Patents by Inventor Kentaro Kumaki
Kentaro Kumaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11780994Abstract: To provide a rubber composition in which wet performance, wear resistance, low rolling resistance, and breaking resistance are highly balanced. A rubber composition comprising a rubber component comprising at least three polymers and a filler, wherein the rubber component is separated into at least two polymer phases: a polymer phase (1) with the highest tan ? peak temperature; and a polymer phase (2) with the lowest peak temperature; the polymer phases (1) and (2) are incompatible with each other; the polymer phase (1) at least comprises the modified conjugated diene-based polymers (A1) and (A2), and the filler; the modified conjugated diene-based polymer (A1) has a particular weight-average molecular weight and a particular contracting factor (g?); and when a filler concentration and an average aggregate area of the filler in the polymer phase (1) are defined as X and Y, respectively, an formula (1): Y<4.8X+1200 is satisfied.Type: GrantFiled: October 4, 2019Date of Patent: October 10, 2023Assignee: BRIDGESTONE CORPORATIONInventors: Kenji Nakatani, Kentaro Kumaki
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Publication number: 20210380786Abstract: To provide a rubber composition in which wet performance, wear resistance, low rolling resistance, and breaking resistance are highly balanced. A rubber composition comprising a rubber component comprising at least three polymers and a filler, wherein the rubber component is separated into at least two polymer phases: a polymer phase (1) with the highest tan ? peak temperature; and a polymer phase (2) with the lowest peak temperature; the polymer phases (1) and (2) are incompatible with each other; the polymer phase (1) at least comprises the modified conjugated diene-based polymers (A1) and (A2), and the filler; the modified conjugated diene-based polymer (A1) has a particular weight-average molecular weight and a particular contracting factor (g?); and when a filler concentration and an average aggregate area of the filler in the polymer phase (1) are defined as X and Y, respectively, an formula (1): Y<4.8X+1200 is satisfied.Type: ApplicationFiled: October 4, 2019Publication date: December 9, 2021Applicant: BRIDGESTONE CORPORATIONInventors: Kenji NAKATANI, Kentaro KUMAKI
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Patent number: 9904172Abstract: A shrink material is provided comprising a specific polymer and a solvent containing an anti-vanishing solvent. A pattern is formed by applying a resist composition comprising a base resin and an acid generator onto a substrate to form a resist film, exposing, developing in an organic solvent developer to form a negative resist pattern, applying the shrink material onto the pattern, and removing the excessive shrink material with an organic solvent for thereby shrinking the size of holes and/or slits in the pattern.Type: GrantFiled: December 7, 2015Date of Patent: February 27, 2018Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Kentaro Kumaki, Satoshi Watanabe, Koji Hasegawa, Daisuke Domon, Kenji Yamada
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Patent number: 9632417Abstract: A shrink material is provided comprising a polymer comprising recurring units of formula (1) and a solvent containing an anti-vanishing solvent. A pattern is formed by applying a resist composition comprising a base resin and an acid generator onto a substrate to form a resist film, exposing, developing in an organic solvent developer to form a negative resist pattern, applying the shrink material onto the pattern, and removing the excessive shrink material with an organic solvent for thereby shrinking the size of holes and/or slits in the pattern.Type: GrantFiled: December 7, 2015Date of Patent: April 25, 2017Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Kentaro Kumaki, Satoshi Watanabe, Daisuke Domon, Jun Hatakeyama
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Patent number: 9551932Abstract: A resist composition comprising a polymer comprising recurring units having an acid labile group of cyclopentyl with tert-butyl or tert-amyl pendant is coated onto a substrate, baked, exposed to high-energy radiation, PEB and developed in an organic solvent to form a negative pattern. A fine hole pattern can be formed from the resist composition with advantages including high dissolution contrast, good size control and wide depth of focus.Type: GrantFiled: December 31, 2013Date of Patent: January 24, 2017Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Kenji Funatsu, Kentaro Kumaki, Akihiro Seki, Tomohiro Kobayashi, Koji Hasegawa
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Patent number: 9519213Abstract: A negative pattern is formed by coating a resist composition comprising (A) a polymer having an acid labile group, adapted to change its polarity under the action of acid, (B) a photoacid generator, and (C) an organic solvent onto a substrate, baking, exposing the resist film to high-energy radiation, PEB, and developing in an organic solvent-based developer to selectively dissolve the unexposed region of resist film. The photoacid generator has the formula: R1—COOC(CF3)2—CH2SO3?R2R3R4S+ wherein R1 is a monovalent hydrocarbon group, R2, R3 and R4 are an alkyl, alkenyl, oxoalkyl, aryl, aralkyl or aryloxoalkyl group, or may bond together to form a ring with the sulfur atom.Type: GrantFiled: February 18, 2014Date of Patent: December 13, 2016Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Tomohiro Kobayashi, Kazuhiro Katayama, Kentaro Kumaki, Chuanwen Lin, Masaki Ohashi, Masahiro Fukushima
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Publication number: 20160161851Abstract: A shrink material is provided comprising a polymer comprising recurring units of formula (1) and a solvent containing an anti-vanishing solvent. A pattern is formed by applying a resist composition comprising a base resin and an acid generator onto a substrate to form a resist film, exposing, developing in an organic solvent developer to form a negative resist pattern, applying the shrink material onto the pattern, and removing the excessive shrink material with an organic solvent for thereby shrinking the size of holes and/or slits in the pattern.Type: ApplicationFiled: December 7, 2015Publication date: June 9, 2016Applicant: Shin-Etsu Chemical Co., Ltd.Inventors: Kentaro Kumaki, Satoshi Watanabe, Daisuke Domon, Jun Hatakeyama
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Publication number: 20160161850Abstract: A shrink material is provided comprising a specific polymer and a solvent containing an anti-vanishing solvent. A pattern is formed by applying a resist composition comprising a base resin and an acid generator onto a substrate to form a resist film, exposing, developing in an organic solvent developer to form a negative resist pattern, applying the shrink material onto the pattern, and removing the excessive shrink material with an organic solvent for thereby shrinking the size of holes and/or slits in the pattern.Type: ApplicationFiled: December 7, 2015Publication date: June 9, 2016Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Kentaro Kumaki, Satoshi Watanabe, Koji Hasegawa, Daisuke Domon, Kenji Yamada
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Patent number: 9081290Abstract: A negative pattern is formed by coating a resist composition comprising a polymer comprising recurring units having a carboxyl group substituted with an acid labile group of tertiary ester and an optional acid generator onto a substrate, prebaking, exposing to high-energy radiation, baking, and developing in an organic solvent developer so that the unexposed region of resist film is dissolved away and the exposed region of resist film is not dissolved. The resist composition exhibits a high dissolution contrast during organic solvent development and forms a fine hole or trench pattern at a high sensitivity and dimensional control.Type: GrantFiled: June 17, 2013Date of Patent: July 14, 2015Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Jun Hatakeyama, Koji Hasegawa, Masayoshi Sagehashi, Kazuhiro Katayama, Kentaro Kumaki, Tomohiro Kobayashi
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Publication number: 20140255843Abstract: A negative pattern is formed by coating a resist composition comprising (A) a polymer having an acid labile group, adapted to change its polarity under the action of acid, (B) a photoacid generator, and (C) an organic solvent onto a substrate, baking, exposing the resist film to high-energy radiation, PEB, and developing in an organic solvent-based developer to selectively dissolve the unexposed region of resist film. The photoacid generator has the formula: R1—COOC(CF3)2—CH2SO3?R2R3R4S+ wherein R1 is a monovalent hydrocarbon group, R2, R3 and R4 are an alkyl, alkenyl, oxoalkyl, aryl, aralkyl or aryloxoalkyl group, or may bond together to form a ring with the sulfur atom.Type: ApplicationFiled: February 18, 2014Publication date: September 11, 2014Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Tomohiro Kobayashi, Kazuhiro Katayama, Kentaro Kumaki, Chuanwen Lin, Masaki Ohashi, Masahiro Fukushima
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Publication number: 20140212808Abstract: A resist composition comprising a polymer comprising recurring units having an acid labile group of cyclopentyl with tert-butyl or tert-amyl pendant is coated onto a substrate, baked, exposed to high-energy radiation, PEB and developed in an organic solvent to form a negative pattern. A fine hole pattern can be formed from the resist composition with advantages including high dissolution contrast, good size control and wide depth of focus.Type: ApplicationFiled: December 31, 2013Publication date: July 31, 2014Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Kenji Funatsu, Kentaro Kumaki, Akihiro Seki, Tomohiro Kobayashi, Koji Hasegawa
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Patent number: 8722321Abstract: A negative pattern is formed by applying a resist composition onto a substrate, baking, exposing to high-energy radiation, baking (PEB), and developing the exposed resist film in an organic solvent developer to selectively dissolve the unexposed region of resist film. The resist composition comprising a hydrogenated ROMP polymer comprising recurring units having an acid labile group-protected carboxyl group and recurring units having a lactone structure displays a high dissolution contrast in organic solvent development, and exhibits high dry etch resistance even when the acid labile group is deprotected through exposure and PEB.Type: GrantFiled: April 19, 2012Date of Patent: May 13, 2014Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Tomohiro Kobayashi, Takeshi Kinsho, Akihiro Seki, Kentaro Kumaki
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Publication number: 20130337383Abstract: A negative pattern is formed by coating a resist composition comprising a polymer comprising recurring units having a carboxyl group substituted with an acid labile group of tertiary ester and an optional acid generator onto a substrate, prebaking, exposing to high-energy radiation, baking, and developing in an organic solvent developer so that the unexposed region of resist film is dissolved away and the exposed region of resist film is not dissolved. The resist composition exhibits a high dissolution contrast during organic solvent development and forms a fine hole or trench pattern at a high sensitivity and dimensional control.Type: ApplicationFiled: June 17, 2013Publication date: December 19, 2013Inventors: Jun Hatakeyama, Koji Hasegawa, Masayoshi Sagehashi, Kazuhiro Katayama, Kentaro Kumaki, Tomohiro Kobayashi
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Publication number: 20120270159Abstract: A negative pattern is formed by applying a resist composition onto a substrate, baking, exposing to high-energy radiation, baking (PEB), and developing the exposed resist film in an organic solvent developer to selectively dissolve the unexposed region of resist film. The resist composition comprising a hydrogenated ROMP polymer comprising recurring units having an acid labile group-protected carboxyl group and recurring units having a lactone structure displays a high dissolution contrast in organic solvent development, and exhibits high dry etch resistance even when the acid labile group is deprotected through exposure and PEB.Type: ApplicationFiled: April 19, 2012Publication date: October 25, 2012Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Tomohiro Kobayashi, Takeshi Kinsho, Akihiro Seki, Kentaro Kumaki