Abstract: A lead frame has inner leads arranged in a first direction, and each inner lead includes a first main surface parallel to the first direction, an end surface connecting to the first main surface, a first side surface connecting to the first main surface and to the end surface, and a second side surface connected to the first main surface and to the first side surface. In a plan view perpendicular to the first main surface, an angle between a first imaginary straight line including a first line of intersection between the first main surface and the end surface, and a second imaginary straight line including a second line of intersection between the first main surface and the second side surface, is less than 90 degrees on a side of each inner lead.

Abstract: A lead frame includes a lead, a connection portion, and a plating film. The lead includes an upper surface and a lower surface, and a width of the upper surface is larger than a width of the lower surface. The connection portion is arranged on the upper surface and serves as a connection portion for a semiconductor element. The plating film covers a surface of the lead.

Abstract: Provided is a cognitive function-improving composition. Specifically, provided is a cognitive function-improving composition comprising at least one selected from the group consisting of a thermolysin digest of ovalbumin, a peptide comprising amino acid sequence LP, and a peptide comprising amino acid sequence LE.

Abstract: Provided is a composition for improving leptin resistance, a composition for enhancing leptin sensitivity, a composition for suppressing food intake, or a composition for anti-obesity. Specifically, provided is a composition for improving leptin resistance or enhancing leptin sensitivity, comprising a peptide comprising the amino acid sequence YAB as an active ingredient, wherein A is an amino acid residue having a basic side chain, and B is an amino acid residue having a nonpolar side chain or an amino acid residue having an acidic side chain.

Abstract: The present invention addresses the problem of providing a novel peptide which can treat, prevent or ameliorate anorexia. The present invention provides a peptide described in any one of the following items (1) to (3). (1) A peptide consisting of 4 to 9 inclusive contiguous amino acid residues in the amino acid sequence represented by SEQ ID NO: 1; (2) a peptide consisting of 4 to 12 inclusive contiguous amino acid residues in the amino acid sequence represented by SEQ ID NO: 2; and (3) a peptide consisting of an amino acid sequence having 90% or higher identity to the amino acid sequence represented by SEQ ID NO: 2.

Abstract: Provided is an oxide semiconductor including an oxide of germanium, the oxide semiconductor having a carrier density of 1.0×1018/cm3 or more. Provided is method of manufacturing an oxide semiconductor including an oxide of germanium doped on a base, the method including: atomizing or forming droplets of a raw material solution containing a dopant element and germanium, a content of the germanium being greater than a content of the dopant element; supplying a carrier gas to the atomized droplets obtained; and carrying the atomized droplets onto the base by the carrier gas, and simultaneously causing the atomized droplets to thermally react on the base.

Abstract: Ring-type lighting device of the present invention comprises: a case member having an annular shape and comprising an inner wall portion and an outer wall portion, the inner wall portion defining a hollow portion at a center, the outer wall portion defining an opening portion that has an annular shape and surrounds the hollow portion; one or more LED members provided to face an opening of the opening portion; and a cover member that has an annular shape and is provided between the opening and the LED members to close the opening portion. Such a ring-type lighting device is easy to assemble and is reduced in size while having waterproof properties.

Abstract: An oxide crystal includes an oxide having a rutile-type structure. The oxide crystal is oriented to a crystallographic axis direction perpendicular to or parallel to a c-axis, and an atomic ratio of germanium in a metal element in the oxide crystal is greater than 0.5. A crystalline oxide film contains an oxide of germanium. A crystalline multilayer structure includes a crystal substrate, and a crystalline oxide film layered on the crystal substrate. The crystal substrate has a tetragonal crystal structure, and an atomic ratio of germanium in a metal element in the crystalline oxide film is greater than 0.5. A manufacturing method includes atomizing or forming droplets of a raw material solution containing germanium, supplying a carrier gas to the atomized droplets, and carrying the atomized droplets onto a crystal substrate having a tetragonal crystal structure and simultaneously causing the atomized droplets to thermally react on the crystal substrate.

Abstract: Provided is a crystalline oxide film including an oxide of germanium, an area percentage of abnormal grains determined by surface SEM observation being 3% or less.

Abstract: A new and useful p-type oxide semiconductor with a wide band gap and an enhanced electrical conductivity and the method of manufacturing the p-type oxide semiconductor are provided. A method of manufacturing a p-type oxide semiconductor including: generating atomized droplets by atomizing a raw material solution containing at least a d-block metal in the periodic table and a metal of Group 13 of the periodic table; carrying the atomized droplets onto a surface of a base by using a carrier gas; causing a thermal reaction of the atomized droplets adjacent to the surface of the base under an atmosphere of oxygen to form the p-type oxide semiconductor on the base.

Abstract: A lead frame includes: a die pad having a mounting surface for a semiconductor element; a recess included on the mounting surface; and a lead disposed around the die pad. The recess includes: a bottom surface positioned at a depth less than a thickness of the die pad from an opening plane of the recess; a plurality of protrusions protruding from the bottom surface; and a concavity recessed from the bottom surface.

Abstract: A lead frame includes: a frame body; a plurality of leads individually projecting from the frame body; and a recess formed across one surfaces of the leads adjacent to each other with the frame body therebetween, the recess including a first recess, and a second recess partially overlapping the first recess in a bottom surface thereof and having a smaller depth than the first recess.

Abstract: A new and useful p-type oxide semiconductor with a wide band gap and an enhanced electrical conductivity and the method of manufacturing the p-type oxide semiconductor are provided. A method of manufacturing a p-type oxide semiconductor including: generating atomized droplets by atomizing a raw material solution containing at least a d-block metal in the periodic table and a metal of Group 13 of the periodic table; carrying the atomized droplets onto a surface of a base by using a carrier gas; causing a thermal reaction of the atomized droplets adjacent to the surface of the base under an atmosphere of oxygen to form the p-type oxide semiconductor on the base.

Abstract: A new and useful p-type oxide semiconductor with a wide band gap and an enhanced electrical conductivity and the method of manufacturing the p-type oxide semiconductor are provided. A method of manufacturing a p-type oxide semiconductor including: generating atomized droplets by atomizing a raw material solution containing at least a d-block metal in the periodic table and a metal of Group 13 of the periodic table; carrying the atomized droplets onto a surface of a base by using a carrier gas; causing a thermal reaction of the atomized droplets adjacent to the surface of the base under an atmosphere of oxygen to form the p-type oxide semiconductor on the base.

Abstract: A lead frame includes: a die pad having a mounting surface for a semiconductor element; a recess included on the mounting surface; and a lead disposed around the die pad. The recess includes: a bottom surface positioned at a depth less than a thickness of the die pad from an opening plane of the recess; a plurality of protrusions protruding from the bottom surface; and a concavity recessed from the bottom surface.

Abstract: An electrically-conductive member having sufficient corrosion resistivity even when the electrically-conductive member is exposed to high potential environment and a method of manufacturing the electrically-conductive member are offered. An electrically-conductive member is obtained by a mist CVD method, by forming a metal oxide film on a base member of a separator, and the electrically-conductive member has an active potential range and a passive potential range in an anode polarization curve that is measured in a sulfuric acid aqueous solution having a sulfuric acid concentration that is 5.0×10?4 mol/dm3 at pH3 and having a temperature of 25° C., an anode current density that is 1×10?7 A/cm2 or less in the passive potential range, and the passive potential range reaching to an electric potential that is 1V.