Abstract: A measuring and calculating apparatus to measure and calculate a positional displacement amount of a pattern on a surface of a target object. The apparatus includes: a measuring unit to measure a first two-dimensional intensity distribution of a first diffracted light and a second two-dimensional intensity distribution of a second diffracted light; a storage unit to store a first and a second measurement data respectively indicating the first and the second two-dimensional intensity distribution; and an arithmetic unit to execute arithmetic processing using the first and the second measurement data to acquire difference data between the first and the second measurement data, and calculate a positional displacement amount of a difference pattern between the first and second patterns in accordance with the difference data.

Abstract: A measurement apparatus which measures a relative positional displacement amount of a partial pattern to another pattern in a complex pattern on a surface of an object, includes: a measurement part to measure two-dimensional intensity distributions having a first and a second two-dimensional intensity distribution, the first distribution being formed by applying first light having a first shape to a region on which the complex pattern is measured and detecting only zero order diffraction light from the region via a first filter, and the second distribution being formed by applying second light having a second shape to the region and detecting only zero order diffraction light from the region via a second filter; a storage part to store measurement data indicating the distributions; and a calculation part to form a synthesized intensity distribution obtained by the two-dimensional intensity distributions to calculate a positional displacement amount of the partial pattern.

Abstract: A measuring and calculating apparatus to measure and calculate a positional displacement amount of a pattern on a surface of a target object. The apparatus includes: a measuring unit to measure a first two-dimensional intensity distribution of a first diffracted light and a second two-dimensional intensity distribution of a second diffracted light; a storage unit to store a first and a second measurement data respectively indicating the first and the second two-dimensional intensity distribution; and an arithmetic unit to execute arithmetic processing using the first and the second measurement data to acquire difference data between the first and the second measurement data, and calculate a positional displacement amount of a difference pattern between the first and second patterns in accordance with the difference data.

Abstract: In one embodiment, a substrate processing control apparatus includes a position information acquiring module configured to acquire information about a position of a first pattern that is formed in a substrate for a photomask to change an applied stress to the substrate or a transmittance of the substrate. The apparatus further includes a position determining module configured to determine, in accordance with the information about the position of the first pattern, a position of a second pattern to be formed in the substrate to change the applied stress to the substrate or the transmittance of the substrate.

Abstract: In one embodiment, a substrate processing control apparatus includes a position information acquiring module configured to acquire information about a position of a first pattern that is formed in a substrate for a photomask to change an applied stress to the substrate or a transmittance of the substrate. The apparatus further includes a position determining module configured to determine, in accordance with the information about the position of the first pattern, a position of a second pattern to be formed in the substrate to change the applied stress to the substrate or the transmittance of the substrate.

Abstract: According to an embodiment, a first resist pattern that includes a mark including a second pattern provided with first components and a third pattern not provided with the first components is formed. Then, a first recessed area is formed on a processing target layer using the first resist pattern. Thereafter, a second resist pattern that includes a fourth pattern is formed. The fourth pattern is formed such that the third pattern and part of the second pattern, which includes at least one row of the first components arranged along a periphery of the third pattern, are exposed. Then, a second recessed area is formed by using the second resist pattern. Thereafter, a position of the processing target layer is recognized by using a stepped portion formed at the second recessed area, in a light exposure apparatus, and a third resist pattern is formed.

Abstract: According to an embodiment, a first resist pattern that includes a mark including a second pattern provided with first components and a third pattern not provided with the first components is formed. Then, a first recessed area is formed on a processing target layer using the first resist pattern. Thereafter, a second resist pattern that includes a fourth pattern is formed. The fourth pattern is formed such that the third pattern and part of the second pattern, which includes at least one row of the first components arranged along a periphery of the third pattern, are exposed. Then, a second recessed area is formed by using the second resist pattern. Thereafter, a position of the processing target layer is recognized by using a stepped portion formed at the second recessed area, in a light exposure apparatus, and a third resist pattern is formed.

Abstract: According to one embodiment, an imprint device includes a holding unit, a mounting unit, a moving unit, a curing unit, a pressing portion, and a detecting portion. The holding unit holds template having a pattern portion pressed onto a transfer portion provided on a substrate. The mounting unit mounts the substrate. The moving unit is provided on at least either the holding unit or the mounting unit. The moving unit moves the holding unit and the mounting unit in directions approaching each other or directions away from each other. The curing unit cures the transfer portion onto which the pattern portion of the template is pressed. The pressing portion pushes the template pressed onto the transfer portion in a direction intersecting a pressing direction of the template. The detecting portion detects a position of the template pushed by the pressing portion.

Abstract: A pattern accuracy detecting apparatus includes a stage for supporting a substrate, an optical warpage detecting unit that measures a shape of a substrate disposed on the stage, an optical pattern detection unit that detects a position of a pattern on the substrate, and a processing unit that corrects the detected pattern position based on the measured shape of the substrate.

Abstract: A pattern accuracy detecting apparatus includes a stage for supporting a substrate, an optical warpage detecting unit that measures a shape of a substrate disposed on the stage, an optical pattern detection unit that detects a position of a pattern on the substrate, and a processing unit that corrects the detected pattern position based on the measured shape of the substrate.

Abstract: An imprint apparatus includes a template holder configured to hold a template that has a pattern formed thereon, the pattern to be transferred to a substrate by an imprinting process, a stage configured to hold the substrate, a liquid ejecting device configured to eject a resin precursor onto the substrate, an electric field plate configured to apply an electric field to the resin precursor on the substrate, and an electric field controller configured to apply a voltage to the electric field plate.

Abstract: According to one embodiment, there is provided a mark comprising a first mark pattern, a second mark pattern, and an opening pattern. The first mark pattern is arranged in a lower layer of a semiconductor wafer that includes a substrate, the lower layer, an intermediate layer, and an upper layer. The second mark pattern is arranged in the upper layer. The opening pattern exposes the first mark pattern.

Abstract: According to one embodiment, a substrate holding apparatus includes a main unit and a plurality of first support units. The main unit has a major surface. The main unit has a plate configuration. The first support units are disposed on the major surface. Each of the first support units includes a suction-holding unit capable of holding a substrate by suction. The suction-holding unit is movable along a first direction perpendicular to the major surface and a second direction parallel to the major surface.

Abstract: According to one embodiment, an imprint device includes a holding unit, a mounting unit, a moving unit, a curing unit, a pressing portion, and a detecting portion. The holding unit holds template having a pattern portion pressed onto a transfer portion provided on a substrate. The mounting unit mounts the substrate. The moving unit is provided on at least either the holding unit or the mounting unit. The moving unit moves the holding unit and the mounting unit in directions approaching each other or directions away from each other. The curing unit cures the transfer portion onto which the pattern portion of the template is pressed. The pressing portion pushes the template pressed onto the transfer portion in a direction intersecting a pressing direction of the template. The detecting portion detects a position of the template pushed by the pressing portion.

Abstract: An exposure apparatus according to an embodiment controls the positioning between layers using an alignment correction value calculated on the basis of lower layer position information of a lower-layer-side pattern and upper layer position information of an upper-layer-side pattern. The lower layer position information includes alignment data, a focus map, and a correction value which is set on the basis of the previous substrate. The upper layer position information includes alignment data, a focus map, and a correction value which is a correction value for the positioning and is used when the upper-layer-side pattern is transferred.

Abstract: According to one embodiment, a pattern formation method includes preparing a mold including a first pattern, preparing a substrate including a second pattern, coating a photosensitive resin onto the substrate, bringing the mold into contact with the photosensitive resin, determining whether or not the photosensitive resin is filled between the first pattern and the second pattern, performing an alignment of the first pattern and the second pattern according to a first reference in the case where the photosensitive resin is filled between the first pattern and the second pattern, and performing the alignment of the first pattern and the second pattern according to a second reference different from the first reference in the case where the photosensitive resin is not filled between the first pattern and the second pattern, curing the photosensitive resin, and releasing the mold from the photosensitive resin.

Abstract: According to one embodiment, a pattern measurement apparatus includes a scan controller, a focus controller, a stage, a sensor, a signal processor, and a measurement unit. The scan controller is configured to control a scanning direction of an electron beam. The focus controller is configured to control a focus position of the electron beam. The stage is configured to have a substrate placed on the stage, a pattern being provided in the substrate. The sensor is configured to sense secondary electrons due to the electron beam irradiated onto the pattern. The signal processor is configured to process a signal sensed by the sensor. The signal processor is configured to determine at least one of third signals from at least one of first signals and at least one of second signals. The measurement unit is configured to measure a position of the pattern from the third signals.

Abstract: According to one embodiment, an alignment measurement system is configured to measure a position of a mark having the highest identifiability of a plurality of marks formed in a substrate. The plurality of marks are made of mutually different patterns. A device pattern is formed in the substrate using directed self-assembly after the plurality of marks is formed.

Abstract: An exposure apparatus according to an embodiment controls the positioning between layers using an alignment correction value calculated on the basis of lower layer position information of a lower-layer-side pattern and upper layer position information of an upper-layer-side pattern. The lower layer position information includes alignment data, a focus map, and a correction value which is set on the basis of the previous substrate. The upper layer position information includes alignment data, a focus map, and a correction value which is a correction value for the positioning and is used when the upper-layer-side pattern is transferred.

Abstract: According to one embodiment, a substrate holding apparatus includes a main unit and a plurality of first support units. The main unit has a major surface. The main unit has a plate configuration. The first support units are disposed on the major surface. Each of the first support units includes a suction-holding unit capable of holding a substrate by suction. The suction-holding unit is movable along a first direction perpendicular to the major surface and a second direction parallel to the major surface.