and the dopant material layer, wherein mobility of similar electrical charge carriers, namely electrons or holes, in the dopant material layer is no more than half as great as in the active layer.
    Type: Application
    Filed: August 3, 2009
    Publication date: March 18, 2010
    Applicant: NOVALED AG
    Inventors: Qiang Huang, Tobias Canzler, Ulrich Denker, Ansgar Werner, Karl Leo, Kentaro Harada
  • Publication number: 20090274370
    Abstract: A technology is disclosed for easily executing a compositional analysis to obtain a preferred composition. Image data is acquired, the image data is analyzed, and a plurality of composition lines expressing the feature of the image data on the composition are acquired. On the composition formed of the plurality of acquired composition lines, the ratio of lengths of two sides selected from the plurality of sides in the region partitioned by the plurality of composition lines is detected to be a specified value (for example, the golden ratio).
    Type: Application
    Filed: July 15, 2009
    Publication date: November 5, 2009
    Applicants: KEIO UNIVERSITY, OLYMPUS CORPORATION
    Inventors: Yasuhiro Sakamoto, Masahiko Inakage, Kentaro Harada
  • Publication number: 20090212280
    Abstract: A method of using a metal complex as an n-dopant for doping an organic semiconducting matrix material in order to alter the latter's electrical characteristics is provided. In order to provide n-doped organic semiconductors with matrix materials having a low reduction potential, while achieving high conductivities, the n-dopant is a neutral electron-rich metal complex with a neutral or charged transition metal atom as a central atom and having at least 16 valence electrons. The complex can be polynuclear and can possess at least one metal-metal bond. At least one ligand can form a ? complex with the central atom, which can be a bridge ligand, or it can contain at least one carbanion-carbon atom or a divalent atom. Methods for providing the novel n-dopants are provided.
    Type: Application
    Filed: March 3, 2005
    Publication date: August 27, 2009
    Inventors: Ansgar Werner, Olaf Kühl, Simon Gessler, Horst Hartmann, Andre Grüssing, Michael Limmert, Andrea Lux, Kentaro Harada