Abstract: An inexpensive ion-exchange apparatus with an increased ion-exchange capacity has a raw-water tank (1), a treatment tank (2) and an ion exchanger (3). The raw-water tank (1) contains a to be treated liquid. The liquid contains impurity ions. The treatment tank (2) contains a treatment material that contains exchange ions exchangeable with the impurity ions. The ion exchanger (3) enables passage of the impurity ions from the raw-water tank (1) to the treatment tank (2) and the passage of the exchange ions from the treatment tank (2) to the raw-water tank (1). The treatment material in the treatment tank (2) has a higher molarity than the to be treated liquid in the raw-water tank 1.

Abstract: An ion-exchange apparatus includes a raw-water tank 1, a treatment section, an ion exchanger and a hydrophilic layer. The raw-water section contains a liquid to be treated with impurity ions. The treatment tank 2 contains a treatment material with exchange ions exchangeable with the impurity ions. The ion exchanger 3 enables the passage of the impurity ions from the raw-water tank 1 to the treatment tank 2 and the passage of the exchange ions from the treatment tank 2 to the raw-water tank 1. The hydrophilic layer M, with a water contact angle of 30° or less, is disposed on at least a surface of the ion exchanger adjacent to the treatment tank 2.

Abstract: An ion-exchange apparatus has a raw-water tank 1, a treatment tank 2, an ion exchanger 3 and a voltage applying device E. The raw-water tank 1 contains a to be treated liquid that has impurity ions. The treatment tank 2 contains a treatment material with exchange ions exchangeable with the impurity ions. The ion exchanger 3 enables the passage of the impurity ions from the raw-water tank 1 to the treatment tank 2 and the passage of the exchange ions from the treatment tank 2 to the raw-water tank 1. The voltage-applying device E applies a voltage to the ion exchanger 3.

Abstract: A fuel cell system has a cell 1, generating power, with a fuel electrode 1a, an air electrode 1b, and an electrolyte 1c. A water vapor retention member 11 is disposed on a communication path for the fuel gas supplied to the fuel electrode 1a. The retention member 11 retains water vapor, generated by the fuel electrode 1a along with power generation by using the cell 1 and mixes the water vapor with the fuel gas. The retention member 11 has a reforming catalyst that enables the hydrogen, generated by reacting the fuel gas, to be supplied. Exhaust ports 13a exhaust fuel gas toward positions on a surface of the water vapor retention member 11.

Abstract: The technology notification system includes a server which stores new technology data related to a new technology whose technical effect has been confirmed by racing a racing vehicle incorporated with the new technology in a motor racing event, and a distribution device which distributes technology notification information related to the new technology data.

Abstract: A fuel cell system has a cell (1) that is capable of generating electric power. The cell (1) has a fuel electrode (1a), an air electrode (1b) and an electrolyte (1c). The fuel electrode (1a) is supplied with hydrogen obtained by reforming fuel gas. The air electrode (1b) is supplied with oxygen in the air. The electrolyte (1c) is interposed between the fuel electrode (1a) and the air electrode (1b) to enable oxygen ions to pass through to the fuel electrode (1a). A water vapor retaining mechanism (6) is disposed in a flow path of the fuel gas supplied to the fuel electrode (1a). The mechanism (6) retains water vapor generated in the fuel electrode (1a) during electric power generation by the cell (1). The mechanism (6) enables the water vapor to be mixed with the fuel gas.

Abstract: A fuel cell system has a cell (1) that is capable of generating electric power. The cell (1) has a fuel electrode (1a), an air electrode (1b) and an electrolyte (1c). The fuel electrode (1a) is supplied with hydrogen obtained by reforming fuel gas. The air electrode (1b) is supplied with oxygen in the air. The electrolyte (1c) is interposed between the fuel electrode (1a) and the air electrode (1b) to enable oxygen ions to pass through to the fuel electrode (1a). A water vapor retaining mechanism (6) is disposed in a flow path of the fuel gas supplied to the fuel electrode (1a). The mechanism (6) retains water vapor generated in the fuel electrode (1a) during electric power generation by the cell (1). The mechanism (6) enables the water vapor to be mixed with the fuel gas.

Abstract: A semiconductor ceramic composition is represented by the formula [(Bi?—Na?)x(Ba1-yRy)1-x]TiO3 (R being at least one kind of rare earth element), in which x, y, ? and ? satisfy 0<x?0.3, 0<y?0.02, 0.46<??0.62 and 0.45???0.60, includes a molar ratio Bi/Na of Bi to Na in a sintered body of more than 1.02 but 1.20 or less. Methods for producing a semiconductor ceramic composition include weighing the molar ratio Bi/Na of Bi to Na to be 1.05 to 1.24 so an amount of Bi in a Bi raw material powder becomes larger than an amount of Na in an Na raw material powder in a (BiNa)TiO3 calcined powder or adding a Bi raw material powder to a mixed calcined powder so the molar ratio Bi/Na is 1.04 to 1.23, in order that the molar ratio Bi/Na of Bi to Na in a sintered body becomes more than 1.02 but 1.20 or less.

Abstract: Provided is a semiconductor ceramic composition that is a lead-free semiconductor ceramic composition in which a portion of Ba in a BaTiO3-based oxide is substituted by Bi and A (in which A is at least one kind of Na, Li and K), the semiconductor ceramic composition having a region between a center portion and an outer shell portion within a crystal grain, in which when Bi concentration is measured in a radial direction within the crystal grain, the Bi concentration in the region is higher than both Bi concentration in the center portion and Bi concentration in the outer shell portion.

Abstract: Provided is a semiconductor ceramic composition that is a lead-free semiconductor ceramic composition in which a portion of Ba in a BaTiO3-based oxide is substituted by Bi and A (in which A is at least one kind of Na, Li and K), the semiconductor ceramic composition having a region between a center portion and an outer shell portion within a crystal grain, in which when Bi concentration is measured in a radial direction within the crystal grain, the Bi concentration in the region is higher than both Bi concentration in the center portion and Bi concentration in the outer shell portion.

Abstract: Provided is a method for producing a lead-free, perovskite semiconductor ceramic composition which is capable of suppressing the temperature coefficient of resistance ? from becoming small, and obtaining stable characteristics. The method for producing a lead-free semiconductor ceramic composition in which a portion of Ba in a BaTiO3-based oxide is substituted by Bi and A (in which A is at least one kind of Na, Li and K), the method including: calcining a raw material for forming the semiconductor ceramic composition at 700° C. to 1,300° C.; adding an oxide containing Ba and Ti, which becomes a liquid phase at 1,300° C. to 1,450° C., to the calcined raw material; forming the same; and then sintering at a temperature of 1,300° C. to 1,450° C.

Abstract: The present invention provides a semiconductor ceramic composition which is represented by a composition formula of [(Bi.A)x(Ba1-yRy)1-x](Ti1-zMz)aO3 (in which A is at least one kind of Na, Li and K, R is at least one kind of rare earth elements (including Y), and M is at least one kind of Nb, Ta and Sb), in which a, x, y and z satisfy 0.90?a?1.10, 0<x?0.30, 0?y?0.050 and 0?z?0.010 and an average distance between voids, which is an average value of a space between voids being internally present, is 1.0 ?m or more and 8.0 ?m or less.

Abstract: To improve jump characteristic of BaTiO3—(Bi1/2Na1/2)TiO3 material. There is provided a process for producing a semiconductive porcelain composition in which a part of Ba is substituted with Bi—Na, the process including a step of preparing a (BaQ)TiO3 calcined powder (in which Q is a semiconductor dopant), a step of preparing a (BiNa)TiO3 calcined powder, a step of mixing the (BaQ)TiO3 calcined powder and the (BiNa)TiO3 calcined powder, a step of molding and sintering the mixed calcined powder, and a step of heat-treating the obtained sintered body at 600° C. or lower; and a PCT heater employing the element prepared by the above steps.

Abstract: An object is to provide a PTC element that can be made thinner, using a Pb-free semiconductor ceramic composition. The object is achieved with a PTC element including at least two metal electrodes and a BaTiO3 system semiconductor ceramic composition arranged between the electrodes, in which, in the semiconductor ceramic composition, a portion of Ba in the BaTiO3 system is substituted by Bi—Na and a semiconductorizing element, vacancies are formed on Bi sites by depleting at least a portion of Bi, and oxygen defects are formed on a crystal thereof. Since the PTCR characteristic at the inside of the semiconductor ceramic composition is negligibly weak in comparison with the PTCR characteristic at the interface between the semiconductor ceramic composition and the electrodes, the PTC element can be made thinner.

Abstract: An object is to provide a PTC element that can be made thinner, using a Pb-free semiconductor ceramic composition. The object is achieved with a PTC element including at least two metal electrodes and a BaTiO3 system semiconductor ceramic composition arranged between the electrodes, in which, in the semiconductor ceramic composition, a portion of Ba in the BaTiO3 system is substituted by Bi—Na and a semiconductorizing element, vacancies are formed on Bi sites by depleting at least a portion of Bi, and oxygen defects are formed on a crystal thereof. Since the PTCR characteristic at the inside of the semiconductor ceramic composition is negligibly weak in comparison with the PTCR characteristic at the interface between the semiconductor ceramic composition and the electrodes, the PTC element can be made thinner.

Abstract: There is provided a semiconductor ceramic composition in which a portion of Ba of BaTiO3 is substituted by Bi—Na, which exhibits an excellent jump characteristic while reducing room temperature resistivity and which also reduces room temperature resistivity and exhibits small change with time. A semiconductor ceramic composition which is represented by a composition formula of [(Bi?—Na?)x(Ba1-yRy)1-x]TiO3 (where R is at least one kind of rare earth elements), in which x, y, ? and ? satisfy 0<x?0.3, 0<y?0.02, 0.46<??0.62 and 0.45???0.60 and a molar ratio Bi/Na of Bi to Na in a sintered body is more than 1.02 but 1.20 or less, is provided. Also, a method for producing a semiconductor ceramic composition containing a means for performing weighing such a manner that the molar ratio Bi/Na of Bi to Na is 1.05 to 1.

Abstract: A semiconductive porcelain composition/electrode assembly which is low in room temperature resistivity of 100 ?·cm or less and is reduced in change with the passage of time due to energization with regard to the semiconductive porcelain composition in which a part of Ba of BaTiO3 is substituted with Bi—Na and which has a P-type semiconductive component at a crystal grain boundary. Also, there is a process for producing a semiconductive porcelain composition/electrode assembly wherein an electrode is joined to a semiconductive porcelain composition in which a part of Ba of BaTiO3 is substituted with Bi—Na and which has a P-type semiconductive component at a crystal grain boundary, the process including joining the electrode to the semiconductive porcelain composition, followed by conducting a heat treatment at a temperature of from 100° C. to 600° C. for 0.5 hour to 24 hours.

Abstract: A semiconductive porcelain composition/electrode assembly which is low in room temperature resistivity of 100 ?·cm or less and is reduced in change with the passage of time due to energization with regard to the semiconductive porcelain composition in which a part of Ba of BaTiO3 is substituted with Bi—Na and which has a P-type semiconductive component at a crystal grain boundary. Also, there is a process for producing a semiconductive porcelain composition/electrode assembly wherein an electrode is joined to a semiconductive porcelain composition in which a part of Ba of BaTiO3 is substituted with Bi—Na and which has a P-type semiconductive component at a crystal grain boundary, the process including joining the electrode to the semiconductive porcelain composition, followed by conducting a heat treatment at a temperature of from 100° C. to 600° C. for 0.5 hour to 24 hours.

Abstract: To improve jump characteristic of BaTiO3—(Bi1/2Na1/2)TiO3 material. There is provided a process for producing a semiconductive porcelain composition in which a part of Ba is substituted with Bi—Na, the process including a step of preparing a (BaQ)TiO3 calcined powder (in which Q is a semiconductor dopant), a step of preparing a (BiNa)TiO3 calcined powder, a step of mixing the (BaQ)TiO3 calcined powder and the (BiNa)TiO3 calcined powder, a step of molding and sintering the mixed calcined powder, and a step of heat-treating the obtained sintered body at 600° C. or lower; and a PCT heater employing the element prepared by the above steps.